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http://dx.doi.org/10.4313/JKEM.2011.24.9.755

Structural and Electrical Properties of Co-evaporated Cu(In1-x,Gax)Se2 Thin Film Solar Cells with Varied Ga Content  

Lim, Jong-Youb (Department of Electronic Engineering, Chungju National University)
Lee, Yong-Koo (Department of Electronic Engineering, Chungju National University)
Park, Jong-Bum (Department of Electronic Engineering, Chungju National University)
Kim, Min-Young (Department of Electronic Engineering, Chungju National University)
Yang, Kea-Joon (Department of Electronic Engineering, Chungju National University)
Lim, Dong-Gun (Department of Electronic Engineering, Chungju National University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.24, no.9, 2011 , pp. 755-759 More about this Journal
Abstract
$Cu(In_{1-x},Ga_x)Se_2$ thin films have been considered as an effective absorber material for high efficient solar cells. In this paper, the CIGS thin films with varied Ga content were prepared using a co-evaporation process of three stage. We carry out structure and electrical optical property on the thin film in varied Ga content. CIGS thin films have been characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM), energy-dispersive spectroscopy(EDS), four-point probe measurement, and the Hall measurement. To optimize Ga contents, Ga/(In+Ga) ratio were changed from 0.13 to 0.72. At this time the carrier concentrations were varied from $1.22{\times}10^{11}\;cm^{-3}$ to $5.07{\times}10^{16}\;cm^{-3}$, and electrical resistivity were varied from $1.11{\times}10^0\;{\Omega}-cm$ to $1.08{\times}10^2\;{\Omega}-cm$. A strong <220/204> orientation and a lager grain size were obtained at a Ga/(In+Ga) of 0.3. We were able to achieve conversion efficiency as high as 15.95% with a Ga/(In+Ga) of 0.3.
Keywords
CIGS; Co-evaporation; Ga content;
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