• Journal of the Korean Ceramic Society
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• v.41 no.10 s.269
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• pp.728-734
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• 2004

The effect of microstructure of WC-Co substrates which have different WC grain sizes from submicron to 5 $\mu$m on the diamond-substrate adhesion strength was investigated. The substrates were pre-treated by two methods : chemical etching with Murakami's solution and subsequently with $H_2SO_4$, and thermal heat-treatment. The adhesion strength was estimated by degree of peeling after Rockwell indentation. Diamond films of 20 $\mu$m thickness deposited on the heat-treated substrates showed an excellent adhesion strength at the load of 100 kg, which ascribed to the large and elongated WC grains. However, the cutting edge of insert was deformed after heat treatment and the surface morphology of heat treated substrate strongly affected on the surface roughness of the deposited diamond films. On the contrary, the diamond film of 10 $\mu$m in thickness on the chemically etched substrates of average WC grain size over 2 $\mu$m showed good adhesion strength enough not to peel-off under a load of 60 kg. Especially, the substrate of average WC grain size over 5 $\mu$m exhibited much improved reliability of adhesion comparing with the substrate of average grain size under 2 $\mu$m. No substrate deformation was observed in this case after the chemical etching, which is more advantageous and more practical in terms of precious machining than the heat treatment case.

• Journal of Biosystems Engineering
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• v.43 no.2
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• pp.148-159
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• 2018

Purpose: Unmanned air vehicle (UAV) remote sensing was applied to test various vegetation indices and make prediction models of protein content of rice for monitoring grain quality and proper management practice. Methods: Image acquisition was carried out by using NIR (Green, Red, NIR), RGB and RE (Blue, Green, Red-edge) camera mounted on UAV. Sampling was done synchronously at the geo-referenced points and GPS locations were recorded. Paddy samples were air-dried to 15% moisture content, and then dehulled and milled to 92% milling yield and measured the protein content by near-infrared spectroscopy. Results: Artificial neural network showed the better performance with $R^2$ (coefficient of determination) of 0.740, NSE (Nash-Sutcliffe model efficiency coefficient) of 0.733 and RMSE (root mean square error) of 0.187% considering all 54 samples than the models developed by PR (polynomial regression), SLR (simple linear regression), and PLSR (partial least square regression). PLSR calibration models showed almost similar result with PR as 0.663 ($R^2$) and 0.169% (RMSE) for cloud-free samples and 0.491 ($R^2$) and 0.217% (RMSE) for cloud-shadowed samples. However, the validation models performed poorly. This study revealed that there is a highly significant correlation between NDVI (normalized difference vegetation index) and protein content in rice. For the cloud-free samples, the SLR models showed $R^2=0.553$ and RMSE = 0.210%, and for cloud-shadowed samples showed 0.479 as $R^2$ and 0.225% as RMSE respectively. Conclusion: There is a significant correlation between spectral bands and grain protein content. Artificial neural networks have the strong advantages to fit the nonlinear problem when a sigmoid activation function is used in the hidden layer. Quantitatively, the neural network model obtained a higher precision result with a mean absolute relative error (MARE) of 2.18% and root mean square error (RMSE) of 0.187%.

• Journal of Korean Ophthalmic Optics Society
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• v.10 no.3
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• pp.193-203
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• 2005

Highly c-axis oriented nanocrystalline ZnO thin films on silica glass substrates were prepared by spin coating-pyrolysis process with a zinc naphthenate precursor. Only the XRD intensity peak of (002) phase was observed for all samples. With an increase in heat treatment temperature, the peak intensity of (002) phase increases. No significant aggregation of particle was present. From scanning probe microscopy analyses, three-dimensional grain growth, which was thought to be due to inhomogeneous substrate surface and c-axis oriented grain growth of the ZnO phase, was independent on heal-treatment temperature. Highly homogeneous surface of the highly-oriented ZnO film was observed at $800^{\circ}C$. All the films exhibited a high transmittance (above 80%) in visible region except film heat treated at $1000^{\circ}C$, and showed a sharp fundamental absorption edge at about $0.38{\sim}0.40{\mu}m$. The estimated energy band gap for all the films were within the range previously reported for films and single crystal. ZnO films, consisting of densely packed grains with smooth surface morphology were obtained by heat treatment at $600^{\circ}C{\sim}800^{\circ}C$, expected to be ideal for practical application, such as transparent conductive film and optical device.

• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.356-360
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• 2001

Properties of a free-standing diamond wafer with a diameter of 80 mm and a thickness of 900~950 $mu extrm{m}$ deposited by the multi-cathode direct current plasma assisted chemical vapor deposition (MCDC PACVD) method were investigated. Defects of the diamond film were observed by optical transmission microscopy and its crystallinity was characterized by Raman and IR spectroscopy. Defects were distributed partially on boundaries of the grain. In the grain, (111) plane contained a higher defect density than that on (100) plane. FWHM of Raman diamond peak and IR transmission at 10.6 $\mu\textrm{m}$ were 4.6 $\textrm{cm}^{-1}$ /~5.3 $\textrm{cm}^{-1}$ and 51.7 ~ 61.9 %, and their uniformity was $\pm$7% and $\pm$9%, respectively. The diamond quality decreased with going from center to edge of the wafer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.11
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• pp.900-904
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• 2011

