• Title/Summary/Keyword: electron diffraction pattern

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Applications of quantitative convergent beam electron diffraction measurement for structural characterization (Convergent beam electron diffraction의 정량분석을 응용한 재료의 구조분석)

  • Kim, Gyu-Hyeon;Lee, Min-Hui;Jeong, Sae-Eun;Go, Se-Hyeon
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2014.11a
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    • pp.176-177
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    • 2014
  • The new algorithm was proposed to quantify symmetry recorded in convergent beam electron diffraction (CBED) patterns and symmetry mapping. The proposed algorithm is based on the normalized cross-correlation coefficient (${\gamma}$) for quantifying the amount of symmetry in a CBED pattern. The quantification and mapping procedures are automatically controlled by the script implemented in Gatan Digital Micrograph$^{(c)}$. We apply the quantitative CBED measurement to a strained Si sample to test the sensitivity to defects.

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An Experimental Device for Understanding the Optical Principles of Image/Diffraction Formation (상(이미지)/회절도형 형성의 광학적 원리를 이해하기 위한 실험장치 제작)

  • Kim, Jin-Gyu;Jeong, Jong-Man;Kim, Mun-Chang;Choi, Joo-Hyoung;Kim, Youn-Joong
    • Applied Microscopy
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    • v.37 no.3
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    • pp.199-208
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    • 2007
  • We have made an optical device to study the wave optics phenomena, such as image and diffraction pattern, constructive and destructive interference, by direct operation of laser beam and optical lenses. It consists of laser beam, goniometer, objective lens, intermediate lens, projection lens, CCD system, and computing system. As a result of the performance test, we were able to magnify samples up to 44 times with the resolution of about $5{\mu}m$. It is expected to help EM users understanding more easily principles of transmission electron microscopy (TEM).

Development and Evaluation of an Electron Beam Source for Microscopy and Its Applications

  • Ahn, Seung-Joon;Oh, Tae-Sik;Kim, Ho-Seob;Ahn, Seong-Joon
    • Journal of the Optical Society of Korea
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    • v.14 no.2
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    • pp.127-130
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    • 2010
  • We have developed an efficient electron beam (e-beam) source, a microcolumn, that can be used as a source module for of microscopy and its applications. To obtain a low operating voltage, a very sharp cold field electron emitter was developed by electrochemically etching a tungsten wire. Laser diffraction was used for the fabrication of high-quality electron lenses and for their precise alignment. The measurement of the e-beam currents, and SEM images captured by the microcolumn confirmed the potential of the device as a very good e-beam source.

Transmission Electron Microscopic Study of Sancheong Halloysite (산청 할로이사이트의 투과전자현미경 연구)

  • Jeong, Gi-Young;Kim, Soo-Jin
    • Journal of the Mineralogical Society of Korea
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    • v.4 no.1
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    • pp.51-55
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    • 1991
  • Transmission electron microscopic study including single particle electron diffraction and morphological observation using replica and thin section was carried out for the Sancheong halloysite. Halloysite tube generally consists of inner circular and outer polygonal leaves. Primary triangular or concave voids are found between inner and outer leaves. Crosssection of halloysite tubes whose diameters are smaller than 500${\AA}$ are generally circular, whereas those larger than 500${\AA}$ are polygonal. Electron diffraction pattern of thick polygonal halloysite tube shows that it has a 2-layer monoclinic structure as suggested by previous workers.

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Technical Investigation into the In-situ Electron Backscatter Diffraction Analysis for the Recrystallization Study on Extra Low Carbon Steels

  • Kim, Ju-Heon;Kim, Dong-Ik;Kim, Jong Seok;Choi, Shi-Hoon;Yi, Kyung-Woo;Oh, Kyu Hwan
    • Applied Microscopy
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    • v.43 no.2
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    • pp.88-97
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    • 2013
  • Technical investigation to figure out the problems arising during in-situ heating electron backscatter diffraction (EBSD) analysis inside scanning electron microscopy (SEM) was carried out. EBSD patterns were successfully acquired up to $830^{\circ}C$ without degradation of EBSD pattern quality in steels. Several technical problems such as image drift and surface microstructure pinning were taking place during in-situ experiments. Image drift problem was successfully prevented in constant current supplying mode. It was revealed that the surface pinning problem was resulted from the $TiO_2$ oxide particle formation during heating inside SEM chamber. Surface pinning phenomenon was fairly reduced by additional platinum and carbon multi-layer coating before in-situ heating experiment, furthermore was perfectly prevented by improvement of vacuum level of SEM chamber via leakage control. Plane view in-situ observation provides better understanding on the overall feature of recrystallization phenomena and cross sectional in-situ observation provides clearer understanding on the recrystallization mechanism.

