• 제목/요약/키워드: electro-migration

검색결과 57건 처리시간 0.026초

$0.18{\mu}m$ Generic 공정 기반의 8비트 eFuse OTP Memory 설계 (Design of an eFuse OTP Memory of 8bits Based on a Generic Process)

  • 장지혜;김광일;전황곤;하판봉;김영희
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2011년도 춘계학술대회
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    • pp.687-691
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    • 2011
  • 본 논문에서는 아날로그 트리밍용으로 사용되는 $0.18{\mu}m$ generic 공정 기반의 EM(Electro-Migration)과 eFuse의 저항 변동을 고려한 8bit eFuse OTP (One-Time Programmable) 메모리를 설계하였다. eFuse OTP 메모리는 eFuse에 인가되는 program power를 증가시키기 위해 external program voltage를 사용하였으며, 프로그램되지 않은 cell에 흐르는 read current를 낮추기 위해 RWL (Read Word-Line) activation 이전에 BL을 VSS로 precharging하는 방식과 read NMOS transistor를 최적화 설계하였다. 그리고 프로그램된 eFuse 저항의 변동을 고려한 variable pull-up load를 갖는 sensing margin test 회로를 설계하였다. 한편 eFuse link의 length를 split하여 eFuse OTP의 프로그램 수율 (program yield)을 높였다.

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Design of 1-Kb eFuse OTP Memory IP with Reliability Considered

  • Kim, Jeong-Ho;Kim, Du-Hwi;Jin, Liyan;Ha, Pan-Bong;Kim, Young-Hee
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제11권2호
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    • pp.88-94
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    • 2011
  • In this paper, we design a 1-kb OTP (Onetime programmable) memory IP in consideration of BCD process based EM (Electro-migration) and resistance variations of eFuse. We propose a method of precharging BL to VSS before activation of RWL (Read word-line) and an optimized design of read NMOS transistor to reduce read current through a non-programmed cell. Also, we propose a sensing margin test circuit with a variable pull-up load out of consideration for resistance variations of programmed eFuse. Peak current through the non-programmed eFuse is reduced from 728 ${\mu}A$ to 61 ${\mu}A$ when a simulation is done in the read mode. Furthermore, BL (Bit-line) sensing is possible even if sensed resistance of eFuse has fallen by about 9 $k{\Omega}$ in a wafer read test through a variable pull-up load resistance of BL S/A (Sense amplifier).

Cu 배선의 평탄화를 위한 ECMD에 관한 연구 (Electro-chemical Mechanical deposition for the planarization of Cu film)

  • 정석훈;서헌덕;박범영;이현섭;정재우;박재홍;정해도
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.649-650
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    • 2005
  • 반도체는 고집적화, 고속도화, 저전력화를 목적으로 발전하고 있다. 이를 위하여 design rule의 감소, 새로운 물질과 프로세스의 적용 등 많은 연구가 이루어지고 있으며, RC delay time을 줄이기 위한 Cu 와 저유전율 재료의 적용이 그 대표적인 예라 할 수 있다. Cu 배선은 기존의 Al 배선에 비하여 높은 전자이동 (electro-migration)과 응력 이동 (stress-migration) 저항을 가짐으로써 전기적인 성능 (electrical performance) 에서 이점을 가지고 있다. 반도체에서의 Cu 배선 구조는 평탄화된 표면 및 배선들 사이에서의 좋은 전기적인 절연성을 가져야 하며, 이는 디싱(dishing)과 에로젼(erosion)의 중요한 인자가 된다. 기존의 평탄화 공정인 Cu CMP(Chemical Mechanical Polishing)에 있어서 이러한 디싱, 에로전과 같은 결함은 선결되어져야 할 문제로 인식되고 있다. 따라서 본 연구에서는 이러한 결합들을 감소시키기 위한 새로운 평탄화 방법으로 Cu gap-filling 을 하는 동시에 평탄화된 표면을 이루는 ECMD(Electro-Chemical Mechanical Deposition) 공정의 전기적 기계적 특성을 파악하였다.

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마이크로 전기영동 소자의 제작과 유로 면 특성에 따른 전기삼투 및 전기영동 효과 (Fabrication of electro phoresis microchips and effects of channel surface properties)

  • 김민수;조승일;이국녕;김용권
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2003년도 추계학술대회 논문집 전기물성,응용부문
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    • pp.286-289
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    • 2003
  • We investigated the influence of the properties of substrate material on the separation efficiency in microchip electrophoresis. We fabricated the various microchips and studied separation efficiency in microchannels composed of a single material such as quartz, glass, polydimethylsiloxane (PDMS), and polymethylmetha crylate (PMMA), as well as hybrid micro channels composed of different materials. New fabrication process for glass chip was suggested and some treatment is added to improve fabrication process in other chip. Separation efficiency was compared by measuring migration times and bandwidths of EOF and analytes in each microchip. The efficiency is the function of migration time, which is affected by the electroosmotic flow (EOF), and bandwidth of an analyte. EOF is highly dependent upon the characteristics of a microchannel wall surface. Migration time was more reproducible in silica chips than that of PDMS chip and more band broadening was observed in the microchip composed of hybrid material due to non-uniformity of surface charge density at the walls of the channel.

