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http://dx.doi.org/10.5855/ENERGY.2015.25.1.192

Fault Analysis of Semiconductor Device  

Park, S.J. (Korea Institute of Science and Technology Information)
Choi, S.B. (Korea Institute of Science and Technology Information)
Oh, C.S. (Korea Institute of Science and Technology Information)
Publication Information
Journal of Energy Engineering / v.25, no.1, 2016 , pp. 192-197 More about this Journal
Abstract
We have surveyed on technical method of fault analysis of semiconductor device. Fault analysis of semiconductor should first be found the places of fault spots. For this process they are generally used the testers; EB(emission beam tester), EM(emission microscope), OBIRCH(optical beam induced resistance change method) and LVP(laser voltage probing) etc. Therefore we have described about physical interpretation and technical method in using scanning electron microscope, transmission electron microscope, focused ion beam tester and Nano prober.
Keywords
semiconductor device; fault analysis of semiconductor; SEM; TEM; FIB;
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