• Korean Journal of Materials Research
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• v.20 no.10
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• pp.513-517
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• 2010

There have been many efforts to modify and improve the properties of functional thin films by hybridization with nano-sized materials. For the fabrication of electronic circuits, micro-patterning is a commonly used process. For photochemical metal-organic deposition, photoresist and dry etching are not necessary for microscale patterning. We obtained direct-patternable $SnO_2$ thin films using a photosensitive solution containing Ag nanoparticles and/or multi-wall carbon nanotubes (MWNTs). The optical transmittance of direct-patternable $SnO_2$ thin films decreased with introduction of nanomaterials due to optical absorption and optical scattering by Ag nanoparticles and MWNTs, respectively. The crystallinity of the $SnO_2$ thin films was not much affected by an incorporation of Ag nanoparticles and MWNTs. In the case of mixed incorporation with Ag nanoparticles and MWNTs, the sheet resistance of $SnO_2$ thin films decreased relative to incorporation of either single component. Valence band spectral analyses of the nano-hybridized $SnO_2$ thin films showed a relation between band structural change and electrical resistance. Direct-patterning of $SnO_2$ hybrid films with a line-width of 30 ${\mu}m$ was successfully performed without photoresist or dry etching. These results suggest that a micro-patterned system can be simply fabricated, and the electrical properties of $SnO_2$ films can be improved by incorporating Ag nanoparticles and MWNTs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.11
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• pp.841-845
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• 2013

We give a textured front on silicon wafer for high-efficiency solar cells by using micro contact printing method which uses PDMS (polydimethylsiloxane) silicon rubber as a stamp and SAM (self assembled monolayer)s as an ink. A random pyramidal texturing have been widely used for a front-surface texturing in low cost manufacturing line although the cell with random pyramids on front surface shows relatively low efficiency than the cell with inverted pyramids patterned by normal optical lithography. In the past two decades, the micro contact printing has been intensively studied in nano technology field for high resolution patterns on silicon wafer. However, this promising printing technique has surprisingly never applied so far to silicon based solar cell industry despite their simplicity of process and attractive aspects in terms of cost competitiveness. We employ a MHA (16-mercaptohexadecanoic acid) as an ink for Au deposited $SiO_2/Si$ substrate. The $SiO_2$ pattern which is same as the pattern printed by SAM ink on Au surface and later acts as a hard resist for anisotropic silicon etching was made by HF solution, and then inverted pyramidal pattern is formed after anisotropic wet etching. We compare three textured surface with different morphology (random texture, random pyramids and inverted pyramids) and then different geometry of inverted pyramid arrays in terms of reflectivity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.10
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• pp.665-669
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• 2015

We investigated and compared two methods of in-situ oxidation and chemical etching treatment (CET) to remove the boron rich layer (BRL). The BRL is generally formed during boron doping process. It has to be controlled in order not to degrade carrier lifetime and reduce electrical properties. A boron emitter is formed using $BBr_3$ liquid source at $930^{\circ}C$. After that, in-situ oxidation was followed by injecting oxygen of 1,000 sccm into the furnace during ramp down step and compared with CET using a mixture of acid solution for a short time. Then, we analyzed passivation effect by depositing $Al_2O_3$. The results gave a carrier lifetime of $110.9{\mu}s$, an open-circuit voltage ($V_{oc}$) of 635 mV at in-situ oxidation and a carrier lifetime of $188.5{\mu}s$, an $V_{oc}$ of 650 mV at CET. As a result, CET shows better properties than in-situ oxidation because of removing BRL uniformly.

• Journal of Radiation Protection and Research
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• v.13 no.2
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• pp.57-66
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• 1988

A series of experiments is performed to measure radon concentration in the near-surface soil gas at the four locations (Cheju-Si, Seoguipo-Si, Taejeong-eup, Seongsan-eup) in Cheju Island, using CR-39 detectors placed inside radon cups. Two types of radon cups are installed in shallow holes of about 15 cm in diameter and 50cm in depth. The optimum etching conditions, i.e., the concentration of NaOH solution, etchant temperature and etching time, are found to be 625N, $70^{\circ}C$ and 5.5 hours for CR-39 detectors. A typical conversion factor of radon cup is calculated as $$1track/mm^3{\cdot}30day=0.059Bq/{\ell}$$. Average radon concentrations over 30 days measured in Cheju Island from May 1, 1987 to April 23, 1988 are $3.1{\pm}0.3Bq/{\ell}$ for open radon cups and $1.7{\pm}0.2Bq/{\ell}$ for closed radon cups.

