• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.7
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• pp.69-76
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• 1995

A new device structure has been developed for p-i-n switches. In this structure, the phosphorus-diffused n$^{+}$ layter adjacent to the boron-doped anode is used to short the p$^{+}$ anode-channel(i-region). This change in the anode electrode structure results in a significant improvement in the threshold voltage-to-holding voltage($V_{Th}/V_{h}$) ratio, which is due to the suppression of the hold injection from the anode by the n$^{+}$ layer. The shorted anode p-i-n devices of a 100 .mu.m channel length show an extremely high threshold voltage in the 250~300 V range and a low holding voltage in the 5~9 V range. These features of the device are expected to acdelerate their practical application to power switching circuits.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.790-795
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• 1998

Fabrication of inverted staggered power TFT devices and electrical characteristic were investigated. 16 fingers with drain and source electrode of TFT and 100V output voltage were designed successfully. It is observed that as $V_g$ increased, $I_d$ increase exponentially. Because of localized deep states of a-Si, $I_d$ shows irregular variation at low voltage. Output and transfer characteristic showed the same as typical variation. But electrical characteristic strongly depend on the channel length and thickness of silicon nitride and amorphous silicon.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1754-1756
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• 2000

Organic semiconductors based on fused-ring polycyclic aromatic hydrocarbon have great potential to be utilized as an active layer for electronic and optoelectronic devices. In this study, pentacene thin films and electrode materials were deposited by Organic Molecular Beam Deposition(OMBD) and vacuum evaporation respectively. For the gate dielectric, polyamic acid was spin-coated and cured into polyimide at 350$^{\circ}C$. Electrical characteristics of the devices were investigated, where the channel length and width was 50${\mu}m$ and 5mm. It was found that field effect mobility was 0.012$cm^{2}/Vs$, and on/off current ratio was $10^5$.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1999-2001
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• 2000

Impulse breakdown voltage characteristics of sulphur-hexafluoride/nitrogen ($SF_{6}-N_{2}$) mixtures were presented. The applied voltages were the positive and negative lightning impulse (1.2/44${\mu}s$) and oscillating impulse ($0.4{\mu}s$/2.08MHz) voltages. The predischarge current was observed to clarify the breakdown mechanism. The electrode system was consisted of plane to plane configuration with a needle-shaped protrusion whose length and diameter are 10mm and 1mm. The measurements were carried out at the gas pressure of mixtures up to 0.5MPa with nitrogen concentrations varying from 5 to 20%. The electrical breakdown in $SF_{6}-N_{2}$ mixtures develops with steplike pulses in leader mechanism. The minimum breakdown voltages for the negative lightning and oscillating impulse voltages were higher than those for the positive.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.586-589
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• 1999

Organic semiconductors based on conjugated thiophene oligomer have great potential to be utilized as an active layer far electronic and optoelectronic devices. In this study, $\alpha$ -sexithiophene($\alpha$-6T) thin films and various electrode materials were deposited by Organic Molecular Beam Deposition(OMBD) and vacuum evaporation respectively. Those films were photolithographically patterned fur measurements. Electrical characterization of the thin film transistor with various channel length were measured, and field effect mobility is calculated by formula.

• The Korean Journal of Ceramics
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• v.6 no.4
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• pp.333-338
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• 2000

$Ba_{0.7}Sr_{0.3}TiO_3$(BST) thin films were deposited simultaneously on various electrodes and buffers by the sputtering technique. When the substrate temperature was varied, the BST thin film on each electrode showed good crystallinity above $550^{\circ}C$ as revealed by X-ray diffraction measurements. The surface morphology, determined by atomic force microscopy, indicated that the roughness of BST thin films on $RuO_2$was substrate dependent. However, BST thin films on Ru electrodes are smoother and showed no substrate dependence, probably because the precursor surface diffusion length was greater than the sinusoidal perturbations of the wavelength.

• Ceramist
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• v.21 no.1
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• pp.98-111
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• 2018

The lead-based perovskite (CH3NH3PbI3) material has a high molar coefficient, high crystallinity at low temperature, and long range of balanced electron-hole transport length. In addition, PCE of perovskite solar cells (PSCs) has been dramatically improved by over 22% by amending the electronic quality of perovskite and by using state-of-the-art hole transporting materials (HTMs) such as tetrakis(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene (spiro-OMeTAD) due to enhanced charge transport toward the electrode via properly aligned energy levels with respect to the perovskite. Replacing the spiro-OMeTAD with new HTMs with the desired properties of appropriate energy levels, high hole mobility in its pristine form, low cost, and easy processable materials is necessary for attaining highly efficient and stable PSCs, which are anticipated to be truly compatible for practical application. Furthermore, Recently Pb-free perovskite materials much attention as an alternative light-harvesting active layer material instead of lead based perovskite in photovoltaic cells. In this work, we demonstrate a Pb-free perovskite material for the light harvesting and emitter as optoelectronic devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.605-608
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• 2001

With the intention of investigating the breakdown properties of oil-immersed transformer oils in temperature range of 20∼100[$^{\circ}C$], we are made researches AC breakdown in the gap of 500∼2,500[$\mu\textrm{m}$]. The classification for the physical properties of oil for oil-immersed transformer by FTH and $^1$H-NMR experiments was confirmed to type of mineral oils. As the dependance of breakdown properties due to electrode gap length variation, breakdown voltage was found increasing according to the increase of gap, while dielectric strength was decreasing. As a result the characteristics for AC breakdown, It goes to prove that the breakdown voltage was increased to 90[$^{\circ}C$] but decreased over 90[$^{\circ}C$] in the temperature range. Also, breakdown voltage was found increasing in the increase of gap and the rising of temperature according to Weibull distribution.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2395-2397
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• 2005

A low voltage operated piezoelectric RF MEMS in-line switch has been realized by using silicon bulk micromachining technologies for advanced mobile/wireless applications. The developed RF MEMS in-line switches were comprised of four piezoelectric cantilever actuators with an Au contact metal electrode and a suspended Au signal transmission line above the silicon substrate. The measured operation dc bias voltages were ranged from 2.5 to 4 volts by varying the thickness and the length of the piezoelectric cantilever actuators, which are well agreed with the simulation results. The measured isolation and insertion loss of the switch with series configuration were -43dB and -0.21dB (including parasitic effects of the silicon substrate) at a frequency of 2GHz and an actuation voltage of 3 volts.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2235-2237
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• 2005

This paper presents the transient impedance behaviors of grounding systems to lightning impulse current. The potential rise and effective impulse ground impedance of the test grounding electrodes were measured as a function of the rise time of impulse currents and lengths of down conductor. The transient ground impedances strongly depend on the configuration and size of grounding electrodes, the impulse current shapes and lengths of down conductor, and the inductance of reduce of grounding electrode inductance is an important factor to improve the transient ground impedance.