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C-V Characteristics in Nanometer Scale MuGFETs with Considering Quantum Effects  

Yun, Se-Re-Na (Department of Electronics Engineering, University of Incheon)
Yu, Chong-Gun (Department of Electronics Engineering, University of Incheon)
Park, Jong-Tae (Department of Electronics Engineering, University of Incheon)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.45, no.11, 2008 , pp. 1-7 More about this Journal
Abstract
In this work, a two dimensional, self-consistent Poisson-$Schr{\ddot{o}}dinger$ solver has been implemented to study C-V characteristics in nanometer scale MuGFETs with considering quantum effects. The quantum-mechanical effects on gate-channel capacitance for different device dimension and gate configurations of nanometer scale MuGFETs have been analyzed. It has been found that 4he gate-channel capacitance per unit gate area is increased as the device dimension decreases. For different gate configurations, the gate-channel capacitance is decreased with increase of effective gate number. Those resu1ts have been explained by the distribution profile of electron concentration in the silicon surface and inversion capacitance. The length of inversion-layer centroid has been calculated from inversion capacitance with device dimension and gate configurations.
Keywords
SOI MOSFET; MuGFET; gate-channel capacitance; nano scale CMOS;
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