Bandgap Alteration of Transparent Zinc Oxide Thin Film with Mg Dopant |
Salina, M.
(NANO ElecTronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA)
Ahmad, R. (NANO ElecTronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA) Suriani, A.B. (NANO SciTech Centre, Institute of Sciences, Universiti Teknologi MARA) Rusop, M. (NANO ElecTronic Centre, Faculty of Electrical Engineering and NANO SciTech Centre, Institute of Sciences, Universiti Teknologi MARA) |
1 | L. M. Li, Z. F. Du, and T. H. Wang, Sens. Act. B:Chem. 147, 165 (2010) [DOI: 10.1016/jsnb.2009.12.058]. DOI ScienceOn |
2 | T. -H. Fang, S. -H. Kang, J. All. Comp. 492, 536 (2010) [DOI: 10.1016/.jallcom.2009.11.168]. DOI ScienceOn |
3 | M. Ghosh,and A. Raychaudhuri, Trans. Nanotech. 10, 555 (2011) [DOI: 10.1109/TNANO.2010.2050899]. DOI ScienceOn |
4 | S. B. Zhang, S. -H. Wei, A. Shunger, Phys. Rev. B, 63, 075205 (2001) [DOI: 10.1103/PhysRevB.63.075205 ]. DOI ScienceOn |
5 | P. Kuznetsov, V. Lusanov, G. Yakushcheva, V. Jitov, L. Zakharov, I. Kotelyanskii, and V. Kozlovsky, IOP Conf. Ser.: Mater. Sci. Eng. 8, 012040 (2010) [DOI: 10.1088/1757-899X/8/1/012040]. DOI ScienceOn |
6 | A. El-Shaer, A. Che Mofor, A. Bakin, M. Kreye, A. Waag, Superlattices and Microstructures, 38, 265 (2005) [DOI: 10.1016/ j.spmi.2005.08.025]. DOI ScienceOn |
7 | I.-S. Kim, S. -H. Jeong, S. S. Kim, and B. -T. Lee, Semicond. Sci. Technol. 19, 29 (2004) [DOI: 10.1088/0268-1242/19/3/L06]. |
8 | C. H. Chia, Y. J. Lai, T. C. Han, J. W. Chiou, Y. M. Hu, and W. C. Chou, Appl. Phys. Lett. 96, 081903 (2010) [DOI: 10.1063/1.3327338]. DOI ScienceOn |
9 | Y. Y. Kim, C. H. An, H. K. Cho, J. H. Kim, H. S. Lee, E. S. Jung, H. S. Kim,Thin Solid Films 516, 5602 (2008) [DOI: 10.1016/ j.tsf.2007.07.108]. DOI ScienceOn |
10 | J. Liang, H. Wu, N. Chen, and T. Xu, Semicond. Sci. Technol. 20, L15 (2005) [DOI: 10.1088/0268-1242/20/5/L01] DOI ScienceOn |
11 | S. R. Meher, K. P. Biju and M. K. Jain, J. Sol-Gel Sci. Tech.52, 228 (2009) [DOI: 10.1007/s10971-009-2032-0] DOI ScienceOn |
12 | H. Li, J. Wang, H. Liu, C. Yang, H. Xu, X. Li, and H. Cui, Vacuum 77, 57 (2004) [DOI: 10.1016/j.vacuum.2004.08.003]. DOI ScienceOn |
13 | S. T. Tan, B. J. Chen, X. W. Sun, W. J. Fan, H. S. Kwok, X. H. Zhang, and S. J. Chua, J. Appl. Phys. 98, 013505 (2005) [DOI: 10.1063/1.1940137]. DOI ScienceOn |
14 | Y. Zhang, H. Jia, P. Li, F. Yang, and Z. Zheng, Opt. Comm. 284, 236 (2011) [DOI:10.1016/j.optcomm.2010.08.084]. DOI ScienceOn |
15 | A. Kaushal, and D. Kaur, Sol. En. Mater. Sol. Cells 93, (2009) [DOI: 10.1016/j.solmat.2008.09.039]. |
16 | A. E. Rakhshani, J. Appl. Phys. 108, 094502 (2010) [DOI: 10.1063/1.3490622]. DOI ScienceOn |
17 | M. Salina, M. Z. Sahdan, N. F. Jusoh, R. A. Kadir, and M.Rusop, Proceeding of ICEDSA2011, 423 (2011) [DOI: 10.1109/ICEDSA. 2010.5503027]. |
18 | S. Chiaria, M. Goano, and E. Belloti, J. Quant. Elec. 47, 661 (2011) [DOI: 10.1109/JQE.2011.2104940]. DOI ScienceOn |
19 | H. K. Liang, S. F. Yu, and H. Y. Yang, App. Phys. Lett. 97, 241107 (2010) [DOI: 10.1063/1.3527922]. DOI ScienceOn |
20 | A. B. Djurisic, A. M. C. Ng, and X. Y. Chen, Prog. Quant. Elec. 34, 191 (2010) [DOI: 10.1016/j.quantelec.2010.04.001]. DOI ScienceOn |
21 | T. Oshio, K. Masuko, A. Ashida, T. Yosgimura, and N. Fujimura, J. App. Phys. 103, 093717 (2010) [DOI: 10.1063/1.2905315]. |