1 |
M. D. Henry and S. Walavalkar, Nanotechnology, 20, 4 (2009). [DOI: http://dx.doi.org/10.1088/0957-4484/20/25/255305]
DOI
|
2 |
S. Ramaswami, IEEE TDMR., 9, 524 (2009). [DOI: http://dx.doi.org/10.1109/TDMR.2009.2034317].
DOI
|
3 |
D. Zhang, S. Rauf, and T. Sparks, IEEE TPS, 30, 114 (2002). [DOI: http://dx.doi.org/10.1109/TPS.2002.1003950]
DOI
|
4 |
T. Hamed, J. Abdolhosien, R. R. Mohammad, M. S. Meisam, and H. Navid, Chemical Engineering Journal, 226, 384 (2013). [DOI: http://dx.doi.org/10.1016/j.cej.2013.04.035]
DOI
|
5 |
S. Kang, B. D. Vogt, W. L. Wu, V. M. Prabhu, D. L. VanderHart, A. Rao, and E. K. Lin, Macromolecules, 40, 1497 (2007). [DOI: http://dx. doi.org/10.1021/ma062579c]
DOI
|
6 |
R. A. Gottscho, C. W. Jurgensen, and D. J. Vitkavage, J. Vac. Sci. Technol. B, 10, 2133 (1992). [DOI: http://dx.doi.org/10.1116/1.586180]
DOI
|
7 |
R. Nagarajan, K. Prasad, L. Ebin, and B. Narayanan, Sens. Actuators A, 139, 323 (2007). [DOI: http://dx.doi.org/10.1016/j.sna.2007.01.014]
DOI
|
8 |
J. H. Min, G. R. Lee, J. K. Lee, C. K. Kim, and S. H. Moon, J. Vac. Sci. Technol. B, 22, 893 (2004). [DOI: http://dx.doi.org/10.1116/1.1695338]
DOI
|
9 |
P. Sigmund, Journal of Materials Science, 8, 1545 (1973). [DOI: http://dx.doi.org/10.1007/BF00754888]
DOI
|
10 |
J. C. Arnold and H. H. Sawinl, J. Appl. Phys., 70, 5314 (1991). [DOI: http://dx.doi.org/10.1063/1.350241]
DOI
|
11 |
B. Abraham-Shrauner, C. D. Wang, J. Electrochem. Soc., 143, 2, 672 (1996). [DOI: http://dx.doi.org/10.1149/1.1836498]
DOI
|
12 |
K. P. Giapis, G. R. Scheller, R. A. Gottscho, W. S. Hobson, and Y. H. Lee, J. Appl. Phys., 57, 983 (1990). [DOI: http://dx.doi.org/10.1063/1.103532]
DOI
|
13 |
R. Beica, DTIP. MEMS/MOEMS 2008 Symposium on, 127 (2008). [DOI: http://dx.doi.org/10.1109/DTIP.2008.47 52967]
|
14 |
M. J. Wang, C. Y. Hung, C. L. Kao, and P. N. Lee, IEEE ECTC, 62, 284 (2012). [DOI: http://dx.doi.org/10.1109/ECTC.2012.6248842]
DOI
|
15 |
P. Dixit and J. Miao, J. Electrochem. Soc., 155, H85 (2008). [DOI: http://dx.doi.org/10.1149/1.2814081]
DOI
|
16 |
E. S. G. Shaqfeh and C. W. Jurgensen, J. Appl Phys., 66, 4664 (1989). [DOI: http://dx.doi.org/10.1063/1.343823]
DOI
|
17 |
R. Abdolvand and F. Ayazi, Sensors and Actuators A, 144, 109 (2008) [DOI: http://dx.doi.org/10.1016/j.sna.2007.12.026]
DOI
|
18 |
B. Wu, A. Kumar, and S. Pamarthy, J. Appl. Phys., 108, 051101 (2010). [DOI: http://dx.doi.org/10.1063/1.3474652]
DOI
|
19 |
S. Jensen and O. Hansen, Proc. SPIE, 5342 (Micromachining and Microfabrication Process Technology IX), 111 (2004). [DOI: http://dx.doi.org/10.1117/12.524461]
DOI
|
20 |
V. S. Rao, EPTC, 11, 431 (2009). [DOI: http://dx.doi.org/10.1109/EPTC.2009.5416509]
DOI
|
21 |
Y. C. Hsin, C. C. Chen, J. H. Lau, P. J. Tzeng, S. H. Shen, Y. F. Hsu, S. C. Chen, C. Y. Wn, J. C. Chen, T. K. Ku, and M. J. Kao, IEEE ECTC, 61, 1130 (2011). [DOI: http://dx.doi.org/10.1109/ECTC.2011.5898652]
DOI
|
22 |
W. L. Nicoll, IEEE TSM, 26, 500 (2013). [DOI: http://dx. doi.org/10.1109/TSM.2013.2283230]
DOI
|
23 |
I. W. Rangelow, J. Vac. Sci. Technol. A, 21, 1550 (2003). [DOI:http://dx.doi.org/10.1116/1.1580488]
DOI
|
24 |
A. D. Bailey III and R. A. Gottscho, Jpn. J. Appl. Phys., 34, 2083 (1995). [DOI: http://dx.doi.org/10.1143/JJAP.34.2083]
DOI
|
25 |
L. Sainiemi and S. Franssila, J. Vac. Sci. Technol. B, 25, 801 (2007). [DOI: http://dx.doi.org/10.1116/1.2734157]
DOI
|
26 |
J. W. Choi, J. Micromech Microeng., 23, 7 (2013). [DOI: http://dx.doi.org/10.1088/0960-1317/23/6/065005]
DOI
|
27 |
P. Dixit and J. Miao, J. Phys. Conf. Ser., 34, 577 (2006). [DOI: http://dx.doi.org/10.1088/1742-6596/34/1/095]
DOI
|
28 |
G. E. Flores, W. W. Flack, and E. Tai, Proc. SPIE2195, Advances in Resist Technology and Processing XI, 734 (1994). [DOI: http://dx.doi.org/10.1117/12.175386]
DOI
|
29 |
F. H. Dill, W. P. Hornberger, Hauge, S. Peter, Shaw, M. Jane, IEEE T-ED, 22, 445 (1975). [DOI: http://dx.doi.org/10.1109/T-ED.1975.18159]
DOI
|