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http://dx.doi.org/10.4313/JKEM.2009.22.6.462

Schottky Barrier Thin Film Transistor by using Platinum-silicided Source and Drain  

Shin, Jin-Wook (광운대학교 전자재료공학과)
Chung, Hong-Bay (광운대학교 전자재료공학과)
Lee, Young-Hie (광운대학교 전자재료공학과)
Cho, Won-Ju (광운대학교 전자재료공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.22, no.6, 2009 , pp. 462-465 More about this Journal
Abstract
Schottky barrier thin film transistors (SB-TFT) on polycrystalline silicon(poly-Si) are fabricated by platinum silicided source/drain for p-type SB-TFT. High quality poly-Si film were obtained by crystallizing the amorphous Si film with excimer laser annealing (ELA) or solid phase crystallization (SPC) method, The fabricated poly-Si SB-TFTs showed low leakage current level and a large on/off current ratio larger than 10), Significant improvement of electrical characteristics were obtained by the additional forming gas annealing in 2% $H_2/N_2$ ambient, which is attributed to the termination of dangling bond at the poly-Si grain boundaries as well as the reduction of interface trap states at gate oxide/poly-Si channel.
Keywords
poly-Si schottky barrier TFT; Pt-silicide; Excimer-laser annealing; Solid phase crystallization;
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