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http://dx.doi.org/10.4313/JKEM.2010.23.5.353

Removal of Photoresist Mask after the Cl2/HBr/CF4 Reactive Ion Silicon Etching  

Ha, Tae-Kyung (School of Electrical and Electronics Engineering, Chung-Ang University)
Woo, Jong-Chang (School of Electrical and Electronics Engineering, Chung-Ang University)
Kim, Gwan-Ha (School of Electrical and Electronics Engineering, Chung-Ang University)
Kim, Chang-Il (School of Electrical and Electronics Engineering, Chung-Ang University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.23, no.5, 2010 , pp. 353-357 More about this Journal
Abstract
Recently, silicon etching have received much attention for display industry, nano imprint technology, silicon photonics, and MEMS application. After the etching process, removing of etch mask and residue of sidewall is very important. The investigation of the etched mask removing was carried out by using the ashing, HF dipping and acid cleaning process. Experiment shows that oxygen component of reactive gas and photoresist react with silicon and converting them into the mask fence. It is very difficult to remove by using ashing or acid cleaning process because mask fence consisted of Si and O compounds. However, dilute HF dipping is very effective process for SiOx layer removing. Finally, we found optimized condition for etched mask removing.
Keywords
Silicon etching; Photoresist mask removing; Reactive ion etching; Plasma etching; HF cleaning;
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