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Study of ALD Process using the Line Type Plasma Source  

Kwon, Gi Chung (Kwangwoon Univ. Electrophysics)
Jo, Tae Hoon (Kwangwoon Univ. Electrophysics)
Choi, Jin Woo (Kwangwoon Univ. Electrophysics)
Song, Sae Yung (NainTech)
Seol, Jae Yoon (NainTech)
Lee, Jun Sin (Sungkyunkwan Univ. College of information & Communication engineering)
Publication Information
Journal of the Semiconductor & Display Technology / v.15, no.4, 2016 , pp. 33-35 More about this Journal
Abstract
In this study, a new plasma source was used in the ALD process. Line type plasma sources were analyzed by electric and magnetic field simulation. And the results were compared with plasma density and electron temperature measurement results. As a result, the results of the computer simulation and the diagnosis results of plasma density and electron temperature showed similar tendency. At this time, the plasma uniformity is 95.6 %. $Al_2O_3$ thin film was coated on 6 inch Si-wafer, using this plasma source. The uniformity of the thin film was more than 98% and the thin film growth rate was 0.13 nm/cycle.
Keywords
ALD; Simulation; Deposition; Line plasma source; Wise probe;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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