• 한국농공학회논문집
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• 제52권3호
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• pp.47-55
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• 2010

Investigations on the inundation damage and improvement measures were carried out centering around the protected horticultural complex concentrated in lowlands on the side of Geum river, in Nonsan and Buyeo, Chungnam. Most greenhouses were single-span plastic houses in this area, and tomato, strawberry and watermelon were cultivated mainly. 45.8 % of whole farmhouse were experienced in damage by inundation, and a frequency of the damage was average once in 11 years. The most urgent problem at the greenhouse culture in this area was showed in order of drainage improvement, irrigation water resources and energy saving. Consideration items in drainage improvement project for protected horticulture were showed in order of extending drain pumps, extending drain canals, using concrete flume in drain ditch. It needs to consider systematic plans that can restrain new establishment of greenhouses on the lowland paddy field in drainage area. It is difficult to remove greenhouses which are already established or prohibit cultivation. Therefore we should impose minimum duty items so that greenhouse tillers can cope with inundation. And it is thought that managing agency need to minimize farmers damage by improving drainage ability and introducing maintenance pattern that is different from rice cropping.

• 상하수도학회지
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• 제22권6호
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• pp.681-687
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• 2008

It is well known that the water infiltration rate depends on soil properties such as soil water content, water head, capillary suction, density, hydraulic conductivity, and porosity. However, most of proposed infiltration models assume that the air phase is continuous and in equilibrium with the atmosphere or air compression and air entrapment on infiltration was not considered. This study presents experimental results on unsaturated water infiltration to relate air entrapment and hydraulic conductivity function based on soil air properties. The objectives of this study were to measure change of soil air pressure ahead of wetting front under air drain and air confined condition to find the confined air effect on infiltration rate, to reduce the entrapped air volume related with soil air pressure to increase the soil permeability, and to make a basis of infiltration process model for the purpose of improvement of infiltration rate in the homogeneous soil column. The results of the work show that soil air pressure increases according to increasement of the saturated soil depth rather than the wetting front depth during infiltration process.

• 대한전자공학회논문지
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• 제27권9호
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• pp.1409-1418
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• 1990

Characteristics of NMOS transistors with phosphorus source/drain junctions formed by two-step rapid thermal diffusion (RTD) process using a solid diffusion source have been investigated. Phosphorus profiles after RTD were measured by SIMS analysis. In the case of 1100\ulcorner, 10sec RTD of, P, the specific contact resistance of n+ Si-Al was 2.4x10**-7 \ulcorner-cm\ulcorner which is 1/5 of the As junction The comparison fo P junction devices formed by RTD and conventional As junction devices shows that both short channel effect and hot carrier effect of P junction devices are smaller than those of As junction devices when the devices have same junction depths. P junction device had maximum of 0.4 times lower Isub/Id than As junction device. Characteristics of P junction formed by several different RTD conditions have been compared and 1000\ulcorner RTD sample had the smaller hot carrier generation. Also, it has been shown that the hot carrier generation can be futher reduced by forming the P junctions by 3-step RTD which has RTO-driven-in process additionally.

• 한국정밀공학회지
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• 제31권6호
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• pp.497-504
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• 2014

The digital signage display is actively researched as the next generation of large FPD. To commercialize those digital signage display, the manufacturing cost must be downed with printing method instead of conventional photolithography. Here, we demonstrate a reverse offset printed TFT electrodes for the digital signage display. For the fabricated source/drain and gate electrode, we used Ag ink, silicone blanket, Clich$\acute{e}$ and reverse offset printer. We printed uniform TFT electrode patterns with narrow line width(10 ${\mu}m$ range) and thin thickness(nm range). In the end the printing source/drain and gate electrode are successfully achieved by optimization of experimental conditions such as Clich$\acute{e}$ surface treatment, ink coating process, delay time, off/set process and curing temperature. Also, we checked that the printing align accuracy was within 5 ${\mu}m$.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권3호
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• pp.173-181
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• 2005

A new two dimensional (2-D) model for the potential distribution of fully depleted short-channel ion-implanted silicon MESFET's has been presented in this paper. The solution of the 2-D Poisson's equation has been considered as the superposition of the solutions of 1-D Poisson's equation in the lateral direction and the 2-D homogeneous Laplace equation with suitable boundary conditions. The minimum bottom potential at the interface of the depletion region due to the metal-semiconductor junction at the Schottky gate and depletion region due to the substrate-channel junction has been used to investigate the drain-induced barrier lowering (DIBL) and its effects on the threshold voltage of the device. Numerical results have been presented for the potential distribution and threshold voltage for different parameters such as the channel length, drain-source voltage, and implanted-dose and silicon film thickness.

• 한국위성정보통신학회논문지
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• 제8권2호
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• pp.36-43
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• 2013

본 논문에서는 고전압에서 동작하는 DDIC(display driver IC) 칩의 정전기 보호소자로 사용되는 GG_EDNMOS 소자의 고전류 특성 및 더블 스냅백 메커니즘이 분석되었다. 이온주입 조건을 달리하는 매트릭스 조합에 의한 수차례의 2차원 시뮬레이션 및 TLP 특성 데이타를 비교한 결과, BJT 트리거링 후에 더블 스냅백 현상이 나타났으나 웰(well) 및 드리프트(drift) 이온주입 조건을 적절히 조절함으로써 안정적인 ESD 보호성능을 얻을 수 있었다. 즉, 최적의 백그라운드 캐리어 밀도를 얻는 것이 고전압 동작용 정전기보호소자의 고전류 특성에 매우 중요한 영향을 주는 임계인자(critical factor)임을 알 수 있었다.

