• Journal of Magnetics
• /
• 제22권1호
• /
• pp.100-103
• /
• 2017

We studied the microstructure and magnetic properties of Fe nanosized powder synthesized by the pulsed wire evaporation method. The x-ray diffraction spectrum confirmed that this powder had a pure ${\alpha}$-Fe phase. Scanning electron microscope and transmission electron microscope measurements indicated that the prepared powder had uniform spherical shape with core-shell structure. The mean powder size was about 35 nm and the thickness of the surface passivation layer was about 5 nm. Energy dispersive X-ray spectroscopy measurement indicated that the surface passivation layer was iron oxide. Magnetic field dependent magnetization measurement at room temperature showed that the maximum magnetization of the prepared powder was 177.1 emu/g at 1 T.

• 천문학회지
• /
• 제36권spc1호
• /
• pp.109-115
• /
• 2003

We report the results of the ionospheric measurement obtained from the instruments on board the Korea Multi-Purpose Satellite - 1 (KOMPSAT-l). We observed a deep electron density trough in the nighttime equatorial ionosphere during the great magnetic storm on 15 July 2000. We attribute the phenomena to the up-lifted F-layer caused by the enhanced eastward electric field, while the spacecraft passed underneath the layer. We also present the results of our statistical study on the equatorial plasma bubble formation. We confirm the previous results regarding its seasonal and longitudinal dependence. In addition, we obtain new statistical results of the bubble temperature variations. The whole data set of measurement for more than a year is compared with the International Reference Ionosphere (IRI). It is seen that the features of the electron density and temperature along the magnetic equator are more prominent in the KOMPSAT-l observations than in the IRI model.

• Journal of Magnetics
• /
• 제18권2호
• /
• pp.173-177
• /
• 2013

Cantilever-detected high-frequency electron spin resonance (ESR) is a powerful method of sub-terahertz and terahertz ESR spectroscopy for a tiny magnetic sample at low temperature. In this technique, a small magnetization change associated with ESR transition is detected as deflection of a sample-mounted cantilever. So far, we have succeeded in ESR detection at 370 GHz using a commercial piezoresistive microcantilever. The spin sensitivity was estimated to ${\sim}10^{12}$ spins/gauss. In order to further increase the sensitivity, we adopt a fiber-optic-based detection system using a Fabry-Perot interferometer in place of piezoresistive system. Fabry-Perot cavity is formed between an optical-fiber end and microcantilever surface, and a change in the interference signal, corresponding to the cantilever deflection, is sensitively detected. This system is suitable for low-temperature and high-magnetic-field experiments because of its compact setup and less heat dissipation. In this study, performance of Fabry-Perot interferometer is evaluated, and its application to cantilever-detected ESR measurement is described.

• 한국전기전자재료학회논문지
• /
• 제13권5호
• /
• pp.365-370
• /
• 2000

Schottky contacts on n-In$\_$0.53//Ga$\_$0.47//As have been made by metal deposition on substrates cooled to a temperature of 77K. The current-voltage and capacitance-voltage characteristics showed that the Schottky diodes formed at low temperature had a much improved barrier height compared to those formed at room temperature. The Schottky barrier height ø$\_$B/ was found to be increased from 0.2eV to 0.6eV with Ag metal. The saturation current density of the low temperature diode was about 4 orders smaller than for the room temperature diode. A current transport mechanism dominated by thermionic emission over the barrier for the low temperature diode was found from current-voltage-temperature measurement. Deep level transient spectroscopy studies exhibited a bulk electron trap at E$\_$c/-0.23eV. The low temperature process appears to reduce metal induced surface damage and may form an MIS (metal-insulator-semiconductor)-like structure at the interface.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
• /
• pp.74-77
• /
• 2004

