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http://dx.doi.org/10.4313/TEEM.2012.13.2.64

Bandgap Alteration of Transparent Zinc Oxide Thin Film with Mg Dopant  

Salina, M. (NANO ElecTronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA)
Ahmad, R. (NANO ElecTronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA)
Suriani, A.B. (NANO SciTech Centre, Institute of Sciences, Universiti Teknologi MARA)
Rusop, M. (NANO ElecTronic Centre, Faculty of Electrical Engineering and NANO SciTech Centre, Institute of Sciences, Universiti Teknologi MARA)
Publication Information
Transactions on Electrical and Electronic Materials / v.13, no.2, 2012 , pp. 64-68 More about this Journal
Abstract
We have successfully demonstrated a bandgap alteration of transparent zinc oxide (ZnO) thin film with Mg dopant by using sol-gel spin coating technique. By increasing the dopant from 0 to 30 atomic percent (at.%), a decrement value in the cutoff is observed, where the absorption edge shifts continuously to the shorter wavelength side, towards 300 nm. This resulted in a significant bandgap increment from 3.28 to 3.57 eV. However, the transmittance of the thin film at 350-800 nm gradually downgraded, from 93 to 80 % which is most probably due to the grain size that becomes bigger, and it also affected the electrical properties. The decrement from 45 to 0.05 mA at +10 V was observed in the I-V characteristics, concluding the significant relationship; where higher optical bandgap materials will exhibit lower conductivity. These findings may be useful in optoelectronics devices.
Keywords
ZnO; MgZnO; Optical band gap; Thin film;
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