Journal of Magnetics

The Korean Magnetics Society (한국자기학회)
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Reactive Ion Etching of NiFe Film with Organic Resist Mask and Metal Mask by Inductively Coupled Plasma

  • Kanazawa, Tomomi (Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology) ;
  • Motoyama, Shin-Ichi (Samco Inc.) ;
  • Wakayama, Takayuki (Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology) ;
  • Akinaga, Hiroyuki (Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology)
  • Published : 2007.06.30
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Abstract

Etching of NiFe films covered with an organic photo-resist or Ti was successfully performed by an inductively coupled plasma-reactive ion etching (ICP-RIE) system using $CHF_3/O_2/NH_3$ discharges exchanging $CHF_3$ for $CH_4$ gas gradually. Experimental results showed that the organic photo-resist mask can be applied to the NiFe etching. In the case of the Ti metal mask, it was found that the etching-selectivity Ti against NiFe was significantly varied from 7.3 to ${\sim}0$ by changing $CHF_3/CH_4/O_2/NH_3$ to $CH_4/O_2/NH_3$ discharges used in the ICP-RIE system. These results show that the present RIE of NiFe was dominated by a chemical reaction rather than a physical sputtering.

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References

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