• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.29.1-29.1
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• 2009

Fabrication of good quality P-type GaN remained as a challenge for many years which hindered the III-V nitrides from yielding visible light emitting devices. Firstly Amano et al succeeded in obtaining P-type GaN films using Mg doping and post Low Energy Electron Beam Irradiation (LEEBI) treatment. However only few region of the P-GaN was activated by LEEBI treatment. Later Nakamura et al succeeded in producing good quality P-GaN by thermal annealing method in which the as deposited P-GaN samples were annealed in N2 ambient at temperatures above $600^{\circ}C$. The carrier concentration of N type and P-type GaN differs by one order which have a major effect in AlGaN based deep UV-LED fabrication. So increasing the P-type GaN concentration becomes necessary. In this study we have proposed a novel method of activating P-type GaN by electrochemical potentiostatic method. Hydrogen bond in the Mg-H complexes of the P-type GaN is removed by electrochemical reaction using KOH solution as an electrolyte solution. Full structure LED sample grown by MOCVD serves as anode and platinum electrode serves as cathode. Experiments are performed by varying KOH concentration, process time and applied voltage. Secondary Ion Mass Spectroscopy (SIMS) analysis is performed to determine the hydrogen concentration in the P-GaN sample activated by annealing and electrochemical method. Results suggest that the hydrogen concentration is lesser in P-GaN sample activated by electrochemical method than conventional annealing method. The output power of the LED is also enhanced for full structure samples with electrochemical activated P-GaN. Thus we propose an efficient method for P-GaN activation by electrochemical reaction. 30% improvement in light output is obtained by electrochemical activation method.

• Macromolecular Research
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• v.11 no.5
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• pp.375-381
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• 2003

Silver salt complex membranes with glassy poly(methyl methacrylate) (PMMA) unexpectedly showed higher propylene permeance than those with rubbery poly(butyl methacrylate) (PBMA) where as neat PMMA is much less permeable to propylene than that of neat PBMA. Such unusual facilitated olefin transport has been systematically investigated by changing the side chain length of polymethacrylates (PMAs) from methyl, ethyl to butyl. The ab initio calculation showed almost the same electron densities of the carbonyl oxygens in the three PMAs, expecting very similar intensity of the interaction between carbonyl oxygen and silver ion. However, the interaction intensity decreases with the length of the alkyl side chain: PMMA > PEMA > PBMA according to wide angle X-ray scattering and FT-Raman spectroscopy. The difference in the interaction intensity may arise from the difference in the hydrophilicity of the three PMAs, as confirmed by the contact angle of water, which determines the concentrations of the ionic constituents of silver salts: free ion, contact ion pair and higher order ionic aggregate. However, propylene solubilities and facilitated propylene transport vary with the side chain length significantly even at the same concentration of the free ion, the most active olefin carrier, suggesting possible difference in the prohibition of the molecular access of propylene to silver ion by the side chains: the steric hindrance. Therefore, it may be concluded that both the hydrophilicity and the steric hindrance associated with the side chain length in the three PMAs are of pivotal importance in determining facilitated olefin transport through polymer/silver salt complex membranes.

• Macromolecular Research
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• v.13 no.4
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• pp.285-292
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• 2005

We developed alginate beads loaded with transforming growth $factor-{\beta}_{1}(TGF-{\beta}_{1})$ to examine the possible application of the scaffold and cytokine carrier in tissue engineering. In this study, bone marrow stromal cells (BMSCs) and $TGF{\beta}_{1}$ were uniformly encapsulated in the alginate beads and then cultured in vitro. The cell morphology and shape of the alginate beads were observed using inverted microscope, scanning electron microscope (SEM), histological staining and RT-PCR to confirm chondrogenic differentiation. The amount of the $TGF{\beta}_{1}$ released from the $TGF-{\beta}_{1}$ loaded alginate beads was analyzed for 28 days in vitro in a phosphate buffered saline (pH 7.4) at $37^{\circ}C$. We observed the release profile of $TGF-{\beta}_{1}$ from $TGF-{\beta}_{1}$ loaded alginate beads with a sustained release pattern for 35 days. Microscopic observation showed the open cell pore structure and abundant cells with a round morphology in the alginate beads. In addition, histology and RT-PCR results revealed the evidence of chondrogenic differentiation in the beads. In conclusion, these results confirmed that $TGF-{\beta}_{1}$ loaded alginate beads provide excellent conditions for chondrogenic differentiation.

