Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Bandgap Alteration of Transparent Zinc Oxide Thin Film with Mg Dopant

  • Salina, M. (NANO ElecTronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA) ;
  • Ahmad, R. (NANO ElecTronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA) ;
  • Suriani, A.B. (NANO SciTech Centre, Institute of Sciences, Universiti Teknologi MARA) ;
  • Rusop, M. (NANO ElecTronic Centre, Faculty of Electrical Engineering and NANO SciTech Centre, Institute of Sciences, Universiti Teknologi MARA)
  • Received : 2011.11.03
  • Accepted : 2012.01.21
  • Published : 2012.04.25
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Abstract

We have successfully demonstrated a bandgap alteration of transparent zinc oxide (ZnO) thin film with Mg dopant by using sol-gel spin coating technique. By increasing the dopant from 0 to 30 atomic percent (at.%), a decrement value in the cutoff is observed, where the absorption edge shifts continuously to the shorter wavelength side, towards 300 nm. This resulted in a significant bandgap increment from 3.28 to 3.57 eV. However, the transmittance of the thin film at 350-800 nm gradually downgraded, from 93 to 80 % which is most probably due to the grain size that becomes bigger, and it also affected the electrical properties. The decrement from 45 to 0.05 mA at +10 V was observed in the I-V characteristics, concluding the significant relationship; where higher optical bandgap materials will exhibit lower conductivity. These findings may be useful in optoelectronics devices.

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