• 한국재료학회지
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• 제28권4호
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• pp.208-213
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• 2018

Epitaxial ($11{\bar{2}}0$) a-plane GaN films were grown on a ($1{\bar{1}}02$) R-plane sapphire substrate with photoresist (PR) masks using metal organic chemical vapor deposition (MOCVD). The PR mask with striped patterns was prepared using an ex-situ lithography process, whereas carbonization and heat treatment of the PR mask were carried out using an in-situ MOCVD. The heat treatment of the PR mask was continuously conducted in ambient $H_2/NH_3$ mixture gas at $1140^{\circ}C$ after carbonization by the pyrolysis in ambient $H_2$ at $1100^{\circ}C$. As the time of the heat treatment progressed, the striped patterns of the carbonized PR mask shrank. The heat treatment of the carbonized PR mask facilitated epitaxial lateral overgrowth (ELO) of a-plane GaN films without carbon contamination on the R-plane sapphire substrate. Thhe surface morphology of a-plane GaN films was investigated by scanning electron microscopy and atomic force microscopy. The structural characteristics of a-plane GaN films on an R-plane sapphire substrate were evaluated by ${\omega}-2{\theta}$ high-resolution X-ray diffraction. The a-plane GaN films were characterized by X-ray photoelectron spectroscopy (XPS) to determine carbon contamination from carbonized PR masks in the GaN film bulk. After $Ar^+$ ion etching, XPS spectra indicated that carbon contamination exists only in the surface region. Finally, the heat treatment of carbonized PR masks was used to grow high-quality a-plane GaN films without carbon contamination. This approach showed the promising potential of the ELO process by using a PR mask.

• 한국안전학회지
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• 제23권3호
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• pp.30-35
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• 2008

The recent fire incident in an elementary school of Chonan city causes the media focus on the fire safety of residential container buildings. In this study, real fire tests were conducted in this kind of buildings. Combustion products including $O_2$, $CO_2$, CO, $NO_x,$, $SO_x$, HCI, HCN were measured, in order to investigate the hazard-reduction effects of employing gas mask protected with filter during the fire emergency of residential container buildings. According to the test results, whether or not employing the filter showed a sheer difference in the toxicity of the fire-induced gases, and then the importance of wearing a gas mask was evidently demonstrated.

• 한국대기환경학회:학술대회논문집
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• 한국대기환경학회 1999년도 춘계학술대회 논문집
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• pp.38-40
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• 1999

• 한국방사선학회논문지
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• 제14권3호
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• pp.313-318
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• 2020

라돈은 불활성기체로서 단원자분자이기 때문에 입자 하나의 크기가 원자 하나의 크기를 나타내며 이는 대략 반경 1~100 nm를 가지고 있다는 것을 의미한다. 따라서 마스크가 차단하는 일반적인 미세먼지, 초 미세먼지의 크기보다 작은 반경을 가지지만 일정 이상의 라돈의 흡입을 차단할 수 있다면 평소 실내착용을 통해 라돈의 흡입을 통한 피폭을 줄일 수 있을 것으로 사료된다. 이에 따라 일상생활에서 착용하는 마스크의 라돈 차단 효과를 알아보고자 한다. 각각의 마스크 별 라돈 감소율을 보면 면 마스크가 33.45%, 의료용 마스크가 33.50%, KF80 마스크가 35.12%, KF94 마스크가 37.72% 순으로 감소하였다. 면, 의료용 마스크가 KF 마스크보다 라돈 차단 효과가 다소 떨어지지만 그 차이는 크지 않아 마스크의 착용만으로도 공기 중 라돈의 유입을 일정 수준 차단할 수 있음을 알 수 있었다.

• International Journal of Precision Engineering and Manufacturing
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• 제4권1호
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• pp.23-29
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• 2003

Stencil is used normally as a mask for solder pasting on pad of a printed circuit board (PCB). The objective of this study is to develop a stencil cutting system and determine the optimal conditions to make good-quality stencil by using a Nd:YAG laser. The effects of process parameters such as laser power, type of mask, gas pressure, cutting speed and pulse duration on the cut edge quality were investigated. In order to analyze the cut surface characteristics (roughness, kerfwidth, dross) optical microscopy, SEM microscopy and roughness measurements were used. As a result, the optimal conditions of cutting process parameters were determined, and the practical feasibility of the proposed system was also examined by using a commercial Gerber file for PCB stencil manufacturing.

