• Journal of the Microelectronics and Packaging Society
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• v.15 no.4
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• pp.65-70
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• 2008

The mechanical shear strength of BGA(Ball Grid Array) solder joints under high impact loading was investigated. The Sn-37Pb solder balls with a diameter of $500{\mu}m$ were placed on the pads of FR-4 substrates with ENIG(Electroless Nickel Immersion Gold) surface treatment and reflowed. For the High Temperature Storage(HTS) test, the samples were aged a constant testing temperature of $120^{\circ}C$ for up to 250h. After the HTS test, high speed shear tests with various shear speed of 0.01, 0.1, 1, 3 m/s were conducted. $Ni_3Sn_4$ intermetallic compound(IMC) layer was observed at the solder/Ni-P interface and thickness of IMC was increased with aging process. The shear strength increased with increasing shear speed. The fracture surfaces of solder joints showed various fracture modes dependent on shear speed and aging time. Fracture mode was changed from ductile fracture to brittle fracture with increasing shear speed.

• Applied Microscopy
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• v.36 no.3
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• pp.227-234
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• 2006

To investigate the comparative effect of spherical and aspherical RGP lens were worn during 3 weeks on rabbit's cornea. Four white rabbits were worn right eyes with spherical lens and 4 white rabbits were worn right eyes with aspherical RGP lens. Left eyes were served as control. The rabbits were sacrificed at 3 weeks after fitting and observed morphological changes by scanning electron microscopy and also investigate proliferation rate of the corneal epithelium with RGP wearing. After spherical RGP lens wearing, the epithet layer damaged compared to aspherical lens. The superficial cell layer strip off seriously, cell size significantly changed abnormal. Both spherical and aspherical RGP lens fitting group showed so many bacteria and back surface of lens was found like a fern shape. The aspherical RGP lens original material type was some formal than spherical lens. We thought that these pattern was significantly altered with spherical lens by prohibited transmitter oxygen from atmosphere therefore the epithelium shape was changed. This suggested wearing the aspherical lens might be less physiologic than shperical lens fitting.

• Polymer(Korea)
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• v.25 no.4
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• pp.558-567
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• 2001

The syntheses of thermal latent catalysts have been carried out by modifying the substituent of pyrazinium salts. The thermal latent properties and cure behaviors of difunctional epoxy resin (diglycidylether of bisphenol-A, DGEBA) with 1 wt% of catalyst as an initiator were investigated by dynamic DSC method. As a result, the synthesized catalysts showed the good latent thermal properties in epoxy system. With increasing the basicity of substituted catalyst, the cure temperature and activation energy of epoxy system were increased, whereas the activity was decreased. This was probably due to the fact that the activity and cure behavior were controlled by ring strain and basicity of substituent. Consequently, the catalyst activity modified by methyl group as an electron donor was decreased in increasing of basicity in an initiation step of epoxy cure system. This is due to a decreasing of stabilities of both leaving group of pyrazinium salts and benzyl cation. However, the catalyst activity modified by cyano group as an electron acceptor was increased in increasing the stability of benzyl cation resulting from organic effects and resonance.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.155.2-155.2
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• 2013

