• Journal of the Korean Institute of Landscape Architecture
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• v.33 no.4 s.111
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• pp.33-44
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• 2005

In order to reveal the geographical landscape's features of the East Sea-gateway(東海口), which has existed only in the era of Shilla as unique east path, we have carried out analysis of the old maps(邑誌圖) and satellite imagery, and geographical features analysis in the application of digital maps, and the result is as follows. 1. Analysis of materials from the Chosun dynasty describes landscapes called sea gates(海口) (note that this should not be capitalized); a place where the river meets the sea and the sea comes far into the land. Sea gate landscapes may have an island, but this is not a prerequisite. 2. According to the satellite imagery, the capital city of Shilla Dynasty had five passages. four or them are broad corridors, but one of them is narrow. The east side of the capital city is blocked by mountains and there was an important path which leads into the East Sea. 3. According to the cross section of the mountains, there is the only rule East-path. There was no alternative way. There was only one way-out to the east side from the capital city. This is the unique path which reaches a length of 28km. Judging from this, it seems that this path was called the East Sea-gateway. 4. The landscape of the East Sea-gateway was shaped like the letter 'V' and reached to the landscape of the sea gate. However, the route was blocked - part by the mountains, and also the part in the crisis of loss of path-landscape which has lost its own character of closure as several valleys are merged together.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.05a
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• pp.132-135
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• 2011

This paper describes a multi-mode LDPC decoder which supports three block lengths(648, 1296, 1944) and four code rates(1/2, 2/3, 3/4, 5/6) of IEEE 802.11n WLAN standard. To minimize hardware complexity, it adopts a block-serial (partially parallel) architecture based on the layered decoding scheme. A novel memory reduction technique devised using the min-sum decoding algorithm reduces the size of check-node memory by 47% as compared to conventional method. The designed LDPC decoder is verified by FPGA implementation, and synthesized with a $0.18-{\mu}m$ CMOS cell library. It has 219,100 gates and 45,036 bits RAM, and the estimated throughput is about 164~212 Mbps at 50 MHz@2.5v.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.2
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• pp.85-92
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• 2009

This paper proposes a full-search block-matching motion estimation circuit with hybrid architecture combining systolic arrays and adder trees for an MPEG-4 encoder. The proposed circuit uses systolic arrays for motion estimation with a small number of clock cycles and adder trees to reduce required circuit resources. The interpolation circuit for 1/2 pixel motion estimation consists of six adders, four subtracters and ten registers. We improved the circuit performance by resource sharing and efficient scheduling techniques. We described the motion estimation circuit for integer and 1/2 pixels at RTL in Verilog HDL. The logic-level circuit synthesized by using 130nm standard cell library contains 218,257 gates and can process 94 D1($720{\times}480$) image frames per second.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.4
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• pp.885-890
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• 2014

This paper has presented the change of subthreshold swings for gate oxide thickness of asymmetric double gate(DG) MOSFET, and solved Poisson equation to obtain the analytical solution of potential distribution. The Gaussian function as doping distribution is used to approch experimental results. The symmetric DGMOSFET is three terminal device. Meanwhile the asymmetric DGMOSFET is four terminal device and can separately determine the bias voltage and oxide thickness for top and bottom gates. As a result to observe the subthreshold swings for the change of top and bottom gate oxide thickness, we know the subthreshold swings are greatly changed for gate oxide thickness. Especially we know the subthreshold swings are increasing with the increase of top and bottom gate oxide thickness, and top gate oxide thickness greatly influences subthreshold swings.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.10a
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• pp.907-910
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• 2007

Recently, a container shipping volume has increased dramatically and continued on a trend of rapid growth, and so the number of container handled at the port increase. therefore, it's increasing about concern of harbor automatism to save distribution costs in harbor. harbor automatism classifies into four large automatism's, gate automatism by using RFID that trailer come with burdening the container to be loaded on ships go though with RFID and Quay-Side container crane automatism that treats cargos loading on ships and automatism of CG that loads containers from yard, and automatism of container transporters that carries containers in between gates. To increase the using efficiency of harbor, detecting exact location of yard crane is very important matter. In this paper, it intends to discuss about yard crane automatism applied UWB Ranging system and bring up the development direction.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.704-707
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• 2013

This paper has analyzed the subthreshold swings for top and bottom gate voltages of asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET is four terminal device to be able to separately bias for top and bottom gates. The subthreshold swing, therefore, has to be analyze not only for top gate voltage, but also for bottom gate voltage. In the pursuit of this purpose, Poisson equation has been solved to obtain the analytical solution of potential distribution with Gaussian function, and the subthreshold swing model has been presented. As a result to observe the subthreshold swings for the change of top and bottom gate voltage using this subthreshold swing model, we know the subthreshold swings are greatly changed for gate voltages. Especially we know the conduction path has been changed for top and bottom gate voltage and this is expected to greatly influence on subthreshold swings.