Microstructure of Nanocrystalline Electrolytic $MnO_2$ (EMD) (Nanocrystalline Electrolytic $MnO_2$ (EMD)의 미세구조 연구)

  • ;Anqiang He;Arthur H. Heuer
    • Korean Journal of Crystallography
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    • v.14 no.2
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    • pp.79-83
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    • 2003
  • The microstructure of bulk electrolytic MnO₂ (EMD) was studied using x-ray diffraction and transmission electron microscopy (TEM). The bulk sample showed a typical powder x-ray diffraction pattern of EMD materials. TEM study showed that the structure of EMD is present at two length scales;grains, ∼0.2 ㎛ in diameter, and ∼10 nm crystallites within the grain. The electron beam microdiffraction study revealed that each grain is an assemblage of multiphase with a common crystallographic orientation, and_that ∼50% of the crystallites are Ramsdellite, ∼30% are ε-MnO₂, and ∼15% are Pyrolusite. The {1120}peak located at about 67° in powder XRD pattern as well as a high-resolution electron microscope (HREM) image of (0001) plane support the existence of ε-MnO₂ phase.

Effect of Electron Irradiation on the Properties of GZO Thin Film and its Gas Sensor Application (전자빔 표면 조사에 따른 GZO 박막의 물성과 가스센서 응용 연구)

  • Kim, Dae-Il
    • Journal of the Korean Society for Heat Treatment
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    • v.24 no.3
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    • pp.140-143
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    • 2011
  • In this work, Ga doped ZnO (GZO) films were prepared by radio frequency (RF) magnetron sputtering without intentional substrate heating on glass substrate and then the effect of the intense electron irradiation on structural and electrical properties and the NOx gas sensitivity were investigated. Although as deposited GZO films showed a diffraction peak for ZnO (002) in the XRD pattern, GZO films that electron irradiated at electron energy of 900 eV showed the higher intense diffraction peaks than that of the as deposited GZO films. The electrical property of the films are also influenced with electron's energy. As deposited GZO films showed the three times higher resistivity than that of the films irradiated at 900 eV In addition, the sensitivity for NOx gas is also increased with electron irradiation energy and the film sensor showed the proportionally increased gas sensitivity with NOx concentration. This approach is promising in gaining improvement in the performance of thin film gas sensors used for the detection of hazard gas phase.

Advanced Optical and Electrical Properties of TIO Thin Films by Thermal Surface Treatment of Electron Beam Irradiation (전자빔 열 표면처리에 따른 TIO 박막의 투명전극 특성 개선 효과)

  • Yeon-Hak Lee;Min-Sung Park;Daeil Kim
    • Journal of the Korean Society for Heat Treatment
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    • v.36 no.4
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    • pp.193-197
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    • 2023
  • Transparent and conducting titanium (Ti) doped indium oxide (TIO) thin films were deposited on the poly-imide (PI) substrate with radio frequency magnetron sputtering and then electron irradiation was conducted on the TIO film's surface to investigate the effect electron irradiation on the crystallization and opto-electrical properties of the films. All x-ray diffraction (XRD) pattern showed two diffraction peaks of the In2O2 (431) and (444) planes with regardless of the electron beam irradiation energy. In the AFM analysis, the surface roughness of as deposited films was 3.29 nm, while the films electron irradiated at 700 eV, show a lower RMS roughness of 2.62 nm. In this study, the FOM of as deposited TIO films is 6.82 × 10-3 Ω-1, while the films electron irradiated at 500 eV show the higher FOM value of 1.0 × 10-2 Ω-1. Thus, it is concluded that the post-deposition electron beam irradiation at 500 eV is the one of effective methods of crystallization and enhancement of opto-electrical performance of TIO thin film deposited on the PI substrate.

Dark-field Transmission Electron Microscopy Imaging Technique to Visualize the Local Structure of Two-dimensional Material; Graphene

  • Na, Min Young;Lee, Seung-Mo;Kim, Do Hyang;Chang, Hye Jung
    • Applied Microscopy
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    • v.45 no.1
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    • pp.23-31
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    • 2015
  • Dark field (DF) transmission electron microscopy image has become a popular characterization method for two-dimensional material, graphene, since it can visualize grain structure and multilayer islands, and further provide structural information such as crystal orientation relations, defects, etc. unlike other imaging tools. Here we present microstructure of graphene, particularly, using DF imaging. High-angle grain boundary formation wass observed in heat-treated chemical vapor deposition-grown graphene on the Si substrate using patch-quilted DF imaging processing, which is supposed to occur by strain around multilayer islands. Upon the crystal orientation between layers the multilayer islands were categorized into the oriented one and the twisted one, and their local structure were compared. In addition information from each diffraction spot in selected area diffraction pattern was summarized.