Strain-relaxed SiGe layer on Si substrate has numerous potential applications for electronic and opto- electronic devices. SiGe layer must have a high degree of strain relaxation and a low dislocation density. Conventionally, strain-relaxed SiGe on Si has been manufactured using compositionally graded buffers, in which very thick SiGe buffers of several micrometers are grown on a Si substrate with Ge composition increasing from the Si substrate to the surface. In this study, a new plasma process, i.e., the combination of PIII&D and HiPIMS, was adopted to implant Ge ions into Si wafer for direct formation of SiGe layer on Si substrate. Due to the high peak power density applied the Ge sputtering target during HiPIMS operation, a large fraction of sputtered Ge atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed Ge plasma, the ion implantation of Ge ions can be successfully accomplished. The PIII&D system for Ge ion implantation on Si (100) substrate was equipped with 3'-magnetron sputtering guns with Ge and Si target, which were operated with a HiPIMS pulsed-DC power supply. The sample stage with Si substrate was pulse-biased using a separate hard-tube pulser. During the implantation operation, HiPIMS pulse and substrate's negative bias pulse were synchronized at the same frequency of 50 Hz. The pulse voltage applied to the Ge sputtering target was -1200 V and the pulse width was 80 usec. While operating the Ge sputtering gun in HiPIMS mode, a pulse bias of -50 kV was applied to the Si substrate. The pulse width was 50 usec with a 30 usec delay time with respect to the HiPIMS pulse. Ge ion implantation process was performed for 30 min. to achieve approximately 20 % of Ge concentration in Si substrate. Right after Ge ion implantation, ~50 nm thick Si capping layer was deposited to prevent oxidation during subsequent RTA process at $1000^{\circ}C$ in N2 environment. The Ge-implanted Si samples were analyzed using Auger electron spectroscopy, High-resolution X-ray diffractometer, Raman spectroscopy, and Transmission electron microscopy to investigate the depth distribution, the degree of strain relaxation, and the crystalline structure, respectively. The analysis results showed that a strain-relaxed SiGe layer of ~100 nm thickness could be effectively formed on Si substrate by direct Ge ion implantation using the newly-developed PIII&D process for non-gaseous elements.

• Applied Chemistry for Engineering
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• v.21 no.6
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• pp.638-642
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• 2010

After phthalonitrile derivatives were synthesized by the introduction of phenoxy, 2-naphthoxy or 4-trityl phenoxy group on ${\alpha}$- and ${\beta}$-position, oxovanadyl phthalocyanine (VOPc) derivatives containing electron-rich substituent group at different position were synthesized successfully in this investigation. The chemical structure of samples was determined by the means of $^1H$-NMR, MALDI-TOF mass spectroscopy, and FT-IR spectrometer. Also, optical and chemical properties were determined by the means of UV-Vis spectrometer, X-ray diffractometry, and thermo gravimetry. It was found that the maximum absorbing wavelength of VOPc derivatives ranged from 684 to 726 nm. Also, their solubility and Q-band were enhanced and shifted by the introduction of substitute group, respectively.

• Polymer(Korea)
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• v.36 no.6
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• pp.739-744
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• 2012

In this work, we prepared the carbons from synthesized styrene-acrylonitrile carbon precursor. The prepared carbons were chemically activated, and then the activated SAN-based carbons were named as A-SANs. The activations were carried out at different temperatures to investigate the effect of activation temperature on the surface and electrochemical properties of the activated SAN-based carbons for using as an electrode of electric double layer capacitors (EDLC). The characteristics of A-SAN were determined by X-ray diffraction (XRD), scanning electron microscopy (SEM), surface area and pore size analysis. Also, the electrochemical behaviors were observed by cyclic voltammetry and galvanostatic charge-discharge method. From the results, the A-SAN 700 showed excellent electrochemical property and the highest specific capacitance, but these properties decreased when the activation temperature was above $700^{\circ}C$. This is due to the fact that the activation at a temperature over $700^{\circ}C$ causes deformation of micropore structures.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.371-374
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• 2004

In this paper, Ni Germane-silicide formed on undoped $Si_{0.8}Ge_{0.2}$ as well as source/drain dopants doped $Si_{0.8}Ge_{0.2}$ was characterized by the four-point probe for sheet resistance. x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) and field emission scanning electron microscope (FESEM). Low resistive NiSiGe is formed by one step RTP (Rapid thermal processing) with temperature range at $500{\~}700^{\circ}C$. To enhance the thermal stability of Ni Germane-silicide, Ni/Co/TiN structure with different Co concentration were studied in this work. Low sheet resistance was obtained by Ni/Co/TiN structure with high Co concentration using 2-step RTP and it almost keeps the same low sheet resistance even after furnace annealing at $650^{\circ}C$ for 30 min.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.11
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• pp.1-7
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• 2008

In this work, a two dimensional, self-consistent Poisson-$Schr{\ddot{o}}dinger$ solver has been implemented to study C-V characteristics in nanometer scale MuGFETs with considering quantum effects. The quantum-mechanical effects on gate-channel capacitance for different device dimension and gate configurations of nanometer scale MuGFETs have been analyzed. It has been found that 4he gate-channel capacitance per unit gate area is increased as the device dimension decreases. For different gate configurations, the gate-channel capacitance is decreased with increase of effective gate number. Those resu1ts have been explained by the distribution profile of electron concentration in the silicon surface and inversion capacitance. The length of inversion-layer centroid has been calculated from inversion capacitance with device dimension and gate configurations.