• 한국지반공학회논문집
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• 제21권10호
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• pp.41-48
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• 2005

수평배수재가 설치된 준설매립지반의 중력에 의한 압밀 거동을 수평배수 자중압밀해석을 위하여 개발된 유한차분 프로그램을 이용하여 해석하였다. 수평배수재 단면의 크기와 수평배수재의 설치단면의 방향(수직/수평)이 대상지반의 압밀에 미치는 영향을 분석하였다. 또한 시공된 지반에서 발생 가능한 요인들, 즉 하부 무처리층의 존재, 그리고 수평배수재 단부에서의 수두적체 등이 압밀속도와 침하량에 미치는 영향도 분석하였다. 그 결과, 수평배수재의 단면적을 2배로 증가하여도 압밀 소요시간이 미량 감소하는데 그쳤으나, 수평배수재를 수직방향으로 설치한 경우 수평방향 설치시에 비하여 압밀소요 시간이 매우 감소하는 것으로 평가되었다. 해석결과로 부터 하부 무처리층의 영향이 처리 지반의 장기 침하에 미치는 영향이 크며, 배수재 단부에 발생하는 수두적체는 압밀시간 증가와 미진한 압밀효과를 초래하는 것을 정량적으로 알 수 있었다.

• 한국전기전자재료학회논문지
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• 제37권1호
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• pp.48-55
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• 2024

The changes in threshold voltage and DIBL were investigated for changes in remanent polarization P_r and coercive field E_c, which determine the characteristics of the P-E hysteresis curve of ferroelectric in NCFET (negative capacitance FET). The threshold voltage and DIBL (drain-induced barrier lowering) were observed for a junctionless double gate MOSFET using a gate oxide structure of MFMIS (metal-ferroelectric-metal-insulator-semiconductor). To obtain the threshold voltage, series-type potential distribution and second derivative method were used. As a result, it can be seen that the threshold voltage increases when P_r decreases and E_c increases, and the threshold voltage is also maintained constant when the P_r/E_c is constant. However, as the drain voltage increases, the threshold voltage changes significantly according to P_r/E_c, so the DIBL greatly changes for P_r/E_c. In other words, when P_r/E_c=15 pF/cm, DIBL showed a negative value regardless of the channel length under the conditions of ferroelectric thickness of 10 nm and SiO₂ thickness of 1 nm. The DIBL value was in the negative or positive range for the channel length when the P_r/E_c is 25 pF/cm or more under the same conditions, so the condition of DIBL=0 could be obtained. As such, the optimal condition to reduce short channel effects can be obtained since the threshold voltage and DIBL can be adjusted according to the device dimension of NCFET and the P_r and E_c of ferroelectric.

• 한국터널지하공간학회 논문집
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• 제10권1호
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• pp.37-47
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• 2008

터널 설계 및 시공시 지하수 영향에 대한 정확한 이해가 필요하며, 이를 위해 터널 주변의 흐름거동을 파악하는 것이 중요하다. 본 연구에서는 지하수 아래 건설된 배수형 천층터널에 대한 모형실험을 실시하여 주변 지하수 흐름조건과 지반의 토피고에 따른 터널 주변의 지하수 흐름거동을 조사하였다. 실험결과 정상류/부정류의 지하수 흐름조건은 터널내 유입량이나 도달시간에는 영향을 미칠 수 있으나, 터널 주변 흐름거동에는 큰 영향을 미치지 못함을 확인할 수 있었다. 또, 토피고가 증가할수록 배수공이 위치한 터널 하부로의 유선 집중현상이 뚜렷하게 관찰되었다. 모형실험에 대한 수치해석결과, 배수형 천층터널 주변의 흐름거동을 수치해석으로도 재현 가능함을 확인하였다. 배수형 천층터널의 경우 수리경계조건이 터널주면 유출이 아닌 배수공 유출로 모사하는 것이 보다 타당함을 보였다.

• 한국전기전자재료학회논문지
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• 제19권1호
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• pp.1-6
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• 2006

High performance $Si_{0.8}Ge_{0.2}$ heterostructure metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated using well-controlled delta-doping of boron and $Si_{0.8}Ge_{0.2}$/Si heterostructure epitaxal layers grown by reduced pressure chemical vapor deposition. In this paper, we report 1/f noise characteristics of the SiGe pMOSFETs measured under various bias conditions of the gate and drain voltages changing in linear operation regions. From the noise spectral density, we found that the gate and drain voltage dependence of the noise represented same features, as usually scaled with $f^{-1}$ However, 1/f noise was found to be much lower in the device with boron delta-doped layer, by a factor of $10^{-1}_10^{-2}$ in comparison with the device fabricated without delta-doped layer. 1/f noise property of delta-doped device looks important because the device may replace bipolar transistors most commonly embedded in high-frequency oscillator circuits.