• Journal of the Earthquake Engineering Society of Korea
• /
• v.10 no.6 s.52
• /
• pp.133-135
• /
• 2006

We propose and fabricate a novel fiber optic sensor for the detection of abnormal structural signals from various constructions. It's advantages are highly sensitive. small in dimension and electro-magnetic immune. Since this sensor was simply constructed with a single-mode fiber at infra-red wavelength and a laser-diode with the wavelength of 625 nm, the modes in the end of the optical fiber were not show as Gaussian distributed. So, we used the change of the mode distribution to get the sensor output by the external abnormal effect of structures. We investigated the resonance by performing the bending test of an aluminum beam attached with the fiber sensor. In the test, we could obtained a feasible signal to sense the abnormal condition of structures.

• Korean Journal of Optics and Photonics
• /
• v.26 no.3
• /
• pp.168-171
• /
• 2015

The heat flow characteristics of a high-power optical semiconductor source have been analyzed using a 3D CFD commercial tool, and the thermal resistance values for each of the layers revealed the places for thermal bottlenecks to be improved. As the heat source of a LD (Laser Diode) has a small volume and a narrow surface, the effective thermal cross-sectional area near it is also quite small. It was possible to expand the cross-sectional area effectively by using graphene layers on the TIM (Thermal Interface Material) layers of a LD chip. The effective values of heat resistance for the layers are compared to confirm the improvement effect of the graphene layers before and after, which can be considered to expand the thermal cross section of the heat transfer path.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.42 no.12
• /
• pp.19-26
• /
• 2005

We have studied the relationship between static mode behavior and dynamic characteristics of multiple transverse-mode VCSELs by measuring the modal L-I and I-V characteristics. Dependence of the resonance frequencies of RIN (relative intensity noise) spectra on the injection current can be understood by modal L-I characteristics and mode-coupling effects. Each transverse mode behaves as an independent diode laser with the different threshold current in large active-area VCSELs, and the multiple-step turn-on is observed when step-current input is applied. This multiple-step turn-on is a result of different turn-on delay times of the transverse modes. Since the multiple-step turn-on increases the rise-time significantly, the wide active-area VCSELs are not suitable for high-speed optical transmitters unless the input current is adjusted for single transverse-mode operation.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.41 no.1
• /
• pp.29-34
• /
• 2004

We present the first demonstration of waveguide-type depleted optical thyristor laser diode with InGaAs/InGaAsP multiple quantum well structure. The measured switching voltage and current are 4.63 V and 10uA respectively. The holding voltage and current are respectively 0.59 V, 20uA. The lasing threshold current at the temperature of $25^{\circ}C$ and $10^{\circ}C$ are 111 mAA and 72.5 mA, respectively. The lasing wavelength is centered at 1.561um at a bias current equal to 1.41 times threshold.

• Journal of the Korean Ceramic Society
• /
• v.45 no.9
• /
• pp.524-530
• /
• 2008

Anti-Reflective (AR) thin film coatings of $SiO_2$ (n= 1.48) and $TiO_2$ (n=2.17) were deposited by ion-beam assisted deposition (IBAD) with End-Hall ion source and conventional electron beam (e-beam) evaporation to investigate the effect of deposition method on the refractive indicies (n) of the fIlms. Green-light generation using a GaAs laser diode was achieved via excitation of the second harmonic. The latter resulted from the transmission of the fundamental guided-mode wave of 1064 nm through periodically poled $LiNbO_3$. Large differences in the refractive indicies of each of the layers in the multilayer coating may improve AR performance. IBAD of $SiO_2$ reduced its refractive index from 1.45 to 1.34 at 1064 nm. Conversely, e-beam evaporation of $TiO_2$ increased its refractive index from 1.80 to 2.11. In addition, no fluctuations in absorption at the wavelength of 1064 nm were found. The results suggest that films prepared by different deposition methods can increase the effectiveness of multilayer AR coatings.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.134-134
• /
• 2009

In this work, we report that crystallization speed as well as the electrical and optical properties about the N-doped $Ge_2Sb_2Te_5$ thin films. The 200-nm-thick N-doped $Ge_2Sb_2Te_5$ thin film was deposited on p-type (100) Si and glass substrate by RF reactive sputtering at room temperature. The amorphous-to-crystalline phase transformation of N-doped $Ge_2Sb_2Te_5$ thin films investigated by X-ray diffraction (XRD). Changes in the optical transmittance of as-deposited and annealed films were measured using a UV-VIS-IR spectrophotometer and four-point probe was used to measure the sheet resistance of N-doped $Ge_2Sb_2Te_5$ thin films annealed at different temperature. In addition, the surface morphology and roughness of the films were observed by Atomic Force Microscope (AFM). The crystalline speed of amorphous N-doped $Ge_2Sb_2Te_5$ films were measured by using nano-pulse scanner with 658 nm laser diode (power : 1~17 mW, pulse duration: 10~460 ns). It was found that the crystalline speed of thin films are decreased by adding N and the crystalline temperature is higher. This means that N-dopant in $Ge_2Sb_2Te_5$ thin film plays a role to suppress amorphous-to-crystalline phase transformation.

