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Lasing Characteristics of MQW Waveguide-type Depleted Optical Thristor Operating at 1.561um  

Choi Woon Kyung (of Optoelectronics and Optical Communications, Chung-Ang University)
Kim Doo-Gun (of Optoelectronics and Optical Communications, Chung-Ang University)
Choi Young-Wan (of Optoelectronics and Optical Communications, Chung-Ang University)
Lee Seok (shotonics vesearch center, KIST)
Woo Deok-Ha (shotonics vesearch center, KIST)
Kim Sun-Ho (shotonics vesearch center, KIST)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.41, no.1, 2004 , pp. 29-34 More about this Journal
Abstract
We present the first demonstration of waveguide-type depleted optical thyristor laser diode with InGaAs/InGaAsP multiple quantum well structure. The measured switching voltage and current are 4.63 V and 10uA respectively. The holding voltage and current are respectively 0.59 V, 20uA. The lasing threshold current at the temperature of $25^{\circ}C$ and $10^{\circ}C$ are 111 mAA and 72.5 mA, respectively. The lasing wavelength is centered at 1.561um at a bias current equal to 1.41 times threshold.
Keywords
depleted optical thyristor; optical hard-limiter; code division multiple access;
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