대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)

대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

Thermal Stability Improvement of the Ni Germano-silicide formed by a novel structure Ni/Co/TiN using 2-step RTP for Nano-Scale CMOS Technology

  • Huang Bin-Feng (Dept. of Electronics Engineering, Chungnam National University) ;
  • Oh Soon-Young (Dept. of Electronics Engineering, Chungnam National University) ;
  • Yun Jang-Gn (Dept. of Electronics Engineering, Chungnam National University) ;
  • Kim Yong-Jin (Dept. of Electronics Engineering, Chungnam National University) ;
  • Ji Hee-Hwan (Dept. of Electronics Engineering, Chungnam National University) ;
  • Kim Yong-Goo (Dept. of Electronics Engineering, Chungnam National University) ;
  • Cha Han-Seob (System IC R & D Division. Hynix Semiconductor Inc.) ;
  • Heo Sang-Bum (System IC R & D Division. Hynix Semiconductor Inc.) ;
  • Lee Jeong-Gun (System IC R & D Division. Hynix Semiconductor Inc.) ;
  • Kim Yeong-Cheol (Dept. of Materials Engineering, Korea University of Technology and Education) ;
  • Lee Hi-Deok (Dept. of Electronics Engineering, Chungnam National University)
  • 발행 : 2004.06.01
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초록

In this paper, Ni Germane-silicide formed on undoped $Si_{0.8}Ge_{0.2}$ as well as source/drain dopants doped $Si_{0.8}Ge_{0.2}$ was characterized by the four-point probe for sheet resistance. x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) and field emission scanning electron microscope (FESEM). Low resistive NiSiGe is formed by one step RTP (Rapid thermal processing) with temperature range at $500{\~}700^{\circ}C$. To enhance the thermal stability of Ni Germane-silicide, Ni/Co/TiN structure with different Co concentration were studied in this work. Low sheet resistance was obtained by Ni/Co/TiN structure with high Co concentration using 2-step RTP and it almost keeps the same low sheet resistance even after furnace annealing at $650^{\circ}C$ for 30 min.

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