• 한국전기전자재료학회논문지
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• 제21권2호
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• pp.111-117
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• 2008

We have studied surface roughness, contamination of impurity, bonding with some gas element, reflectance and zeta potential on masks to be generated or changed during photolithography/dry or wet etching process. Mask surface roughness was not changed after photolithography/dry etching process. But surface roughness was changed on some area under MoSi film of Cr/MoSi/Qz. There was not detected any impurity on mask surface after plasma dry etching process. Reflectance of mask was increased after variable plasma etching treatment, especially when mask was treated with plasma including $O_2$ gas. Blank mask was positively charged when the mask was treated with Cr plasma etching gas($Cl_2:250$ sccm/He:20 $sccm/O_2:29$ seem, source power:100 W/bias power:20 W, 300 sec). But this positive charge was changed to negative charge when the mask was treated with $CF_4$ gas for MoSi plasma etching, resulting better wet cleaning. There was appeared with negative charge on MoSi/Qz mask treated with Cr plasma etching process condition, and this mask was measured with more negative after SC-1 wet cleaning process, resulting better wet cleaning. This mask was charged with positive after treatment with $O_2$ plasma again, resulting bad wet cleaning condition.

• Transactions on Electrical and Electronic Materials
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• 제16권6호
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• pp.312-316
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• 2015

Through silicon via (TSV) technology holds the promise of chip-to-chip or chip-to-package interconnections for higher performance with reduced signal delay and power consumption. It includes high aspect ratio silicon etching, insulation liner deposition, and seamless metal filling. The desired etch profile should be straightforward, but high aspect ratio silicon etching is still a challenge. In this paper, we investigate the use of etch hard mask for finer TSVs etching to have clear definition of etched via pattern. Conventionally employed photoresist methods were initially evaluated as reference processes, and oxide and metal hard mask were investigated. We admit that pure metal mask is rarely employed in industry, but the etch result of metal mask support why hard mask are more realistic for finer TSV etching than conventional photoresist and oxide mask.

• 한국전기전자재료학회논문지
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• 제23권5호
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• pp.353-357
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• 2010

Recently, silicon etching have received much attention for display industry, nano imprint technology, silicon photonics, and MEMS application. After the etching process, removing of etch mask and residue of sidewall is very important. The investigation of the etched mask removing was carried out by using the ashing, HF dipping and acid cleaning process. Experiment shows that oxygen component of reactive gas and photoresist react with silicon and converting them into the mask fence. It is very difficult to remove by using ashing or acid cleaning process because mask fence consisted of Si and O compounds. However, dilute HF dipping is very effective process for SiOx layer removing. Finally, we found optimized condition for etched mask removing.

• 반도체디스플레이기술학회지
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• 제16권4호
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• pp.16-19
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• 2017

For the economical and environmental-friendly fabrication of polisher, Mo mask layer were sputtered on glass substrate instead of Cr mask material. Mo mask layers were sputtered by pulsed-DC sputtering and Photoresist patterns were formed on Mo mask layer for different develop times and optimized. After Mo mask layer were patterned and exposed glass was wet etched by HF solution for different etching times, the remaining Mo mask was stripped by using Al etchant. Develop time of 30 sec and HF wet etching time of 3 min were selected as optimized process condition and applied to the fabrication of polisher.

• Journal of Magnetics
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• 제12권2호
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• pp.81-83
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• 2007

Etching of NiFe films covered with an organic photo-resist or Ti was successfully performed by an inductively coupled plasma-reactive ion etching (ICP-RIE) system using $CHF_3/O_2/NH_3$ discharges exchanging $CHF_3$ for $CH_4$ gas gradually. Experimental results showed that the organic photo-resist mask can be applied to the NiFe etching. In the case of the Ti metal mask, it was found that the etching-selectivity Ti against NiFe was significantly varied from 7.3 to ${\sim}0$ by changing $CHF_3/CH_4/O_2/NH_3$ to $CH_4/O_2/NH_3$ discharges used in the ICP-RIE system. These results show that the present RIE of NiFe was dominated by a chemical reaction rather than a physical sputtering.

• 한국정보전자통신기술학회논문지
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• 제14권4호
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• pp.323-327
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• 2021

본 논문은 OLED에 사용되는 SUS MASK를 자동액관리 시스템을 사용하여 제작 하였다. SUS MASK의 홀 직경은 0.4 mm으로 설정하여 실험 하였다. 첨가제 F300이 홀 직경이 0.4 mm에 근접하고 오차범위는 평균 0.08로 측정되어 우수함을 알 수 있었다. 그리고 산화환원전위(ORP) 변화에 따른 CuCl2와 FeCl3의 무게 감소량을 측정결과, FeCl3이 ORP 변화에 상대적으로 민감도가 높은 것으로 나타났다. SUS Mask를 연속적으로 에칭하면서 ORP(610 mV)와 비중(1.463)이 자동으로 조절되는지를 실험를 하였다. 실험결과로서는 셋팅 값이 크게 변화되지 않아 자동액관리 시스템이 잘 조절이 잘 되는 것으로 나타났다. 그리고 홀 직경을 0.4 mm로 목표치로 설정한 후 실험 한 결과는 0.36부터 0.44까지 측정되었다. 따라서 SUS MASK 제조공정에서 에칭가공공정은 제작된 자동액관리 시스템을 적용시키면 보다 안정성 높은 정밀도로 향상 시킬 수 있을 것으로 기대된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.74-74
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• 2009

