• International Journal of Precision Engineering and Manufacturing
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• v.8 no.2
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• pp.70-74
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• 2007

This paper describes the development of a nano-positioning system for nanoscale science and engineering. Conventional positioning systems, which can be expensive and complicated, require the use of laser interferometers or capacitive transducers to measure nanoscale displacements of the stage. In this study, a new self-displacement sensing (SDS) nano-stage was developed using mechanical magnification of its displacement signal. The SDS nano-stage measured the displacement of its movement using a position-sensitive photodiode (PSPD), a laser source, and a hinge-connected rotating mirror plate. A beam from a laser diode was focused onto the middle of the plate with the rotating mirror. The position variation of the reflected beam from the mirror rotation was then monitored by the PSPD. Finally, the PSPD measured the amplified displacement as opposed to the actual movement of the stage via an optical lever mechanism, providing the ability to more precisely control the nanoscale stage. The displacement amplification process was modeled by structural analysis. The simulation results of the amplification ratio showed that the distance variation between the PSPD and the mirror plate as well as the length L of the mirror plate could be used as the basic design parameters for a SDS nano-stage. The PSPD was originally designed for a total travel range of 30 to 60 mm, and the SDS nano-stage amplified that range by a factor of 15 to 25. Based on these results, a SDS nano-stage was fabricated using principle of displacement amplification.

• Journal of Energy Engineering
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• v.25 no.1
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• pp.192-197
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• 2016

We have surveyed on technical method of fault analysis of semiconductor device. Fault analysis of semiconductor should first be found the places of fault spots. For this process they are generally used the testers; EB(emission beam tester), EM(emission microscope), OBIRCH(optical beam induced resistance change method) and LVP(laser voltage probing) etc. Therefore we have described about physical interpretation and technical method in using scanning electron microscope, transmission electron microscope, focused ion beam tester and Nano prober.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.36 no.12
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• pp.1171-1176
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• 2012

The selective patterning of a carbon nanotube (CNT) forest on a Si substrate has been performed using a femtosecond laser. The high shock wave generated by the femtosecond laser effectively removed the CNTs without damage to the Si substrate. This process has many advantages because it is performed without chemicals and can be easily applied to large-area patterning. The CNTs grown by plasma-enhanced chemical vapor deposition (PECVD) have a catalyst cap at the end of the nanotube owing to the tip-growth mode mechanism. For the application of an electron emission and biosensor probe, the catalyst cap is usually removed chemically, which damages the surface of the CNT wall. Precise control of the femtosecond laser power and focal position could solve this problem. Furthermore, selective CNT cutting using a femtosecond laser is also possible without any phase change in the CNTs, which is usually observed in the focused ion beam irradiation of CNTs.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.7-7
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• 2011

Quantum beam technology has been expected to develop breakthroughs for nanotechnology during the third basic plan of science and technology (2006~2010). Recently, Green- or Life Innovations has taken over the national interests in the fourth basic science and technology plan (2011~2015). The NIMS (National Institute for Materials Science) has been conducting the corresponding mid-term research plans, as well as other national projects, such as nano-Green project (Global Research for Environment and Energy based on Nanomaterials science). In this lecture, the research trends in Japan and NIMS are firstly reviewed, and the typical achievements are highlighted over key nanotechnology fields. As one of the key nanotechnologies, the quantum beam research in NIMS focused on synchrotron radiation, neutron beams and ion/atom beams, having complementary attributes. The facilities used are SPring-8, nuclear reactor JRR-3, pulsed neutron source J-PARC and ion-laser-combined beams as well as excited atomic beams. Materials studied are typically fuel cell materials, superconducting/magnetic/multi-ferroic materials, quasicrystals, thermoelectric materials, precipitation-hardened steels, nanoparticle-dispersed materials. Here, we introduce a few topics of neutron scattering and ion beam nanofabrication. For neutron powder diffraction, the NIMS has developed multi-purpose pattern fitting software, post RIETAN2000. An ionic conductor, doped Pr2NiO4, which is a candidate for fuel-cell material, was analyzed by neutron powder diffraction with the software developed. The nuclear-density distribution derived revealed the two-dimensional network of the diffusion paths of oxygen ions at high temperatures. Using the high sensitivity of neutron beams for light elements, hydrogen states in a precipitation-strengthened steel were successfully evaluated. The small-angle neutron scattering (SANS) demonstrated the sensitive detection of hydrogen atoms trapped at the interfaces of nano-sized NbC. This result provides evidence for hydrogen embrittlement due to trapped hydrogen at precipitates. The ion beam technology can give novel functionality on a nano-scale and is targeting applications in plasmonics, ultra-fast optical communications, high-density recording and bio-patterning. The technologies developed are an ion-and-laser combined irradiation method for spatial control of nanoparticles, and a nano-masked ion irradiation method for patterning. Furthermore, we succeeded in implanting a wide-area nanopattern using nano-masks of anodic porous alumina. The patterning of ion implantation will be further applied for controlling protein adhesivity of biopolymers. It has thus been demonstrated that the quantum beam-based nanotechnology will lead the innovations both for nano-characterization and nano-fabrication.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.1
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• pp.35-40
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• 2018

Nd:YAG laser was used to carbonize polyimide films to produce carbon films. This is a simple manufacturing process to fabricate low cost sensors. By applying this method, we studied characteristics of flexible and low-cost piezoresistive. Previously, many studies focused on carbonization of polyimide using $CO_2$ laser with wavelength of $10.6{\mu}m$. In this paper, carbonization (carbonization process) was performed on polyimide films using an Nd:YAG laser with a wavelength of $1.064{\mu}m$. In order to increase the resolution, we optimized the laser conditions of the power density ($W/cm^2$) and the beam scan rate. In previous studies using $CO_2$ laser, the minimum line width was $140{\sim}220{\mu}m$ but in this study, carbon line width was reduced to $35{\sim}40{\mu}m$. The initial sheet resistance of the carbon sensor was $100{\sim}300{\Omega}/{\square}$. The resistance decreased by 30% under stretched with a curvature radius of 21 R. The calculated gauge factor was 56.6. This work offers a simple, highly flexible, and low-cost process to fabricate piezoresistive sensors.