• Journal of the Korean institute of surface engineering
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• v.54 no.6
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• pp.365-370
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• 2021

In this research, we proceeded with research on plasma resistance of the cleaning process of APS(Atmospheric Plasma Spray)-Y₂O₃ coated parts used for semiconductor and display plasma process equipment. CF₄, O₂, and Ar mixed gas were used for the plasma environment, and respective alconox, surfactant, and piranha solution was used for the cleaning process. After APS-Y₂O₃ was exposed to CF₄ plasma, the surface changed from Y₂O₃ to YF₃ and a large amount of carbon was deposited. For this reason, the plasma corrosion resistance was lowered and contamination particles were generated. We performed a cleaning process to remove the defect-inducing surface YF₃ layer and carbon layer. Among three cleaning solutions, the piranha cleaning process had the highest detergency and the alconox cleaning process had the lowest detergency. Such results could be confirmed through the etching amount, morphology, composition, and accumulated contamination particle analysis results. Piranha cleaning process showed the highest detergency, but due to the very large thickness reduction, the base metal was exposed and a large number of contaminated particles were generated. In contrast, the surfactant cleaning process exhibit excellent properties in terms of surface detergency, etching amount, and accumulated contamination particle analysis.

• Clean Technology
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• v.15 no.3
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• pp.165-171
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• 2009

In this study, we found out the relation between $FeCl_3$ recovering-concentration and stage number of extraction process for invar (Fe+Ni) etching process. In order to get the desired $FeCl_3$ recovering-concentration economically, we developed the simulation program for designing the optimal $FeCl_3$ extraction process. We got the key parameter for this simulation program through pilot scale experiments. The process simulation by the developed program could reduce the emission of waste etching solution as well as the treatment costs. In addition, the developed program could calculate the number of stage of the etchant recovering system and the process time to get the desired concentration of $FeCl_3$. This program was used to compute the optimal capacity of the etchant recovering system and applied to the optimization of the stage of the etchant recovering system in real IT industry.

• Analytical Science and Technology
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• v.22 no.3
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• pp.247-253
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• 2009

Porous silicon films are electrochemically etched from crystalline silicon wafers in an aqueous solution of hydrofluoric acid(HF). Careful control of etching conditions (current density, etch time, HF concentration) provides films with precise, reproducible physical parameters (morphology, porosity and thickness). The etched pattern could be varied due to (1) current density controls pore size (2) etching time determines depth and (3) complex layered structures can be made using different current profiles (square wave, triangle, sinusoidal etc.). The optical interference spectrum from Fabry-Perot layer has been used for forensic applications, where changes in the optical reflectivity spectrum confirm the identity. We will explore a method of identifying the specific pattern code and can be used for identities of individual code with porous silicon based encoded nanosized smart particles.

• Journal of the Korean Ceramic Society
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• v.41 no.1
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• pp.13-18
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• 2004

$La_{0.5}Sr_{0.5}CoO_3$ (LSCO) electrodes were prepared on ferroelectric $Sr_{0.9}Bi_{2.1}Ta_2O_9$(SBT) thin films by spin coating method using photosensitive sol-gel solution. Self-patterning technique of photosensitive sol-gel solution has advantages such as simple manufacturing process compared to photoresist/dry etching process. Lanthanum(III) 2-methoxyethoxide, Stronitium diethoxide. Cobalu(II)2-methoxyethoxide were used as starting materials for LSCO electrode. UV irradiation on LSCO thin films lead to decrease solubility by M-O-M bond formation and the solubility difference allows us to obtain self-patternine. There was little composition change of the LSCO thin films between before leaching and after leaching in 2-methoxyethanol. The lowest resistivity of LSCO thin films deposited on $SiO_2$/Si substrate was $1.1{\times}10^{-2}{\Omega}cm$ when the thin film was ennealed at $740^{\circ}C$. The values of Pr/Ps and 2Pr of LSCO/SBT/Pt capacitor on the applied voltage of 5V were 0.51, 8.89 ${\mu}C/cm^2$, respectively.

• Korean Chemical Engineering Research
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• v.48 no.2
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• pp.157-163
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• 2010

A new etchant formulation was developed in this study to increase the shadow mask production rate, utilizing the $Fe(ClO_4)_3$ as an additive in the aqueous $FeCl_3$ solution. The shadow mask etch rate increased substantially with the increase of $Fe(ClO_4)_3$ concentration in the etchant. The etch rate difference between Ni and Invar steel was also reduced with the addition of $Fe{(ClO_4)_3}$ for most of the operating conditions, which was caused by the enhanced etch rate of both Ni and Fe by the new etchant. The increase in etch rate with the addition of $Fe(ClO_4)_3$ to aqueous ferric chloride solution was attributed to the superior electron transfer capability of $ClO^{4-}$ ion to that of $Cl^-$ ion.

• Membrane Journal
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• v.32 no.3
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• pp.198-208
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• 2022

Membrane can selectively separate various substances such as organic substances, liquids, solutes, vapors, gases, ions or electrons according to the separation technology and various uses. Membranes are largely divided into symmetric membranes and asymmetric membranes, and classified into porous and nonporous structure depending on the presence or absence of pores. Also, the interface of the membrane may be molecularly uniform, or chemically or physically non-uniform. Preparation techniques include melt extrusion, stretching, template leaching, track-etching, solution casting, phase inversion, and solution coating method. The prepared membrane can be applied to various applications such as microfiltration, ultrafiltration, nanofiltration, reverse osmosis, gas separation and energy fields. This review provides a tutorial on how to prepare membranes according to the classification and types.