• Korean Journal of Materials Research
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• v.28 no.4
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• pp.208-213
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• 2018

Epitaxial ($11{\bar{2}}0$) a-plane GaN films were grown on a ($1{\bar{1}}02$) R-plane sapphire substrate with photoresist (PR) masks using metal organic chemical vapor deposition (MOCVD). The PR mask with striped patterns was prepared using an ex-situ lithography process, whereas carbonization and heat treatment of the PR mask were carried out using an in-situ MOCVD. The heat treatment of the PR mask was continuously conducted in ambient $H_2/NH_3$ mixture gas at $1140^{\circ}C$ after carbonization by the pyrolysis in ambient $H_2$ at $1100^{\circ}C$. As the time of the heat treatment progressed, the striped patterns of the carbonized PR mask shrank. The heat treatment of the carbonized PR mask facilitated epitaxial lateral overgrowth (ELO) of a-plane GaN films without carbon contamination on the R-plane sapphire substrate. Thhe surface morphology of a-plane GaN films was investigated by scanning electron microscopy and atomic force microscopy. The structural characteristics of a-plane GaN films on an R-plane sapphire substrate were evaluated by ${\omega}-2{\theta}$ high-resolution X-ray diffraction. The a-plane GaN films were characterized by X-ray photoelectron spectroscopy (XPS) to determine carbon contamination from carbonized PR masks in the GaN film bulk. After $Ar^+$ ion etching, XPS spectra indicated that carbon contamination exists only in the surface region. Finally, the heat treatment of carbonized PR masks was used to grow high-quality a-plane GaN films without carbon contamination. This approach showed the promising potential of the ELO process by using a PR mask.

• Journal of the Korean Society of Safety
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• v.23 no.3
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• pp.30-35
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• 2008

The recent fire incident in an elementary school of Chonan city causes the media focus on the fire safety of residential container buildings. In this study, real fire tests were conducted in this kind of buildings. Combustion products including $O_2$, $CO_2$, CO, $NO_x,$, $SO_x$, HCI, HCN were measured, in order to investigate the hazard-reduction effects of employing gas mask protected with filter during the fire emergency of residential container buildings. According to the test results, whether or not employing the filter showed a sheer difference in the toxicity of the fire-induced gases, and then the importance of wearing a gas mask was evidently demonstrated.

• Proceedings of the Korea Air Pollution Research Association Conference
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• 1999.04a
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• pp.38-40
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• 1999

• Journal of the Korean Society of Radiology
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• v.14 no.3
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• pp.313-318
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• 2020

Since radon is an inert gas and is a monoatomic molecule, the size of one particle represents the size of an atom, which means that it has a radius of approximately 1 to 100 nm. Therefore, if the mask has a radius smaller than the size of general fine dust and ultra fine dust, but it is possible to block the inhalation of radon more than a certain amount, it is considered that the exposure through the inhalation of radon can be reduced through normal indoor wear. Accordingly, we would like to find out the radon blocking effect of a mask worn in everyday life. Looking at the reduction rate of radon for each mask, cotton masks decreased by 33.45%, medical masks by 33.50%, KF 80 masks by 35.12%, and KF 94 masks by 37.72%. It was found that the radon blocking effect of the cotton and medical masks was somewhat inferior to that of the KF mask, but the difference was not so great that the introduction of radon into the air could be blocked to a certain level by wearing a mask.

• International Journal of Precision Engineering and Manufacturing
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• v.4 no.1
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• pp.23-29
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• 2003

Stencil is used normally as a mask for solder pasting on pad of a printed circuit board (PCB). The objective of this study is to develop a stencil cutting system and determine the optimal conditions to make good-quality stencil by using a Nd:YAG laser. The effects of process parameters such as laser power, type of mask, gas pressure, cutting speed and pulse duration on the cut edge quality were investigated. In order to analyze the cut surface characteristics (roughness, kerfwidth, dross) optical microscopy, SEM microscopy and roughness measurements were used. As a result, the optimal conditions of cutting process parameters were determined, and the practical feasibility of the proposed system was also examined by using a commercial Gerber file for PCB stencil manufacturing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.10
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• pp.805-811
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• 2000

Reliability of PBGA(plastic ball grid array) package is weak compared with normal plastic packages. The low reliability is caused by low resistance to the popcorn cracking, which is generated by moisture absorption in PCB(prited circuit board). In this paper, plasma treatment process was used and we analyzed its effects to interface adhesion. The contents of C and Cl decrease after plasma treatment but those of O, Ca, N relatively increase. The plasma treatment improves the adhesion between EMC(epoxy molding compound) and PCB(solder mask). The grade of improvement was over 100% Max, which depends on the properties of EMC. The RMS(root mean square) roughness value of the solder mask surface increases to plasma treatment. There is little difference of adhesion in RF power and treatment time.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.7
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• pp.1-6
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• 2000

In this study, the effects of the addition of $N_2$ gas into the $Cl_2$ (90)/Ar(10) gas mixture, which has been proposed as the optimized etching gas combination, for etching of platinum was performed. The selectivity of platinum film to $SiO_2$ film etch mask increased with the addition of $N_2$ gas, and etch profile over 75 $^{\circ}$ could be obtained when 20 % additive $N_2$ gas was added. These phenomena were interpreted as the results of a formation of blocking layer such as Si-N or Si-O-N on the $SiO_2$ mask. The maximum etch rate of Pt film and selectivity of Pt to $SiO_2$ are 1425 ${\AA}$/min and 1.71, respectively. These improvements were considered to be due to the formation of more volatile compounds such as Pt-N or Pt-N-Cl.

• Journal of Magnetics
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• v.12 no.2
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• pp.81-83
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• 2007

Etching of NiFe films covered with an organic photo-resist or Ti was successfully performed by an inductively coupled plasma-reactive ion etching (ICP-RIE) system using $CHF_3/O_2/NH_3$ discharges exchanging $CHF_3$ for $CH_4$ gas gradually. Experimental results showed that the organic photo-resist mask can be applied to the NiFe etching. In the case of the Ti metal mask, it was found that the etching-selectivity Ti against NiFe was significantly varied from 7.3 to ${\sim}0$ by changing $CHF_3/CH_4/O_2/NH_3$ to $CH_4/O_2/NH_3$ discharges used in the ICP-RIE system. These results show that the present RIE of NiFe was dominated by a chemical reaction rather than a physical sputtering.

• Medical Lasers
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• v.8 no.2
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• pp.43-49
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• 2019

The plume produced by vaporizing tissue with a laser contains a variety of contaminants called laser-generated air pollutants (LGACs). LGACs consist of a mixture of toxic gas components, biomicroparticles, dead and living cells, and viruses. Toxic odors and thick smoke from surgical incisions and the coagulation of tissues can irritate eyes and airways, as well as cause bronchial and pulmonary congestion. Because of the potential risk of the smoke, it is advisable to appropriately remove it from the surgical site. We recommend using a smoke evacuator to remove the smoke. Suction nozzles should be placed as close as possible to the surgical site in a range of 2 cm or less. In-line filters should be used between the inlet and outlet of the surgical site. All air filtration devices should be capable of removing particles below 0.1 microns in size. The filter pack should be handled according to infection control procedures in the operating room. The laser mask can be an auxiliary protective device if it is properly worn. Some smoke inhaled under the nose wrap or over the side of the mask will not be filtered. As in electrosurgical operations, a suitable mask should be worn while smoke is present.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.285-285
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• 2011

EUVL (Extreme Ultra Violet Lithography) is one of competitive lithographic technologies for sub-30nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance since the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.