• Journal of the Korean Society for Precision Engineering
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• v.4 no.2
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• pp.36-46
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• 1987

An optical technique using laser for non-contact measurement of surface roughness and form accuracy of ground surfaces is presented. It is found that, when a ground surface is illuminated by a beam of laser light, the roughness height and slope distribution has significant influence on the pattern of reflection and it maintains an unique Gaussian distribution relationship with the surface roughness. The principle idea of the optical measurement system is therefore monitor the radiation, and then calibrate it in process against surface roughness by means of necessary digital data processing. On the other hand, measuring the form accuracy of a ground surface is accomplished by using a triangular method, which is based on observing the movement of an image of a spot of light projected onto the surface. The image is focused, through a series of lenses for magnification, on a photodetector array lf line configur- ation. Then the relative movement of image and consequently the form accuracy of the surface can be obtained through appropriate calibration procedures. Experimental test showed that the optical roughness measurement technique suggested in this work is very efficient for most industrial applications being capable of monitoring the roughness heights ranging 0.1 to 0.6 .$\mu$m CLA values. And form accuracy can be measured in process with a resolution of 10 .$\mu$m.

• Applied Microscopy
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• v.41 no.2
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• pp.89-98
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• 2011

Atom Probe Tomography (APT) can provide 3-dimensional information such as position and chemical composition with atomic resolution. Despite the ability of this technique, APT could not be applied for poor conductive materials such as semiconductor. Recently APT has dramatically developed by applying the laser pulsing and combining with Focused Ion Beam (FIB). The invention and combination of these techniques make possible site-specific sample preparation and permit the investigation of various materials including insulators. In this paper, we introduced the recently achieved state of the art applications of APT focusing on Si based FET devices, LED devices, low dimensional materials.

• Current Applied Physics
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• v.18 no.11
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• pp.1381-1387
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• 2018

One dimensional (1D) grating has been fabricated (using focused ion beam) on 50 nm gold (Au) film deposited on higher refractive index Gallium phosphate (GaP) substrate. The sub-wavelength periodic metal nano structuring enable to couple photon to couple with the surface plasmons (SPs) excited by them. These grating devices provide the efficient control on the SPs which propagate on the interface of noble metal and dielectric whose frequency is dependent on the bulk electron plasma frequency of the metal. For a fixed periodicity (${\Lambda}=700 nm$) and slit width (w = 100 nm) in the grating device, the efficiency of SPP excitation is about 40% compared to the transmission in the near-field. Efficient coupling of SPs with photon in dielectric provide field localisation on sub-wavelength scale which is needed in Heat Assisted Magnetic recording (HAMR) systems. The GaP is also used to emulate Vertical Cavity Surface emitting laser (VCSEL) in order to provide cheaper alternative of light source being used in HAMR technology. In order to understand the underlying physics, far-and near-field results has been compared with the modelling results which are obtained using COMSOL RF module. Apart from this, grating devices of smaller periodicity (${\Lambda}=280nm$) and slit width (w = 22 nm) has been fabricated on GaP substrate which is photoluminescence material to observe amplified spontaneous emission of the SPs at wavelength of 805 nm when the grating device was excited with 532 nm laser light. This observation is unique and can have direct application in light emitting diodes (LEDs).

• Korean Journal of Optics and Photonics
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• v.1 no.1
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• pp.46-51
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• 1990

Laser plasma was generated by a 1GW iodine photodissociation laser ($\lambda$=1.315$\mu\textrm{m}$, E=12.7J) whose output beam was focused on a molybdenum target surface. The experiment was conducted in a vacuum chamber under 1D-sTorr and several tens of laser shooting were necessary for sufficient exposure for the PBS resist of 111m thickness. Aluminium was coated on the top of the resist by 0.1$\mu\textrm{m}$ thickness which acts as an X-ray filter to cut off the visible and the ultraviolet lights. A bio-specimen was put directly on the aluminium coated resist and located at a distance of 3 cm from the X-ray source. The replicas of a steel mesh, spider's web. and a red blood cell were obtained by this technique and were observed by Nomarski microscope and SEM. The limitation of its resolution is determined by the X-ray source size and Fresnel diffraction effect, and its theoretical prediction is well matched with the experimental results. In this experiment, a resolution better than 0.1$\mu\textrm{m}$ could be obtained. ained.

• Korean Journal of Optics and Photonics
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• v.7 no.2
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• pp.129-135
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• 1996

We observed the absorptive optical bistability in the single layer amorphous $As_2S_3$ thin film which has an isolated electron pairs at roomtemperature, for the frist time, $Ar^+$ laser beam (λ=514.5 nm) was used as a light source and was focused by thin lens. The experiment was performed in cavityless system and the occurrence of optical bistability in this material could be explained by the temperature-dependent absorption coefficient of the sample. Also, this effect was explained by the reversible shift of the absorption edge in this material. The condition of optical bistability is determined by detuning value ($a_0L$) and this value was 0.12 when thikness of that sample was about 0.8 ${\mu}{\textrm}{m}$. The switching was observed clealy when light intensity is 150~180 mW and the swiching time was about $10^{-4}$ s.