• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2000년도 추계총회,초청강연,특별강연,연구발표회
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• pp.182.2-182
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• 2000

• 마이크로전자및패키징학회지
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• 제16권3호
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• pp.31-37
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• 2009

3차원 소자 집적을 위한 저온접합 공정 개발을 위해 Cu-Cu 열 압착 접합을 $300^{\circ}C$에서 30분간 실시하고 $N_2+H_2$, $N_2$분위기에서 전 후속 열처리 효과에 따른 정량적인 계면접착에너지를 4점굽힘시험법을 통해 평가하였다. 전 열처리는 100, $200^{\circ}C$의 $N_2+H_2$ 가스 분위기에서 각각 15분간 처리하였고, 계면접착에너지는 2.58, 2.41, 2.79 $J/m^2$로 전 열처리 전 후에 따른 변화가 없었다. 하지만 250, $300^{\circ}C$의 $N_2$ 분위기에서 1시간씩 후속 열처리 결과 2.79, 8.87, 12.17 $J/m^2$으로 Cu 접합부의 계면접착에너지가 3배 이상 향상된 결과를 얻을 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.304.1-304.1
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• 2016

We have investigated the effect of plasma nitridation of atomic layer deposited-Al2O3 films of monocrystalline Si wafers and the thermal properties of nitridated Al2O3 films. Nitridation was performed on Al2O3 to form aluminum oxynitride (AlON) using NH3 plasma treatment in a plasma-enhanced chemical vapor deposition and it was conducted at temperature of $400^{\circ}C$ with various plasma power condition. After nitridation, we performed firing and forming gas annealing (FGA). For each step, we have observed the minority carrier lifetime and the implied Voc by using quasi-Steady-State photoconductance (QSSPC). We confirmed a tendency to increase the minority carrier lifetime and the implied Voc after the nitridation. On the other hand, the minority carrier lifetime and the implied Voc was decreased after Firing and forming gas annealing (FGA). To get more information, we studied properties of the plasma treated Al2O3 films by using Secondary Ion Mass Spectroscopy (SIMS) and X-ray Photoelectron Spectroscopy (XPS).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.462-462
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• 2014

The effect of rear passivation for passivated emitter and rear cell (PERC) using ozone and H2O oxidant of atomic layer deposited (ALD) Al2O3 was studied by post-annealing in N2 and forming gas ambients. Rear surface of PERC solar cell was passivated by Al2O3 grown by ALD with ozone and H2O oxidant. Al2O3 grown by ALD with ozone oxidant has been known to have many advantages, such as lower interface defects, low leakage current density. Its passivation quality is better than Al2O3 with H2O. Al2O3 layer with 10 nm and 20 nm thickness was grown at $150^{\circ}C$ with ozone oxidant and at $250^{\circ}C$ with H2O oxidant. And then each samples were post-annealled at $450^{\circ}C$ in N2 ambients and at $850^{\circ}C$ in forming gas ambients. The passivation quality was investigated by measuring the minority carrier lifetime respectively. We examined atomic layer deposited Al2O3 such as growth rate, film density, thickness, negative fixed charge density at AlOx/Si interface, and reflectance. The influences of process temperature and heat treatment were investigated using Sinton (WCT-120) by Quasi-Steady State Photoconductance (QSSPC) mode. Ozone-based ALD Al2O3 film shows the best carrier lifetime at lower deposition temperature than H2O-based ALD.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.129-130
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• 2008

Polycrystalline silicon (poly-Si) Schottky barrier thin film transistors (SB-TFT) are fabricated by erbium silicided source/drain for n-type SB-TFT. High quality poly-Si film were obtained by crystallizing the amorphous Si film with excimer laser annealing (ELA) or solid phase crystallization (SPC) method. The fabricated poly-Si SB-TFTs have a large on/off current ratio with a low leakage current. Moreover, the electrical characteristics of poly-Si SB TFTs are significantly improved by the additional forming gas annealing in 2 % $H_2/N_2$, because the interface trap states at the poly-Si grain boundaries and at the gate oxide/poly-Si channel decreased.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.117-118
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• 2008

High-pressure deuterium annealing process is proposed and investigated for enhanced electrical and reliability properties of 512Mb DDR2 DRAM without increase in process complexity. High pressure deuterium annealing (HPDA) introduced during post metal anneal (PMA) improves not only DRAM performance but also reliability characteristics of MOSFET. Compared with a control sample annealed in a conventional forming gas, additional annealing in a high pressure deuterium ambient at $400^{\circ}C$ for 30 min decreased G1DL current and junction leakage. The improvements can be explained by deuterium incorporation at $SiO_2$/Si substrate interface near isolation trench edge.