• Journal of Communications and Networks
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• v.15 no.6
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• pp.559-568
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• 2013

We report on the first error-free terahertz (THz) wireless communication at 0.310 THz for data rates up to 8.2 Gbps using a 18-GHz-bandwidth GaAs/AlGaAs field-effect transistor as a detector. This result demonstrates that low-cost commercially-available plasma-wave transistors whose cut-off frequency is far below THz frequencies can be employed in THz communication. Wireless communication over 50 cm is presented at 1.4 Gbps using a uni-travelling-carrier photodiode as a source. Transistor integration is detailed, as it is essential to avoid any deleterious signals that would prevent successful communication. We observed an improvement of the bit error rate with increasing input THz power, followed by a degradation at high input power. Such a degradation appears at lower powers if the photodiode bias is smaller. Higher-data-rate communication is demonstrated using a frequency-multiplied source thanks to higher output power. Bit-error-rate measurements at data rates up to 10 Gbps are performed for different input THz powers. As expected, bit error rates degrade as data rate increases. However, degraded communication is observed at some specific data rates. This effect is probably due to deleterious cavity effects and/or impedance mismatches. Using such a system, realtime uncompressed high-definition video signal is successfully and robustly transmitted.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• v.2
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• pp.235-240
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• 2006

Ionospheric scintillation induces a rapid change in the amplitude and phase of radio wave signals. This is due to irregularities of electron density in the F-region of the ionosphere. It reduces the accuracy of both pseudorange and carrier phase measurements in GPS/satellite based Augmentation system (SBAS) receivers, and can cause loss of lock on the satellite signal. Scintillation is not as strong at mid-latitude regions such that positioning is not affected as much. Severe effects of scintillation occur mainly in a band approximately 20 degrees on either side of the magnetic equator and sometimes in the polar and auroral regions. Most scintillation occurs for a few hours after sunset during the peak years of the solar cycle. This paper focuses on estimation of the effects of ionospheric scintillation on GPS and SBAS signals using a software receiver. Software receivers have the advantage of flexibility over conventional receivers in examining performance. PC based receivers are especially effective in studying errors such as multipath and ionospheric scintillation. This is because it is possible to analyze IF signal data stored in host PC by the various processing algorithms. A L1 C/A software GPS receiver was developed consisting of a RF front-end module and a signal processing program on the PC. The RF front-end module consists of a down converter and a general purpose device for acquiring data. The signal processing program written in MATLAB implements signal acquisition, tracking, and pseudorange measurements. The receiver achieves standalone positioning with accuracy between 5 and 10 meters in 2drms. Typical phase locked loop (PLL) designs of GPS/SBAS receivers enable them to handle moderate amounts of scintillation. So the effects of ionospheric scintillation was estimated on the performance of GPS L1 C/A and SBAS receivers in terms of degradation of PLL accuracy considering the effect of various noise sources such as thermal noise jitter, ionospheric phase jitter and dynamic stress error.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.755-759
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• 2011

$Cu(In_{1-x},Ga_x)Se_2$ thin films have been considered as an effective absorber material for high efficient solar cells. In this paper, the CIGS thin films with varied Ga content were prepared using a co-evaporation process of three stage. We carry out structure and electrical optical property on the thin film in varied Ga content. CIGS thin films have been characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM), energy-dispersive spectroscopy(EDS), four-point probe measurement, and the Hall measurement. To optimize Ga contents, Ga/(In+Ga) ratio were changed from 0.13 to 0.72. At this time the carrier concentrations were varied from $1.22{\times}10^{11}\;cm^{-3}$ to $5.07{\times}10^{16}\;cm^{-3}$, and electrical resistivity were varied from $1.11{\times}10^0\;{\Omega}-cm$ to $1.08{\times}10^2\;{\Omega}-cm$. A strong <220/204> orientation and a lager grain size were obtained at a Ga/(In+Ga) of 0.3. We were able to achieve conversion efficiency as high as 15.95% with a Ga/(In+Ga) of 0.3.

