• Title/Summary/Keyword: dual-gate mode

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Implementation of Dual-Mode Channel Card for SDR-based Smart Antenna System (SDR기반 스마트 안테나 시스템을 위한 듀얼 모드 채널 카드 구현)

  • Kim, Jong-Eun;Choi, Seung-Won
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.33 no.12A
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    • pp.1172-1176
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    • 2008
  • In this paper, we describe the implementation and performance of a dual-mode Software Define Radio (SDR) smart antenna base station system. SDR technology enables a communication system to be reconfigured through software downloads to the flexible hardware platform that is implemented using programmable devices such as Digital Signal Processors (DSPs), Field Programmable Gate Arrays (FPGAs), and microprocessors. The presented base station channel card comprises the physical layer (pHY) including the baseband modem as well as the beamforming module. This channel card is designed to support TDD High-Speed Downlink Packet Access (HSDPA) as well as Wireless Broadband Portable Internet (WiBro) utilizing the SDR technology. We first describe the operations and functions required in WiBro and TDD HSDPA. Then, we explain the channel card design procedure and hardware implementation. Finally, we evaluate WiBro and TDD HSDPA performance by simulation and actual channel-card-based processing. Our smart antenna base-station dual-mode channel card shows flexibility and tremendous performance gains in terms of communication capacity and cell coverage.

DC Power Dissipation Characteristics for Dual-mode Variable Conversion Gain Mixer (이중모우드 가변 변환이득 믹서의 전력 효율 특성)

  • Park, Hyun-Woo;Koo, Kyung-Heon
    • Proceedings of the IEEK Conference
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    • 2006.06a
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    • pp.113-114
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    • 2006
  • In this paper, dual-gate mixer has been designed and optimized to have variable conversion gain for WiBro and WLAN applications and to save power. With the LO power of 0dBm and RF power of -50dBm, the mixer shows 15dB conversion gain. When RF power increases from -50dBm to -20dBm, the conversion gain decreases to -2dB with bias change. The variable conversion gain can reduce the high dynamic range requirement of AGC burden at IF stage. Also, it can save the dc power dissipation of mixer up to 90%.

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Variable Bias Techniques for High Efficiency Power Amplifier Design (고효율 전력증폭기 설계를 위한 가변 바이어스 기법)

  • Lee, Young-Min;Kim, Kyung-Min;Koo, Kyung-Heon
    • Journal of Advanced Navigation Technology
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    • v.13 no.3
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    • pp.358-364
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    • 2009
  • This paper shows some variable bias techniques which can improve the power added efficiency(PAE) for the designed power amplifier. Some simulations have been done to get the effect of the bias change, and variable bias is adopted to get the higher efficiency for dual mode amplifier which generates two different output power levels. With drain bias change and a fixed gate bias, the amplifier shows PAE improvement compared to the fixed bias amplifier. In addition, this paper analyzed nonlinear distortion of the power amplifier and has used the digital predistortion which can result in 10dB ACPR improvement for the dual band amplifier.

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A Study on the Electrical Characteristic of SCR-based Dual-Directional ESD Protection Circuit According to Change of Design Parameters (SCR 기반 양방향성 ESD보호회로의 설계 변수 변화에 따른 전기적 특성의 관한 연구)

  • Kim, Hyun-Young;Lee, Chung-Kwang;Nam, Jong-Ho;Kwak, Jae-Chang;Koo, Yong-Seo
    • Journal of IKEEE
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    • v.19 no.2
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    • pp.265-270
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    • 2015
  • In this paper, we proposed a dual-directional SCR (silicon-controlled rectifier) based ESD (electrostatic discharge) protection circuit. In comparison with conventional SCR, this ESD protection circuit can provide an effective protection against ESD pulses in the two opposite directions, so the ESD protection circuit can be discharged in two opposite direction. The proposed circuit has a higher holding voltage characteristic than conventional SCR. These characteristic enable to have latch-up immunity under normal operating conditions as well as superior full chip ESD protection. it was analyzed to figure out electrical characteristics in term of individual design parameters. They are investigated by using the Synopsys TCAD simulator. In the simulation results, it has trigger voltage of 6.5V and holding voltage increased with different design parameters. The holding voltage of the proposed circuit changes from 2.1V to 6.3V and the proposed circuit has symmetrical I-V characteristic for positive and negative ESD pulse.

Desing and fabrication of GaAs prescalar IC for frequency synthesizers (주파수 합성기용 GaAs prescalar IC 설계 및 제작)

  • 윤경식;이운진
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.21 no.4
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    • pp.1059-1067
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    • 1996
  • A 128/129 dual-modulus prescalar IC is designed for application to frequency synthesizers in high frequency communication systems. The FET logic used in this design is SCFL(Source Coupled FET Logic), employing depletion-mode 1.mu.m gate length GaAs MESFETs with the threshold voltage of -1.5V. This circuit consists of 8 flip-flops, 3 OR gates, 2 NOR gates, a modulus control buffer and I/O buffers, which are integrated with about 440 GaAs MESFETs on dimensions of 1.8mm. For $V_{DD}$ and $V_{SS}$ power supply voltages 5V and -3.3V Commonly used in TTL and ECL circuits are determined, respectively. The simulation results taking into account the threshold voltage variation of .+-.0.2V and the power supply variation of .+-.1V demonstrate that the designed prescalar can operate up to 2GHz. This prescalar is fabricated using the ETRI MMIC foundary process and the measured maximum operating frquency is 621MHz.

