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http://dx.doi.org/10.6109/jkiice.2014.18.6.1422

Bottom Gate Voltage Dependent Threshold Voltage Roll-off of Asymmetric Double Gate MOSFET  

Jung, Hakkee (Department of Electronic Engineering, Kunsan National University)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.18, no.6, 2014 , pp. 1422-1428 More about this Journal
Abstract
This paper has analyzed threshold voltage roll-off for bottom gate voltages of asymmetric double gate(DG) MOSFET. Since the asymmetric DGMOSFET is four terminal device to be able to separately bias for top and bottom gates, the bottom gate voltage influences on threshold voltage. It is, therefore, investigated how the threshold voltage roll-off known as short channel effects is reduced with bottom gate voltage. In the pursuit of this purpose, off-current model is presented in the subthreshold region, and the threshold voltage roll-off is observed for channel length and thickness with a parameter of bottom gate voltage as threshold voltage is defined by top gate voltage that off-currnt is $10^{-7}A/{\mu}m$ per channel width. As a result to observe the threshold voltage roll-off for bottom gate voltage using this model, we know the bottom gate voltage greatly influences on threshold voltage roll-off voltages, especially in the region of short channel length and thickness.
Keywords
asymmetric DGMOSFET; threshold voltage roll-off; bottom gate voltage; short channel effect;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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1 P.K. Tiwari, S. Kumar, S. Mittal, V. Srivastava, U. Pandey and S. Jit, "A 2D Analytical Model of the Channel Potential and Threshold Voltage of Double-Gate(DG) MOSFETs with Vertical Gaussian Doping Profile," India, 14-16th Mar., IMPACT-2009, pp.52-55, 2009.
2 D. S.Havaldar, G. Katti, N. DasGupta and A. DasGupta, "Subthreshold Current Model of FinFETs Based on Analytical Solution of 3-D Poisson's Equation," IEEE Trans. Electron Devices, vol. 53, no.4, 2006.
3 Z.Ding, G.Hu, J.Gu, R.Liu, L.Wang and T.Tang,"An analytical model for channel potential and subthreshold swing of the symmetric and asymmetric double-gate MOSFETs," Microelectronics J., vol.42, pp.515-519, 2011.   DOI   ScienceOn
4 H.K.Jung,"Analysis for Potential Distribution of Asymmetric Double Gate MOSFET Using Series Function," J. Korea Inst. Inf. Commun. Eng., vol.17, no.11, pp.2621-2626, 2013.   DOI   ScienceOn
5 http://www.samsung.com/sec/news/presskit/3d-v-nand
6 P.Zhang, E.Jacques, R.Rogel and O.Bonnaud, "P-type and N-type multi gate polycrystalline silicon vertical thin film transistors based on low-temperature technology," Solid-State Electronics, vol.86, no.1, pp.1-5, 2013.   DOI   ScienceOn
7 G.Deng and C.Chen,"Binary Multiplication Using Hybrid MOS and Multi-gate Single-Electron Transistors," IEEE trans. on very large scale integration(VLSI) systems, vol.21, no.9, pp.1573-1582, 2013.   DOI   ScienceOn
8 A.Sengupta and C.K.Sarkar,"Surface potential based analytical modeling of double gate MOSFET with Si and Au nano-dots embedded gate dielectric for non-volatile memory applications," J. of Computational and Theoretical Nanoscience, vol.10, no.4, pp.906-913, 2013.   DOI
9 TCAD Manual, Part.4: INSPEC, ISE Integrated Systems Engineering AG, Zurich, Switzerland, 2001, p.56. ver.7.5.