In this paper, we investigated an anomalous hump phenomenon under the positive bias stress in p-type LTPS TFTs. The devices with inferior electrical performance also show larger hump phenomenon. which can be explained by the sub-channel induced from trapped electrons under thinner gate oxide region. We can confirm that the devices with larger hump have larger interface trap density ($D_{it}$) and grain boundary trap density ($N_{trap}$) extracted by low-high frequency capacitance method and Levinson-Proano method, respectively. From the C-V with I-V transfer characteristics, the trapped electrons causing hump seem to be generated particularly from the S/D and gate overlapped region. Based on these analysis, the major cause of an anomalous hump phenomenon under the positive bias stress in p-type poly-Si TFTs is explained by the GIDL occurring in the S/D and gate overlapped region and the traps existing in the channel edge region where the gate oxide becomes thinner, which can be inferred by the fact that the magnitude of the hump is dependent on the average trap densities.

• Journal of the Korea Computer Graphics Society
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• v.14 no.1
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• pp.1-10
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• 2008

In this paper, we present a novel method for creating a hand-painted painterly animation, starting from a video input. One of the most important aspects in painterly animation is to maintain the temporal coherence of brush strokes between frames, which plays a vital role to warrant a smooth transition between frames. Our unique utilization of motion areas enables users to produce a smooth movement of brush strokes. The motion areas are the parts where objects move between frames and they are categorized in two main types. A strong motion area is the part where the movement of real edges and hidden edges is determined by the motion vector between frames. The real edge is the outline of an object and the hidden edge is the boundary to represent the direction of a grain of intensity in the areas with gradations. A weak motion area is the remainder after subtracting the strong motion area from the entire motion area. Temporally coherent painterly animation is achieved by re-painting the brush strokes on the canvas using two motion areas, resulting in a natural and hand-painted appearance.

• Korean Journal of Materials Research
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• v.20 no.1
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• pp.19-24
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• 2010

The current study examined Ag migration from the Ag paste bump in the SABiT technology-applied PCB. A series of experiments were performed to measure the existence/non-existence of Ag in the insulating prepreg region. The average grain size of Ag paste was 30 nm according to X-ray diffraction (XRD) measurement. Conventional XRD showed limitations in finding a small amount of Ag in the prepreg region. The surface morphology and cross section view in the Cu line-Ag paste bump-Cu line structure were observed using a field emission scanning electron microscope (FE-SEM). The amount of Ag as a function of distance from the edge of Ag paste bump was obtained by FE-SEM with energy dispersive spectroscopy (EDS). We used an electron probe micro analyzer (EPMA) to improve the detecting resolution of Ag content and achieved the Ag distribution function as a function of the distance from the edge of the Ag paste bump. The same method with EPMA was applied for Cu filled via instead of Ag paste bump. We compared the distribution function of Ag and Cu, obtained from EPMA, and concluded that there was no considerable Ag migration effect for the SABiT technology-applied printed circuit board (PCB).

• Transactions on Electrical and Electronic Materials
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• v.13 no.2
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• pp.64-68
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• 2012

We have successfully demonstrated a bandgap alteration of transparent zinc oxide (ZnO) thin film with Mg dopant by using sol-gel spin coating technique. By increasing the dopant from 0 to 30 atomic percent (at.%), a decrement value in the cutoff is observed, where the absorption edge shifts continuously to the shorter wavelength side, towards 300 nm. This resulted in a significant bandgap increment from 3.28 to 3.57 eV. However, the transmittance of the thin film at 350-800 nm gradually downgraded, from 93 to 80 % which is most probably due to the grain size that becomes bigger, and it also affected the electrical properties. The decrement from 45 to 0.05 mA at +10 V was observed in the I-V characteristics, concluding the significant relationship; where higher optical bandgap materials will exhibit lower conductivity. These findings may be useful in optoelectronics devices.

• Korean Journal of Materials Research
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• v.23 no.9
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• pp.531-536
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• 2013

This paper investigates the effect of prolonged high temperature exposure on concentric laminated $Al_2O_3-ZrO_2$ composites. An ultrafine scale microstructure with a cellular 7 layer concentric lamination with unidirectional alignment was fabricated by a multi-pass extrusion method. Each laminate in the microstructure was $2-3{\mu}m$ thick. An alternate lamina was composed of 75%$Al_2O_3$-(25%m-$ZrO_2$) and t-$ZrO_2$ ceramics. The composite was sintered at $1500^{\circ}C$ and subjected to $1450^{\circ}C$ temperature for 24 hours to 72 hours. We investigated the effect of long time high temperature exposure on the generation of residual stress and grain growth and their effect on the overall stability of the composites. The residual stress development and its subsequent effect on the microstructure with the edge cracking behavior mechanism were investigated. The residual stress in the concentric laminated microstructure causes extensive micro cracks in the t-$ZrO_2$ layer, despite the very thin laminate thickness. The material properties like Vickers hardness and fracture toughness were measured and evaluated along with the microstructure of the composites with prolonged high temperature exposure.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2008.05a
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• pp.89-92
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• 2008

In generally, the regression rate equation was only expressed by function of oxidizer massflux in hybrid propulsion system. This can not represent the local value of regression rate along with oxidizer flow direction. In this study, experimental studies were performed with several pieces of solid fuel. As results, the local regression rate decreases rapidly with axial location near entrance, and increases with axial distance from the leading edge. The empirical formula for local regression rate with function of oxidizer massflux and length was derived.