• 전기전자학회논문지
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• 제22권3호
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• pp.706-711
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• 2018

본 논문에서는 플라즈마 화학기상증착 (plasma enhanced chemical vapor deposition, PECVD) 방식을 이용한 산질화규소(Silicon oxynitride, SiON) 절연체를 이용하여 4H-SiC metal-oxide-semiconductor (MOS) 소자를 제작하고 특성 분석을 수행하였다. 제작된 소자는 금속 증착 후 열처리 과정 (post metallization annealing, PMA)을 통하여 트랩 밀도가 크게 감소하는 것을 확인하였으며, 특히 $500^{\circ}C$의 forming gas 분위기에서 열처리 된 소자의 경우 매우 뛰어난 MOS 특성을 나타내었다. 본 연구를 통하여 4H-SiC MOS 구조를 위한 대체 게이트 절연체로써 PECVD SiON의 활용 가능성을 확인 할 수 있었다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권6호
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• pp.236-239
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• 2002

Si nanocrystallites thin films on P-type (100) Si substrate have been fabricated by pulsed laser deposition using a Nd:YAG laser. After deposition, samples were annealed in several environmental gases ;It the temperature range of 400 to $800^{\circ}C$ Hydrogen passivation was then performed in the forming gas (95 % $N_2$ + 5 % $H_2$) for 1 hr. Strong violet-indigo photoluminescence has been observed at room temperature on nitrogen ambient-annealed Si nanocrystallites. We report the variation of photoluminescence (PL) properties of Si thin films by changing annealing temperatures and by using hydrogen passivation. The results could suggest that the origin of violet-indigo PL should be related to the Quantum size effect of Si nanocrystallite.

• 한국전기전자재료학회논문지
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• 제22권6호
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• pp.462-465
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• 2009

Schottky barrier thin film transistors (SB-TFT) on polycrystalline silicon(poly-Si) are fabricated by platinum silicided source/drain for p-type SB-TFT. High quality poly-Si film were obtained by crystallizing the amorphous Si film with excimer laser annealing (ELA) or solid phase crystallization (SPC) method, The fabricated poly-Si SB-TFTs showed low leakage current level and a large on/off current ratio larger than 10), Significant improvement of electrical characteristics were obtained by the additional forming gas annealing in 2% $H_2/N_2$ ambient, which is attributed to the termination of dangling bond at the poly-Si grain boundaries as well as the reduction of interface trap states at gate oxide/poly-Si channel.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권9호
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• pp.423-429
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• 2002

RuOx thin films were fabricated by the method of liquid delivery MOCVD using Ru(C$_{8}$ $H_{13}$ $O_2$)$_3$ as the precursor and their thermal effects and conductivity were investigated. Ru films deposited at 25$0^{\circ}C$ were annealed at $650^{\circ}C$ for 1min with Ar, $N_2$ or N $H_3$ ambient. The changes of the micro-structure, the surface morphology and the electrical resistivity of the Ru films after annealing were studied. Ar gas was more effective than $N_2$ and N $H_3$ gases as an ambient gas for the post annealing of the Ru films, because of smaller resistivity and denser grains. The X-ray diffraction and X-ray photoelectron spectroscopy results indicate that the Ru $O_2$ phase and the silicidation are not observed regardless of the ambient gases. The minimum resistivity of the Ru film is found to have the value of 26.35 $\mu$Ω-cm in Ar ambient. Voids were formed at Ru/TiN interface of the Ru layer after annea1ing in $N_2$ ambient. The $N_2$ gas generated due to the oxidation of the TiN layer accumulated at the Ru/TiN interface, forming bubbles; consequently, the stacked film may peel off the Ru/TiN interface.e.