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Nano Scale Compositional Analysis by Atom Probe Tomography: II. Applications on Electronic Devices and Nano Materials  

Jung, Woo-Young (Department of Material Science and Engineering, POSTECH)
Bang, Chan-Woo (Department of Material Science and Engineering, POSTECH)
Jang, Dong-Hyun (Department of Material Science and Engineering, POSTECH)
Gu, Gil-Ho (Department of Material Science and Engineering, POSTECH)
Park, Chan-Gyung (Department of Material Science and Engineering, POSTECH)
Publication Information
Applied Microscopy / v.41, no.2, 2011 , pp. 89-98 More about this Journal
Abstract
Atom Probe Tomography (APT) can provide 3-dimensional information such as position and chemical composition with atomic resolution. Despite the ability of this technique, APT could not be applied for poor conductive materials such as semiconductor. Recently APT has dramatically developed by applying the laser pulsing and combining with Focused Ion Beam (FIB). The invention and combination of these techniques make possible site-specific sample preparation and permit the investigation of various materials including insulators. In this paper, we introduced the recently achieved state of the art applications of APT focusing on Si based FET devices, LED devices, low dimensional materials.
Keywords
Atom probe tomography; Si MOSFET; InGaN Multi quantum well; Nanowire; Dopant;
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