The ArF PR mask was. developed to overcome the limit. of sub 40nm patterning technology with KrF PR. But ArF PR difficult to meet the required PR selectivity by thin PR thickness. So need to the multi-stack mask such as amorphous carbon layer (ACL). Generally capacitively coupled plasma (CCP) etcher difficult to make the high density plasma and inductively coupled plasma (ICP) type etcher is more suitable for multi stack mask etching. Hybrid Coupled Plasma source (HCPs) etcher using the 13.56MHz RF power for ICP source and 2MHz and 27.12MHz for bias power was adopted to improve the process capability and controllability of ion density and energy independently. In the study, the oxide trench which has the multi stack layer process was investigated with the HCPs etcher (iGeminus-600 model DMS Corporation). The results were analyzed by scanning electron microscope (SEM) and it was found that etching characteristic of oxide trench profile depend on the multi-stack mask.

• 한국정보전자통신기술학회논문지
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• 제15권4호
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• pp.243-248
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• 2022

본 논문은 SUS MASK을 FeCl3에 첨가제 (F300)를 첨가하여 에칭하는 것이 목적이다. 실험에 사용된 장비는 자체 제작된 자동 액 관리 시스템이다. 자동 액 관리 시스템은 비중(S.G)과 산화환원전위 (ORP)를 실시간으로 제어하고 FeCl3 및 첨가제를 정량 공급할 수 있는 장치이다. SUS MASK를 10장 단위로 200장까지 1분 동안 에칭하였다. 초기 SUS MASK가 10장 일 때 ORP 값이 628 mV로 시작하여 40장 투입할 때부터 611 mV로 측정되어 200장까지 610 mV에 가깝게 유지되는 것을 확인하였다. 또한 비중은 1.640 근처에서 유지되었다. 그리고 SUS MASK가 50장 이후부터 200장까지 0.4 mm에 근접하게 측정되었다. 실험은 ORP는 610 mV, 비중은 1.463, 에칭 압력은 3.0 kg/cm2, 첨가제 (F300) 비율은 1.2%로 하였고 한번 에칭할 때 10장씩 200장까지 하여 홀 크기를 측정하였다. 그 결과, 20장부터 직경이 0.4 mm에 근접하였다. SUS MASK 매수가 늘어나도 ORP 및 비중 조절이 잘 되었고 실험 목표치인 0.4 mm에 근접된 것을 확인하였다.

• Transactions on Electrical and Electronic Materials
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• 제16권4호
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• pp.169-172
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• 2015

Although, there are several research studies on the engineering of the graphene layers using different etching techniques, there is not any comprehensive study on the effects of using different etching masks in the reactive ion etching (RIE) method on the quality and uniformity of the etched graphene films. This study investigated the effects of using polystyrene and conventional photolithography resist as a etching mask on the engineering of the number of graphene layers, using RIE. The effects were studied using Raman spectroscopy. This analysis indicated that the photo-resist mask is better than the polystyrene mask because of its lower post processing effects on the graphene surface during the RIE process. A single layer graphene was achieved from a bi-layer graphene after 3 s of the RIE process using oxygen plasma, and the bi-layer graphene was successfully etched after 6 s of the RIE process. The bilayer etching time was significantly smaller than reported values for graphene flakes in previous research.

• 마이크로전자및패키징학회지
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• 제6권3호
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• pp.65-71
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• 1999

광 패키징에서 광섬유와 광전자소자를 정확히 정렬하기 위한 V-groove의 치수 정밀도에 미치는 마스크 재료와 에칭용액의 영향을 연구하였다. PECVD nitride, LPCVD nitride, thermal oxide($SiO_2$)를 마스크재료로 사용하였고 실리콘을 이방성에칭하는 용액으로 KOH(40wt%)용액과 KOH(40wt%)용액에 IPA를 첨가한 용액을 이용하였다. 마스크재료로는 LPCVD nitride가 가장 좋은 선택적에칭특성을 나타내었으며 사용된 마스크재료 중 thermal oxide가 가장 빠른 속도로 에칭되었다. V-groove의 크기 증가는 마스크충 아래로의 undercutting에 의해 생겼는데 이는 주로 (111)면으로의 에칭 때문이었다. KOH(40wt%)용액에서 (111)면의 에칭속도는 0.034 - 0.037 $\mu\textrm{m}$/min로 마스크재료에 관계없이 거의 일정하였다. IPA를 KOH(40wt%)용액에 첨가하면 (100)면과 (111)면의 에칭속도는 모두 감소하지만 (111)면에 대한 (100)면의 에칭속도비는 증가하였다. 그러므로 이런 용액에서 (111)면으로의 에칭에 의한 undercutting현상은 줄어들었으며 V-groove의 크기를 더 정확하게 조절할 수 있었다.