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Microstructural Characterization of MOCVD RuOx Thin Films and Effects of Annealing Gas Ambient  

Kim, Gyeong-Won (Dept. of Electrical Elecronic Computer Engineering, Chungbuk National University)
Kim, Nam-Su (Dept. of Electrical Elecronic Computer Engineering, Chungbuk National University)
Choe, Il-Sang (Hynix Semiconductor)
Kim, Ho-Jeong (Hynix Semiconductor)
Park, Ju-Cheol (Hynix Semiconductor)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.51, no.9, 2002 , pp. 423-429 More about this Journal
Abstract
RuOx thin films were fabricated by the method of liquid delivery MOCVD using Ru(C$_{8}$ $H_{13}$ $O_2$)$_3$ as the precursor and their thermal effects and conductivity were investigated. Ru films deposited at 25$0^{\circ}C$ were annealed at $650^{\circ}C$ for 1min with Ar, $N_2$ or N $H_3$ ambient. The changes of the micro-structure, the surface morphology and the electrical resistivity of the Ru films after annealing were studied. Ar gas was more effective than $N_2$ and N $H_3$ gases as an ambient gas for the post annealing of the Ru films, because of smaller resistivity and denser grains. The X-ray diffraction and X-ray photoelectron spectroscopy results indicate that the Ru $O_2$ phase and the silicidation are not observed regardless of the ambient gases. The minimum resistivity of the Ru film is found to have the value of 26.35 $\mu$Ω-cm in Ar ambient. Voids were formed at Ru/TiN interface of the Ru layer after annea1ing in $N_2$ ambient. The $N_2$ gas generated due to the oxidation of the TiN layer accumulated at the Ru/TiN interface, forming bubbles; consequently, the stacked film may peel off the Ru/TiN interface.e.
Keywords
Ru; liquid delivery; MOCVD; thin film; electrode;
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1 A. Tsuzumitani, Y. Okuno, J. Shibata, T. Shimizu, K. Yamamoto and Y. Mori, 'Extendibility of $Ta_2O_5$ Metal-Insulator-Metal Capacitor Using Ru Electrode', Jpn. J. Appl. Phys., vol. 39, no. 4B, pp. 2073-2077, April 2000   DOI
2 S. E. Park, H. M. Kim, K. B. Kim and S. H. Min, 'Metallorganic Chemical Vapor Deposition of Ru and $RuO_$ Using Ruthenocene Precursor and Oxygen Gas', J. Electrochem. Soc., vol. 147, no. 1, pp. 203-209, 2000   DOI   ScienceOn
3 S. Bhaskar, S. B. Majumder, P. S. Dobal, R. S. Katiyar and S. B. Krupanidhi, 'Structural and electrical characteristics of $Pb0.90La0.15TiO_3$ thin films on diffent bottom electrodes', J. Appl. Phys., Vol. 89, no. 10, pp. 5637-5643, May 2001   DOI   ScienceOn
4 T. Suzuki, Y. Nishi and M. Fujimoto, 'Effect of Nonstoichiometry on Microstructure of Epitaxially Grown $BaTiO_3$ Thin Films', Jpn. J. Appl. Phys., Vol. 39, no. 10, pp. 5970-5976, October 2000   DOI
5 S. Yamamichi, P-Y.Leasaicherre, H. Yamaguchi, K. Takemura;S. Sone, H. Yabuta, K. Sato, T. Tamura, K. Nakajima, S. Ohnishi, K. Tokashiki, Y. Hayashi, Y. Kato, Y. Miyasaka, M. Yoshida and H. One, 'An ECR MOCVD (Ba,Sr)$TiO_3$ based stacked capacitor technology with $RuO_2$/Ru/TiN/$TiSi_x$ storage nodes for Gbit-scale DRAMs', IEDM 95, pp. 119-122, 1995   DOI
6 S. Y. Kang, K. H. Choi, S. K. Lee, C. S. Hwang and H. H. Kim, 'Thermodynamic Calculations and Metallorganic Chemical Vapor Deposition of Ruthenium Thin Films Using Bis(ethyl-${\pi}$-cyclopentadienyl)Ru for Memory Applications', J. Electrochem. Soc., vol. 147, no. 3, pp. 1161-1167, 2000   DOI   ScienceOn
7 Y. C. Choi and B. S. Lee, 'Properties of Ru and $RuO_2$ Thin Films Prepared by Metalorganic Chemical Vapor Deposition', Jpn. J. Appl. Phys., vol. 38, no. 8, pp. 4876-4880, August 1999   DOI
8 K. W. Kim, N. S. Kim, Y. S. Kim, I. S. Choi, H. J. Kim and J. C. Park, 'Fabrication and Characterization of Ru Thin Films Prepared by Liquid Delivery Metal-Organic Chemical Vapor Deposition', Jpn. J. Appl. Phys., vol. 41, no. 2A, pp. 820-825, February 2002   DOI
9 S. M. Zanetti, P. R. Bueno, E. Leite, E. Longo and J. A. Varela, 'Ferroelectric and microstructural characteristics of $SrBi2Ta_2O_9$ thin films crystallized by the rapid thermal annealing process', J. Appl. Phys., vol. 89, no. 6, pp. 3416-3419, March 2001   DOI   ScienceOn
10 D. P. Vijay, S. B. Desu and W. Pan, 'Reactive Ion Etching of Lead Zirconate Titanate(PZT) Thin Film Capacitors', J. Electrochem. Soc., vol. 140, no. 9, pp. 2635-2639, September 1993   DOI
11 J. G. Lee, Y. T. Kim, S. K. Min and S. H. Choh, "Effects of excess oxygen on the properties of reactively sputtered $RuO_x$ thin films', J. Appl. Phys., vol. 77, no. 10, pp. 5473-5475, May 1995   DOI   ScienceOn
12 A. Grill, W. Kane, J. Viggiano, M. Brady and R. Laibowitz, 'Base electrodes for high dielectric constant oxide materials in silicon technology', J. Mater. Res., vol. 7, no. 12, pp. 3260-3265, December 1992   DOI
13 T. Aoyama, M. Kiyotoshi, S. Yamazaki and K. Eguchi, 'Chemical Vapor Deposition of Ru and Its Application in (Ba,Sr)$TiO_3$ Capacitors for Future Dynamic Random Access Memories', Jpn. J. Appl. Phys., vol. 38, no. 4B, pp. 2194-2199, April 1999   DOI
14 Y. Matsui, M. Hiratani and S. Kimura, 'Thermal Stability of a $RuO_2$ Electrode Prepared by DC Reactive Sputtering', Jpn. J. Appl. Phys., vol. 39, no. 1, pp. 256-263, January 2000   DOI
15 M. Hiratani, Y. Matsui, K. Imagawa and S. Kimura, 'Hydrogen Reduction Properties of $RuO_2$ Electrodes', Jpn. J. Appl. Phys., vol. 38, no. 11A, pp. L1275-L1277, November 1999   DOI   ScienceOn
16 Y. Kaga, Y. Abe, M. Kawamura and K. Sasaki, 'Thermal Stability of $RuO_2$ Thin Films and Effects of Annealing Ambient on Their Reduction Process', Jpn. J. Appl. Phys., vol. 38, no. 6A, pp. 3689-3692, June 1999   DOI
17 J. H. Ahn, W. Y. Choi, W. J. Lee, H. G. Kim, 'Annealing of $RuO_2$ and Ru Bottom Electrodes and Its Effects on the Electrical Properties of (Ba,Sr)$TiO_3$ Thin Films', Jpn. J. Appl. Phys., vol. 37, no. 1, pp. 284-289, January 1998   DOI