• Applied Biological Chemistry
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• v.16 no.1
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• pp.31-40
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• 1973

Azotobacter vinelandii cell extracts and its variety of purified fractions with regard to their ability to form the redox state of the Shethna Flavoprotein (free radical form FPH.) were studied. A fluorescent flavoprotein (protein I) and a brown protein (protein II) were the most active proteins which were isolated in purified form. The free radical formation activity was substantially decreased during the purification and was completely lost upon storage in a week under nitrogen in a frozenstate. The presence of free flavin (FMN) with NADH enhanced the rate of free radical formation. The reaction of FMN and NADH was found to be catalysed by various cell fractions. A possible role of FMN as a substrate for free radical shethna flavoprotein was investigated. Slower reaction rate of $FMNH_2+Flavoprotein\;(FP){\to}FPH+FMN$ than $FMN+NADH{\to}FMNH_2$, accumulation of $FMNH_2$ ocurred which subsquently caused FPH.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.99-100
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• 2006

Silicon-on-insulator(SOI) MOSFET with SiGe/Si heterostructure channel is an attractive device due to its potent use for relaxing several limits of CMOS scaling, as well as because of high electron and hole mobility and low power dissipation operation and compatibility with Si CMOS standard processing. SOI technology is known as a possible solution for the problems of premature drain breakdown, hot carrier effects, and threshold voltage roll-off issues in sub-deca nano-scale devices. For the forthcoming generations, the combination of SiGe heterostructures and SOI can be the optimum structure, so that we have developed SOI n-MOSFETs with SiGe/Si heterostructure channel grown by reduced pressure chemical vapor deposition. The SOI n-MOSFETs with a SiGe/Si heterostructure are presented and their DC characteristics are discussed in terms of device structure and fabrication technology.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.11
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• pp.862-866
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• 2012

Surface passivation of AlGaN/GaN heterojunction structure was examined through the thermal oxidation of evaporated Al. The Al-oxide passivation increased channel conductance of two dimensional electron gas (2DEG) on the AlGaN/GaN interface. The sheet resistance of 463 ohm/${\Box}$ for 2DEG channel before $Al_2O_3$ passivation was decreased to 417 ohm/${\Box}$ after passivation. The oxidation of Al induces tensile stress to the AlGaN/GaN structure and the stress seemed to enhance the sheet carrier density of the 2DEG channel. In addition, the $Al_2O_3$ films formed by thermal oxidation of Al suppressed thermal deterioration by the high temperature annealing.

• Polymer(Korea)
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• v.28 no.3
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• pp.232-238
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• 2004

MPEG-PCL diblock copolymers consisting of methoxy poly(ethylene glycol) (MPEG) and $\varepsilon$-caprolactone (CL) as drug carriers were synthesized by ring-opening polymerization MPEG-PCL diblock copolymers were characterized by X-ray diffraction and differential scanning calorimetry. After freeze milling of block copolymers and albumin bovine-fluorescein isothiocyanate (FITC-BSA) as model protein, the wafers loaded FITC-BSA were fabricated by direct compression method. The release profiles of FITC-BSA were examined using pH 7.4 PBS for 14 days at 37$^{\circ}C$. The release amount was determined by fluorescence intensity by using the fluorescence spectrophotometer. The morphological change of wafers was observed by digital camera and scanning electron microscope. The release rate and initial burst of BSA increased with increasing PEG molecular weights and decreasing PCL molecular weights in the segments of MPEG -PCL diblock copolymers.