• Carbon letters
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• v.17 no.1
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• pp.53-64
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• 2016

Nitrogen (N)-doped ordered mesoporous carbons (OMCs) with a dual transition metal system were synthesized as non-Pt catalysts for the ORR. The highly nitrogen doped OMCs were prepared by the precursor of ionic liquid (3-methyl-1-butylpyridine dicyanamide) for N/C species and a mesoporous silica template for the physical structure. Mostly, N-doped carbons are promoted by a single transition metal to improve catalytic activity for ORR in PEMFCs. In this study, our N-doped mesoporous carbons were promoted by the dual transition metals of iron and cobalt (Fe, Co), which were incorporated into the N-doped carbons lattice by subsequently heat treatments. All the prepared carbons were characterized by via transmission electron microscopy (TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). To evaluate the activities of synthesized doped carbons, linear sweep was recorded in an acidic solution to compare the ORR catalytic activities values for the use in the PEMFC system. The dual transition metal promotion improved the ORR activity compared with the single transition metal promotion, due to the increase in the quaternary nitrogen species from the structural change by the dual metals. The effect of different ratio of the dual metals into the N doped carbon were examined to evaluate the activities of the oxygen reduction reaction.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.182.1-182.1
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• 2016

전자빔의 운동에너지를 변화시켜 전자기장을 발생시키는 진공튜브 장치는 기본적으로 전자빔 발생부인 전자총을 핵심 구성부로 사용한다. 이러한 전자총을 이용하는 진공튜브로는 핵융합을 위해 플라즈마 가열용의 RF를 발생시키는 자이로트론 튜브와 방사광 가속기에서 전자를 가속시키는데 이용되는 클라이스트론 튜브 등이 있으며, 군사적으로는 레이더를 비롯하여 유도미상일에 들어가는 탐색기, 전투기에서 사용되는 송수신용 마이크로파 발생장치 등의 핵심부품인 진행파관 진공튜브 등이 있다. 이러한 응용분야에서는 기본적으로 고출력의 전자파를 필요로 하기 때문에 반도체를 이용한 장치로는 그 성능을 구현할 수 없다. 따라서 열음극을 사용하는 전자총을 기반으로 한 다양한 형태의 진공튜브 장치가 주로 이용되고 있다. 현재 고출력 마이크로파 진공튜브용 열음극 전자총은 대부분 외국에서 수입하고 있는데 그 이유는 전자총의 핵심 부품인 열음극 캐소드를 국내에서 개발하지 못하였기 때문이다. 하지만 본 연구에서는 텅스텐 기반의 함침형 열음극 캐소드를 국내에서 자체 개발하는데 성공하였다. 전통적으로 미국에서 개발해온 함침형 열음극 캐소드는 텅스텐 소결체에 기공을 학보하고 여기에 Ba을 중심으로 한 알칼리성 물질들을 일정비율로 혼합하여 함침한 것으로 일함수 2.1~2.3 eV 수준의 물성을 갖는다. 이에 따라 방출할 수 있는 전류의 양은 운용 온도 $1000^{\circ}C$ 정도에서 전류밀도로 대략 수 $A/cm^2$ 수준이다. 본 연구에서 개발한 캐소드는 S-type으로 알려진 것으로 BaO : CaO : $Al_2O_3$ = 4 : 1 : 1 비율로 함침되었다. 고진공장치에서 전류측정 결과 $1040^{\circ}C$에서 $10.6A/cm^2$의 전류밀도를 기록하였으며 이에 대하여 Richardson-Dushman equation으로 계산하였을 때, 약 1.9 eV의 일함수를 갖는 것을 알 수 있었다. 이는 현재 많은 응용분야에서 사용하고 있으며 함침형 캐소드에 Os이나 Ir 등의 물질을 코팅하여 일함수를 낮추고 전류밀도를 향상시킨 M-type 캐소드의 결과와 유사한 수준이다.