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A 2.4-GHz CMOS Power Amplifier with a Bypass Structure Using Cascode Driver Stage to Improve Efficiency (효율 개선을 위해 캐스코드 구동 증폭단을 활용한 바이패스 구조의 2.4-GHz CMOS 전력 증폭기)

  • Jang, Joseph;Yoo, Jinho;Lee, Milim;Park, Changkun
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.23 no.8
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    • pp.966-974
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    • 2019
  • In this study, we propose a CMOS power amplifier (PA) using a bypass technique to enhance the efficiency in the low-power region. For the bypass structure, the common-gate (CG) transistor of the cascode structure of the driver stage is divided in two parallel branches. One of the CG transistors is designed to drive the power stage for high-power mode. The other CG transistor is designed to bypass the power stage for low-power mode. Owing to a turning-off of the power stage, the power consumption is decreased in low-power mode. The measured maximum output power is 20.35 dBm with a power added efficiency of 12.10%. At a measured output power of 11.52 dBm, the PAE is improved from 1.90% to 7.00% by bypassing the power stage. Based on the measurement results, we verified the functionality of the proposed bypass structure.

Design and Implementation of Dual-Mode SDR Modem Platform (듀얼모드 SDR 모뎀 플랫폼의 설계 및 구현)

  • Yun, Yu-Suk;Choi, Seung-Won
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.33 no.4A
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    • pp.387-393
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    • 2008
  • In this paper, we present an SDR (Software Defined Radio) handset modem platform which supports communication systems such as HSDPA (High Speed Downlink Packet Access), and WiBro (Wireless Broadband Portable Internet). The proposed SDR platform employs DSPs (Digital Signal Processors), FPGAs (Field Programmable Gate Arrays), and microprocessors in such a way that the various communication functions like HSDPA and WiBro can be programmed and downloaded to the hardware platform. The proposed SDR platform can be used for functional verification of the physical layers of the mobile handset system in the mobile communication network. We first demonstrate the receiving structure of the physical layer of the HSDPA and WiBro system. Then, the hardware implementation of the proposed SDR platform is shown with functions and optimized signal flows required at each mode. Finally, the link performance of each mode operating on the proposed SDR platform is presented through the internal loopback tests with the test vectors. The experimental performance has been compared with the computer simulation results.

A dual-path high linear amplifier for carrier aggregation

  • Kang, Dong-Woo;Choi, Jang-Hong
    • ETRI Journal
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    • v.42 no.5
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    • pp.773-780
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    • 2020
  • A 40 nm complementary metal oxide semiconductor carrier-aggregated drive amplifier with high linearity is presented for sub-GHz Internet of Things applications. The proposed drive amplifier consists of two high linear amplifiers, which are composed of five differential cascode cells. Carrier aggregation can be achieved by switching on both the driver amplifiers simultaneously and combining the two independent signals in the current mode. The common gate bias of the cascode cells is selected to maximize the output 1 dB compression point (P1dB) to support high-linear wideband applications, and is used for the local supply voltage of digital circuitry for gain control. The proposed circuit achieved an output P1dB of 10.7 dBm with over 22.8 dBm of output 3rd-order intercept point up to 0.9 GHz and demonstrated a 55 dBc adjacent channel leakage ratio (ACLR) for the 802.11af with -5 dBm channel power. To the best of our knowledge, this is the first demonstration of the wideband carrier-aggregated drive amplifier that achieves the highest ACLR performance.

Optical CBC Block Encryption Method using Free Space Parallel Processing of XOR Operations (XOR 연산의 자유 공간 병렬 처리를 이용한 광학적 CBC 블록 암호화 기법)

  • Gil, Sang Keun
    • Korean Journal of Optics and Photonics
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    • v.24 no.5
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    • pp.262-270
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    • 2013
  • In this paper, we propose a modified optical CBC(Cipher Block Chaining) encryption method using optical XOR logic operations. The proposed method is optically implemented by using dual encoding and a free-space interconnected optical logic gate technique in order to process XOR operations in parallel. Also, we suggest a CBC encryption/decryption optical module which can be fabricated with simple optical architecture. The proposed method makes it possible to encrypt and decrypt vast two-dimensional data very quickly due to the fast optical parallel processing property, and provides more security strength than the conventional electronic CBC algorithm because of the longer security key with the two-dimensional array. Computer simulations show that the proposed method is very effective in CBC encryption processing and can be applied to even ECB(Electronic Code Book) mode and CFB(Cipher Feedback Block) mode.

Robust Design for Parts of Induction Bolt Heating System (유도가열시스템의 구성부품에 대한 강건설계)

  • Kim, Doo Hyun;Kim, Sung Chul;Lee, Jong Ho;Kang, Moon Soo;Jeong, Cheon Kee
    • Journal of the Korean Society of Safety
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    • v.36 no.2
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    • pp.10-17
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    • 2021
  • This paper presents the robust design of each component used in the development of an induction bolt heating system for dismantling the high-temperature high-pressure casing heating bolts of turbines in power plants. The induction bolt heating system comprises seven assemblies, namely AC breaker, AC filter, inverter, transformer, work coil, cable, and CT/PT. For each of these assemblies, the various failure modes are identified by the failure mode and effects analysis (FMEA) method, and the causes and effects of these failure modes are presented. In addition, the risk priority numbers are deduced for the individual parts. To ensure robust design, the insulated-gate bipolar transistor (IGBT), switched-mode power supply (SMPS), C/T (adjusting current), capacitor, and coupling are selected. The IGBT is changed to a field-effect transistor (FET) to enhance the voltage applied to the induction heating system, and a dual-safety device is added to the SMPS. For C/T (adjusting current), the turns ratio is adjusted to ensure an appropriate amount of induced current. The capacitor is replaced by a product with heat resistance and durability; further, coupling with a water-resistant structure is improved such that the connecting parts are not easily destroyed. The ground connection is chosen for management priority.