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Ag Paste bump 구조를 갖는 인쇄회로기판의 Ag migration 발생 안전성 평가 (Investigation of Ag Migration from Ag Paste Bump in Printed Circuit Board)

  • 송철호;김영훈;이상민;목지수;양용석
    • 한국재료학회지
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    • 제20권1호
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    • pp.19-24
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    • 2010
  • The current study examined Ag migration from the Ag paste bump in the SABiT technology-applied PCB. A series of experiments were performed to measure the existence/non-existence of Ag in the insulating prepreg region. The average grain size of Ag paste was 30 nm according to X-ray diffraction (XRD) measurement. Conventional XRD showed limitations in finding a small amount of Ag in the prepreg region. The surface morphology and cross section view in the Cu line-Ag paste bump-Cu line structure were observed using a field emission scanning electron microscope (FE-SEM). The amount of Ag as a function of distance from the edge of Ag paste bump was obtained by FE-SEM with energy dispersive spectroscopy (EDS). We used an electron probe micro analyzer (EPMA) to improve the detecting resolution of Ag content and achieved the Ag distribution function as a function of the distance from the edge of the Ag paste bump. The same method with EPMA was applied for Cu filled via instead of Ag paste bump. We compared the distribution function of Ag and Cu, obtained from EPMA, and concluded that there was no considerable Ag migration effect for the SABiT technology-applied printed circuit board (PCB).

전기화학 기계적 연마를 이용한 Cu 배선의 평탄화 (Planarizaiton of Cu Interconnect using ECMP Process)

  • 정석훈;서헌덕;박범영;박재홍;정해도
    • 한국전기전자재료학회논문지
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    • 제20권3호
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    • pp.213-217
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    • 2007
  • Copper has been used as an interconnect material in the fabrication of semiconductor devices, because of its higher electrical conductivity and superior electro-migration resistance. Chemical mechanical polishing(CMP) technique is required to planarize the overburden Cu film in an interconnect process. Various problems such as dishing, erosion, and delamination are caused by the high pressure and chemical effects in the Cu CMP process. But these problems have to be solved for the fabrication of the next generation semiconductor devices. Therefore, new process which is electro-chemical mechanical polishing(ECMP) or electro-chemical mechanical planarization was introduced to solve the technical difficulties and problems in CMP process. In the ECMP process, Cu ions are dissolved electrochemically by the applying an anodic potential energy on the Cu surface in an electrolyte. And then, Cu complex layer are mechanically removed by the mechanical effects between pad and abrasive. This paper focuses on the manufacturing of ECMP system and its process. ECMP equipment which has better performance and stability was manufactured for the planarization process.

전기도금된 Cu-Sn과 Ni preplated frame의 특성 비교 (Comparison of the Characteristics of Cu-Sn and Ni Pre-Plated Frames Prepared by Electro-Plating)

  • 이대훈;장태석;홍순성;이지원;양형우;한병근
    • 한국표면공학회지
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    • 제39권6호
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    • pp.276-281
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    • 2006
  • In order to improve the performance of PPFs (Pre-Plated Frames), a PPF that employed a Cu-Sn alloy instead of conventionally used Ni was developed and then its properties were investigated. It was found that the electoplated Cu-Sn alloy layer was a mixture of uniformly distributed fine crystallites, resulting In better wettability and crack resistance than those of Ni PPF. Moreover, as in Cu/Ni/Pd/Au PPF, migration of copper atoms from the base metal to the top of the Cu/Cu-Sn/Pd/Au PPF surface was not found although the Cu-Sn layer itself contained considerable amount of copper. It was expected that, by using the newly developed Cu-Sn PPF, any possible heat generation and signal interrupt caused by an external electro-magnetic field could be reduced because the Cu-Sn layer was paramagnetic, i.e., nonmagnetic.

혼합재 치환율에 따른 모르타르의 염소이온 확산 특성 (Characteristic of Chloride ion Diffusion in Mortar According to the Substitution Ratios of the Additive)

  • 양승규;정연식;이웅종;유재상;이종열
    • 한국콘크리트학회:학술대회논문집
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    • 한국콘크리트학회 2002년도 가을 학술발표회 논문집
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    • pp.17-22
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    • 2002
  • Chloride ions have a tendency to penetrate into concrete and proceed the corrosion by depassivating rebar surface. Thus the deteriorated concrete is subject to experience severe degrading of durability under marine environment. Physical properties of mortar, such as, compressive strength and penetration depth of chloride ion were investigated. And to investigate the effect of containing SG, FA in mortar, the diffusion coefficient of chloride was measured through an electro - migration test. The diffusion coefficient of chloride was decreased with the increase of replacement ratio of SG compared with plain specimen.

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고로슬래그미분말 혼합 콘크리트의 염소이온 확산특성 (Characteristic of Chloride Ion Diffusion in Concrete Containing GGBF)

  • 문한영;김홍삼;김진철;최두선
    • 한국콘크리트학회:학술대회논문집
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    • 한국콘크리트학회 2001년도 가을 학술발표회 논문집
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    • pp.793-796
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    • 2001
  • Physical properties of concrete, Such as, compressive strength, permeable pore and penetration depth of chloride ion were investigated. And to investigate the effect of containing GGBF in concrete, the diffusion coefficient of chloride was measured through an electro- migration test. The diffusion coefficient of chloride was decreased with increase of replacement ratios of GGBF when compared to OPC. Relation coefficients between physical properties of concrete and diffusion coefficient of chloride were more than 0.9.

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고강도 나노트윈 구리박막의 전기화학적 합성 (Electrochemical Synthesis of High Strength Nanotwin Copper Films)

  • 왕건;서성호;진상현;이준균;유봉영
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2014년도 추계학술대회 논문집
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    • pp.75-76
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    • 2014
  • Copper는 2차 전지 및 PCB 등 Electrical Device에 빠짐없이 들어가는 핵심 부품이다. 반도체 배선재료 또한 Aluminum에서 Copper로 대체되어 Electrical Conductivity 및 Electro-migration 문제를 해결할 수 있었다. 최근 배선의 미세화 및 전지용량 증가로 인해 보다 얇으면서, 동시에 높은 기계적 강도를 가지는 Copper Film의 필요성이 요구되고 있다.

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