[ $HfO_2$ ] dielectric layers were grown on the p-type Si(100) substrate by metalorganic molecular beam epitaxy(MOMBE). Hafnium $t-butoxide[Hf(O{\cdot}t-C_4H_9)_4]$ was used as a Hf precursor and Argon gas was used as a carrier gas. The thickness of the layers was measured by scanning electron microscopy (SEM) and high-resolution transmission electron measurement(HR-TEM). The properties of the $HfO_2$ layers were evaluated by X-ray diffraction(XRD), high frequency capacitance-voltage measurement(HF C-V), current-voltage measurement(I-V), and atomic force measurement(AFM). HF C-V measurements have shown that $HfO_2$ layer grown by MOMBE has a high dielectric constant(k=19-21). The properties of $HfO_2$ films are affected by various process variables such as substrate temperature, bubbler temperature, Ar, and $O_2$ gas flows. In this paper, we examined the relationship between the $O_2/Ar$ gas ratio and the electrical properties of $HfO_2$.

• 한국전기전자재료학회논문지
• /
• 제24권5호
• /
• pp.364-369
• /
• 2011

Analyzing electrical degradation of polycrystalline silicon transistor to applicable at several environment is very important issue. In this research, after fabricating p channel poly crystalline silicon TFT (thin film transistor) electrical characteristics were compare and analized that changed by gate bias with first measurement. As a result on and off current was reduced by variation of gate bias and especially re duce ratio of off current was reduced by $7.1{\times}10^1$. On/off current ratio, threshold voltage and electron mobility increased. Also, when channel length gets shorter on/off current ratio was increased more and thresh old voltage increased less. It was cause due to electron trap and de-trap to gate silicon oxide by variation of gate bias.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
• /
• pp.748-751
• /
• 2003

The electron temperature and plasma density in coplanar alternating-current plasma display panels (AC-PDPs) have been experimentally investigated by a micro Langmuir probe and the high speed discharge images in this experiment.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1989년도 추계학술대회 논문집 학회본부
• /
• pp.145-148
• /
• 1989

Plasma diagnostics using Langmuir Probe is of wide application because of its simplicity in measurement of electron temperatures and densities. Current methods using simple circuit and analog meters, however, have troubles when they are applied to time-varying or thermal plasmas. To overcome these problems and expand the area of applicability, we have designed fast electronic voltage sweeping circuit in which we can detect digital data. Diagnostics using our digital Langmuir Probe is performed in various kinds of plasmas and the results are shown. Our method can be applied to measuring electron temperature and density of high temperature or time-varying plasmas. And we expect further knowledge of each state of plasma.

• 반도체디스플레이기술학회지
• /
• 제15권4호
• /
• pp.33-35
• /
• 2016

In this study, a new plasma source was used in the ALD process. Line type plasma sources were analyzed by electric and magnetic field simulation. And the results were compared with plasma density and electron temperature measurement results. As a result, the results of the computer simulation and the diagnosis results of plasma density and electron temperature showed similar tendency. At this time, the plasma uniformity is 95.6 %. $Al_2O_3$ thin film was coated on 6 inch Si-wafer, using this plasma source. The uniformity of the thin film was more than 98% and the thin film growth rate was 0.13 nm/cycle.

• Journal of Electrical Engineering and Technology
• /
• 제7권6호
• /
• pp.983-989
• /
• 2012

The purpose of this paper is to decide the optimum synthesis conditions of polycrystalline diamond films according to the ratio of gas mixture. Diamond films were deposited with cyclo-hexane as a carbon precursor by the microwave plasma enhanced chemical vapor deposition process. The optimum oxygen ratio to cyclo-hexane was reached about 125 % under the fixed 0.3% c-hexane in hydrogen. Oxygen plays a role in etching the graphitic components of carbon sp2 bond effectively. By OES measurement, the best synthesis conditions found out about 12.5 % and 15.75 %, which is the emission intensity ratios of CH(B-X) and $H{\beta}$ on $H{\alpha}$, respectively. Also, the electron temperature was similar about 5,000 to 5,200 K in this work.