A study on electrical characteristics of organic thin film transistor using polyimide for gate dielectric layer

Polylmide를 게이트 절연층으로 사용한 유기 박막 트랜지스터의 전기적 특성에 관한 연구

  • 김옥병 (홍익대학교 전기제어공학과) ;
  • 김윤명 (홍익대학교 전기제어공학과) ;
  • 김영관 (홍익대학교 화학공학과) ;
  • 김정수 (홍익대학교 전기제어공학과)
  • Published : 2000.07.17

Abstract

Organic semiconductors based on fused-ring polycyclic aromatic hydrocarbon have great potential to be utilized as an active layer for electronic and optoelectronic devices. In this study, pentacene thin films and electrode materials were deposited by Organic Molecular Beam Deposition(OMBD) and vacuum evaporation respectively. For the gate dielectric, polyamic acid was spin-coated and cured into polyimide at 350$^{\circ}C$. Electrical characteristics of the devices were investigated, where the channel length and width was 50${\mu}m$ and 5mm. It was found that field effect mobility was 0.012$cm^{2}/Vs$, and on/off current ratio was $10^5$.

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