• Journal of the Microelectronics and Packaging Society
• /
• v.11 no.3 s.32
• /
• pp.83-89
• /
• 2004

NTC thermistor embedded miniature thermoelectric module was fabricated for the precise temperature control of optical communication device such as laser diode (LD). The miniature thermoelectric module ($7.2 mm{\times}9 mm{\times}2.2 mm$) consists of 21 BiTe thermoelectric couples, the operating temperature is precisely controlled by embedded thermistor with quick response. The figure-of-merit (Z), maximum temperature difference (${\Delta}T_{max}$), maximum cooling capacity ($Q_{max}$) of the miniature thermoelectric module were $2.5{\times}10^{-3}$/K, 72 K, 2.2 W respectively and temperature could be controlled in range of ${\pm}0.1^{\circ}C$ accuracy in air. The fabricated miniature thermoelectric module is suitable for applications of the optical communication packaging.

• Journal of Periodontal and Implant Science
• /
• v.45 no.2
• /
• pp.38-45
• /
• 2015

Purpose: The purpose of this study was to evaluate the effect of photodynamic therapy (PDT) using erythrosine and a green light emitting diode (LED) light source on biofilms of Aggregatibacter actinomycetemcomitans attached to resorbable blasted media (RBM) and sandblasted, large-grit, acid-etched (SLA) titanium surfaces in vitro. Methods: RBM and SLA disks were subdivided into four groups, including one control group and three test groups (referred to as E0, E30, E60), in order to evaluate the effect of PDT on each surface. The E0 group was put into $500{\mu}L$ of $20{\mu}M$ erythrosine for 60 seconds without irradiation, the E30 group was put into erythrosine for 60 seconds and was then irradiated with a LED for 30 seconds, and the E60 group was put into erythrosine for 60 seconds and then irradiated with a LED for 60 seconds. After PDT, sonication was performed in order to detach the bacteria, the plates were incubated under anaerobic conditions on brucella blood agar plates for 72 hours at $37^{\circ}C$, and the number of colony-forming units (CFUs) was determined. Results: Significant differences were found between the control group and the E30 and E60 groups (P<0.05). A significantly lower quantity of CFU/mL was found in the E30 and E60 groups on both titanium disk surfaces. In confocal scanning laser microscopy images, increased bacterial death was observed when disks were irradiated for a longer period of time. Conclusions: These findings suggest that PDT using erythrosine and a green LED is effective in reducing the viability of A. actinomycetemcomitans attached to surface-modified titanium in vitro.

• Publications of The Korean Astronomical Society
• /
• v.28 no.3
• /
• pp.95-100
• /
• 2013

A fiber-optic reference signal transmission system, which transmits the 1.4 GHz reference signal from H-maser to receiver cabin in radio telescopes, was adopted for compensating the phase changes due to temperature variation and antenna movement. At the first experiment, the remote signal's phase changed more than 15 degrees at 1.4 GHz. We found unstable components in sub-system experiments and replaced them. The main cause of unstable phase stability was the unaligned polarization axis between Laser Diode and Mach-Zehnder Modulator (MZM). The improved system stability showed $1{\times}10^{-16}$ allan standard deviation at 1,000 sec integration time with the antenna fixed. When the antenna moves in the azimuth axis, the 1.4 GHz remote signal showed the phase change smaller than 0.2 degrees.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.7
• /
• pp.629-637
• /
• 2008

We report several experimental data capable of evaluating the amorphous-to-crystalline (a-c) phase transformation in $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ (x = 0, 0.05, 0.1) thin films prepared by a thermal evaporation. The isothermal a-c structural phase changes were evaluated by XRD, and the optical transmittance was measured in the wavelength range of $800{\sim}3000$ nm using a UV-vis-IR spectrophotometer. A speed of the a-c transition was evaluated by detecting the reflection response signals using a nano-pulse scanner with 658 nm laser diode (power P = $1{\sim}17$ mW, pulse duration t = $10{\sim}460$ ns). The surface morphology and roughness of the films were imaged by AFM. It was found that the crystallization speed was so enhanced with an increase of Ag content. While the sheet resistance of c-phase $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ was similar to that of c-phase $Ge_2Sb_2Te_5$ (i.e., $R_c{\sim}10{\Omega}/{\square}$), the sheet resistance of a-phase $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ was found to be lager than that of a-phase $Ge_2Sb_2Te_5$, $R_a{\sim}5{\times}10^6{\Omega}{/\square}$. For example, the ratios of $R_a/R_c$ for $Ge_2Sb_2Te_5$ and $(Ag)_{0.1}(Ge_2Sb_2Te_5)_{0.9}$ were approximately $5{\times}10^5$ and $5{\times}10^6$, respectively.