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http://dx.doi.org/10.4313/JKEM.2012.25.11.862

Effect of Al2O3 Surface Passivation by Thermal Oxidation of Aluminum for AlGaN/GaN Structure  

Kim, Jeong-Jin (Department of Semiconductor and Chemical Engineering, Chonbuk University)
Ahn, Ho-Kyun (Electronics and Telecommunications Research Institute)
Bae, Seong-Bum (Electronics and Telecommunications Research Institute)
Pak, Young-Rak (Electronics and Telecommunications Research Institute)
Lim, Jong-Won (Electronics and Telecommunications Research Institute)
Moon, Jae-Kyung (Electronics and Telecommunications Research Institute)
Ko, Sang-Chun (Electronics and Telecommunications Research Institute)
Shim, Kyu-Hwan (Department of Semiconductor and Chemical Engineering, Chonbuk University)
Yang, Jeon-Wook (Department of Semiconductor and Chemical Engineering, Chonbuk University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.25, no.11, 2012 , pp. 862-866 More about this Journal
Abstract
Surface passivation of AlGaN/GaN heterojunction structure was examined through the thermal oxidation of evaporated Al. The Al-oxide passivation increased channel conductance of two dimensional electron gas (2DEG) on the AlGaN/GaN interface. The sheet resistance of 463 ohm/${\Box}$ for 2DEG channel before $Al_2O_3$ passivation was decreased to 417 ohm/${\Box}$ after passivation. The oxidation of Al induces tensile stress to the AlGaN/GaN structure and the stress seemed to enhance the sheet carrier density of the 2DEG channel. In addition, the $Al_2O_3$ films formed by thermal oxidation of Al suppressed thermal deterioration by the high temperature annealing.
Keywords
AlGaN/GaN HEMT; $Al_2O_3$; Thermal oxidation; Surface passivation;
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