• E2M - 전기 전자와 첨단 소재
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• 제7권5호
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• pp.376-382
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• 1994

In this study we developed a program(DEVSIM) to simulate the two dimensional distribution of the electrostatic potential and the electric field of the arbitrary structure consisting of GaAs/AlGaAs semiconductor and metal as well as dielectric. By the comparision of the electric field distribution of GaAs MESFETs with the various recess gates we proposed a suitable device structure to improve the breakdown characteristics of MESFET. According to the results of simulation the breakdown characteristics were improved as the thickness of the active epitaxial layer was decreased. And the planar structure, which had the highly doped layer under the drain for the ohmic contact, was the worst because the highly doped layer prevented the space charge layer below the gate from extending to the drain, which produced the narrow spaced distribution of the electrostatic potential contours resulting in the high electric field near the drain end. Instead of the planar structure with the highly doped drain the recess gate structure having the highly doped epitaxial drain layer show the better breakdown characteristics by allowing the extention of the space charge layer to the drain. Especially, the structure in which the part of the drain epitaxial layer near the gate show the more improvement of the breakdown characteristics.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1990년도 추계학술대회 논문집 학회본부
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• pp.15-18
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• 1990

In this paper, in order to optimize the shape of electrode to achieve prescribed electric field intensity distribution along the surface of electrode, sensitivity analysis based on finite element method is proposed. The objective function of this problem is the difference of calculated electric field intensity at given design and prescribed electric field intensity. So, the problem is to find the shape of electrode to minimize the objective function defined above. The result of numerical example shows that maximum electric field error is about 0.1% and the usefulness of this shape optimal design procedure.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.333-335
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• 2005

The simulation of electric field distribution of discharge tube with globular $ZrO_2$ and the removal characteristic of Escherichia coli by the discharge tube with globular $ZrO_2$ were estimated. The removal characteristic of Escherichia coli was related to the input voltage because the electric field is increased according to input voltage. As the particle size of $ZrO_2$ beads increased, the removal time of Escherichia coli was shortened due to the dielectric polarization of $ZrO_2$ beads.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 E
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• pp.1908-1910
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• 1997

The electric and magnetic fields (EMFs) near 345/154 kV overhead transmission lines were measured. The average values of maximum electric field and magnetic field for 44 transmission lines were 1.11 kV/m and 24.5 mG, respectively. These values were lower than any standards of advanced countries. The EMFs of distribution lines and substation, and electric appliances were also measured and compared with those of transmission lines.

• Journal of Electrical Engineering and Technology
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• 제9권1호
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• pp.247-253
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• 2014

In this paper, a new two dimensional (2D) analytical modeling and simulation for a Dual Material Double Gate tunnel field effect transistor (DMDG TFET) is proposed. The Parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions and analytical expressions for surface potential and electric field are derived. This electric field distribution is further used to calculate the tunnelling generation rate and thus we numerically extract the tunnelling current. The results show a significant improvement in on-current characteristics while short channel effects are greatly reduced. Effectiveness of the proposed model has been confirmed by comparing the analytical results with the TCAD simulation results.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 유기절연재료 방전 플라즈마연구회
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• pp.15-18
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• 2003

In this paper, We explained the best shape design of electrode for discharge on the water. Electrode with rounding was reduced maximum electric field of over 40% to electrode without rounding for discharge on the water and the best shape of electrode for discharge on the water designed when shape of electrode had a curve radius of over $60^{\circ}$ at electrode's face to electrode's face with minimum distance and a curve radius of under $120^{\circ}$ at electrode's side face to electrode's front face. And When dielectric beads are used between electrodes, the life of electrodes is improved by lower stress of electric field on surface of electrodes.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권6호
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• pp.346-353
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• 2000

In this paper, we developed 3 dimensional Surface Charge Method which could calculate electric fields inside GIS with a small void in solid insulator or with a metal impurity. We find a metal impurity makes much more non-uniform electric field distribution inside GIS than a small void. We also find electric field is much more increased when a metal impurity is close to solid insulator surface at high voltage conductor.

• Journal of Electrical Engineering and Technology
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• 제7권6호
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• pp.977-982
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• 2012

In order to find out partial discharge (PD) phenomena in the cable joint due to the poor workmanship during the installation, the relationship between PD inception voltages and joint defects was investigated. For the purpose, in the joint of 22.9kV CNCV cables, electric fields were calculated for various semiconductive layer wrong positioning (WP) defects. And, PDIV were investigated through the experiments and compared with the results of electric field analysis. In all WP defect cases, the PD inception field calculated using measured PDIVs was similarly shown to be the average value of 1.84kV/mm. In addition, the calculated PDIV and the measured PDIV were almost equal, from the PDIV calculation using maximum electric fields and the measured PDIV for the normal case. Throughout this study, it is possible to analyze WP defects due to the poor workmanship and to establish better joint design for the distribution grade extruded cable system.

• 한국복합재료학회:학술대회논문집
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• 한국복합재료학회 2005년도 춘계학술발표대회 논문집
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• pp.1-4
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• 2005

A higher order zig-zag shell theory is developed to refine accurately predict deformation and stress of smart shell structures under the mechanical, thermal, and electric loading. The displacement fields through the thickness are constructed by superimposing linear zig-zag field to the smooth globally cubic varying field. Smooth parabolic distribution through the thickness is assumed in the transverse deflection in order to consider transverse normal deformation. The mechanical, thermal, and electric loading is applied in the sinusoidal distribution function in the in-surface direction. Thermal and electric loading is given in the linear variation through the thickness. Especially, in electric loading case, voltage is only applied in piezo-layer. The layer-dependent degrees of freedom of displacement fields are expressed in terms of reference primary degrees of freedom by applying interface continuity conditions as well as bounding surface conditions of transverse shear stresses. In order to obtain accurate transverse shear and normal stresses, integration of equilibrium equation approach is used. The numerical examples of present theory demonstrate the accuracy and efficiency of the proposed theory. The present theory is suitable for the predictions of behaviors of thick smart composite shell under mechanical, thermal, and electric loadings combined.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.396-399
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• 2008

In this study, the electric field distributions have been investigated by simulation in accordance with the various shapes of ITO-electrodes. Also we have measured the density of excited Xe atoms in the 1s5 state in discharge cell, where the gap distance of 60 um, gas pressure of 400 Torr, Xe contents of 7%, and sustaining voltage of 200 V are kept in this experiment. The maximum density of excited Xe atoms in the 1s5 state in a discharge cell for the fish-boned, T shaped and squared ITO electrodes have been measured to be $3.01\;{\times}\;10^{13}\;cm^{-3}$, $2.66\;{\times}\;10^{13}\;cm^{-3}$ and $2.06\;{\times}\;10^{13}\;cm^{-3}$, respectively. It is shown that the electric field distribution with different ITO Electrodes is essential factor for these maximum density of excited Xe atoms in discharge cell.