• Korean Journal of Materials Research
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• v.17 no.2
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• pp.73-80
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• 2007

For the sub-65 nm CMOS process, it is necessary to develop a new silicide material and an accompanying process that allows the silicide to maintain a low sheet resistance and to have an enhanced thermal stability, thus providing for a wider process window. In this study, we have evaluated the property and unit process compatibility of newly proposed composite silicides. We fabricated composite silicide layers on single crystal silicon from $10nm-Ni_{1-x}Co_x/single-crystalline-Si(100),\;10nm-Ni_{1-x}Co_x/poly-crystalline-\;Si(100)$ wafers (x=0.2, 0.5, and 0.8) with the purpose of mimicking the silicides on source and drain actives and gates. Both the film structures were prepared by thermal evaporation and silicidized by rapid thermal annealing (RTA) from $700^{\circ}C\;to\;1100^{\circ}C$ for 40 seconds. The sheet resistance, cross-sectional microstructure, surface composition, were investigated using a four-point probe, a field emission scanning probe microscope, a field ion beam, an X-ray diffractometer, and an Auger electron depth profi1ing spectroscopy, respectively. Finally, our newly proposed composite silicides had a stable resistance up to $1100^{\circ}C$ and maintained it below $20{\Omega}/Sg$., while the conventional NiSi was limited to $700^{\circ}C$. All our results imply that the composite silicide made from NiCo alloy films may be a possible candidate for 65 nm-CMOS devices.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.698-701
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• 2013

This paper has presented the change of subthreshold swings for gate oxide thickness of asymmetric double gate(DG) MOSFET, and solved Poisson equation to obtain the analytical solution of potential distribution. The symmetric DGMOSFET is three terminal device. Meanwhile the asymmetric DGMOSFET is four terminal device and can separately determine the bias voltage and oxide thickness for top and bottom gates. As a result to observe the subthreshold swings for the change of top and bottom gate oxide thickness, we know the subthreshold swings are greatly changed for gate oxide thickness. Especially we know the subthreshold swings are increasing with the increase of top and bottom gate oxide thickness, and top gate oxide thickness greatly influences subthreshold swings.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.6
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• pp.1422-1428
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• 2014

This paper has analyzed threshold voltage roll-off for bottom gate voltages of asymmetric double gate(DG) MOSFET. Since the asymmetric DGMOSFET is four terminal device to be able to separately bias for top and bottom gates, the bottom gate voltage influences on threshold voltage. It is, therefore, investigated how the threshold voltage roll-off known as short channel effects is reduced with bottom gate voltage. In the pursuit of this purpose, off-current model is presented in the subthreshold region, and the threshold voltage roll-off is observed for channel length and thickness with a parameter of bottom gate voltage as threshold voltage is defined by top gate voltage that off-currnt is $10^{-7}A/{\mu}m$ per channel width. As a result to observe the threshold voltage roll-off for bottom gate voltage using this model, we know the bottom gate voltage greatly influences on threshold voltage roll-off voltages, especially in the region of short channel length and thickness.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.3
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• pp.657-662
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• 2014

This paper has analyzed the subthreshold swings for top and bottom gate voltages of asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET is four terminal device to be able to separately bias for top and bottom gates. The subthreshold swing, therefore, has to be analyze not only for top gate voltage, but also for bottom gate voltage. In the pursuit of this purpose, Poisson equation has been solved to obtain the analytical solution of potential distribution with Gaussian function, and the subthreshold swing model has been presented. As a result to observe the subthreshold swings for the change of top and bottom gate voltage using this subthreshold swing model, we know the subthreshold swings are greatly changed for gate voltages. Especially we know the conduction path has been changed for top and bottom gate voltage and this is expected to greatly influence on subthreshold swings.