• 한국전기전자재료학회논문지
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• 제13권10호
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• pp.805-811
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• 2000

Reliability of PBGA(plastic ball grid array) package is weak compared with normal plastic packages. The low reliability is caused by low resistance to the popcorn cracking, which is generated by moisture absorption in PCB(prited circuit board). In this paper, plasma treatment process was used and we analyzed its effects to interface adhesion. The contents of C and Cl decrease after plasma treatment but those of O, Ca, N relatively increase. The plasma treatment improves the adhesion between EMC(epoxy molding compound) and PCB(solder mask). The grade of improvement was over 100% Max, which depends on the properties of EMC. The RMS(root mean square) roughness value of the solder mask surface increases to plasma treatment. There is little difference of adhesion in RF power and treatment time.

• 대한전자공학회논문지SD
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• 제37권7호
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• pp.1-6
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• 2000

본 연구에서는 Pt 박막을 식각하기 이하여 기존에 최적화된 가스 혼합비인 $Cl_2$(10)Ar (90)에 $N_2$ 가스를 첨가하기 실험하였다. $Cl_2$(10)/Ar(90)의 가스 혼합비에 20% $N_2$가스 첨가시, $SiO_2$ 마스크에 대한 Pt 박막의 선택비 향상으로 70$^{\circ}$ 이상의 식각 프로파일을 얻을 수 있었다. 이는 $SiO_2$ 마스크 위에 Si-N, Si-O-N과 같은 차단막 생성을 통한 결과로 확인 되어졌다. $SiO_2$ 마스크에 대한 Pt 박막의 최대 선택비와 식각률은 각각 1.71과 4125 ${\AA}$/min 이다. 이는 Pt-N, Pt-N-Cl과 같은 휘발성 화합물의 생성을 통한 결과로 판단된다.

• Journal of Magnetics
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• 제12권2호
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• pp.81-83
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• 2007

Etching of NiFe films covered with an organic photo-resist or Ti was successfully performed by an inductively coupled plasma-reactive ion etching (ICP-RIE) system using $CHF_3/O_2/NH_3$ discharges exchanging $CHF_3$ for $CH_4$ gas gradually. Experimental results showed that the organic photo-resist mask can be applied to the NiFe etching. In the case of the Ti metal mask, it was found that the etching-selectivity Ti against NiFe was significantly varied from 7.3 to ${\sim}0$ by changing $CHF_3/CH_4/O_2/NH_3$ to $CH_4/O_2/NH_3$ discharges used in the ICP-RIE system. These results show that the present RIE of NiFe was dominated by a chemical reaction rather than a physical sputtering.

• Medical Lasers
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• 제8권2호
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• pp.43-49
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• 2019

The plume produced by vaporizing tissue with a laser contains a variety of contaminants called laser-generated air pollutants (LGACs). LGACs consist of a mixture of toxic gas components, biomicroparticles, dead and living cells, and viruses. Toxic odors and thick smoke from surgical incisions and the coagulation of tissues can irritate eyes and airways, as well as cause bronchial and pulmonary congestion. Because of the potential risk of the smoke, it is advisable to appropriately remove it from the surgical site. We recommend using a smoke evacuator to remove the smoke. Suction nozzles should be placed as close as possible to the surgical site in a range of 2 cm or less. In-line filters should be used between the inlet and outlet of the surgical site. All air filtration devices should be capable of removing particles below 0.1 microns in size. The filter pack should be handled according to infection control procedures in the operating room. The laser mask can be an auxiliary protective device if it is properly worn. Some smoke inhaled under the nose wrap or over the side of the mask will not be filtered. As in electrosurgical operations, a suitable mask should be worn while smoke is present.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.285-285
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• 2011

EUVL (Extreme Ultra Violet Lithography) is one of competitive lithographic technologies for sub-30nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance since the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.