• 제목/요약/키워드: differential voltage controlled oscillator

검색결과 49건 처리시간 0.033초

A 2.4 GHz CMOS LC VCO with Phase Noise Optimization

  • Yan, Wen-Hao;Park, Chan-Hyeong
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2008년도 하계종합학술대회
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    • pp.413-414
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    • 2008
  • A 2.4 GHz low phase noise fully integrated LC voltage-controlled oscillator (VCO) in $0.18\;{\mu}m$ CMOS technology is presented in this paper. The VCO is optimized based on phase noise reduction. The design of the VCO uses differential varactors which are adopted for symmetry of the circuit, and consider AM-PM conversion due to a cross-coupled pair. The VCO is designed to draw 3 mA from 1.8 V supply voltage. Simulated phase noise is -137.3 dBc/Hz at 3 MHz offset. The tuning range is found to be 300 MHz range from 2.3 GHz to 2.6 GHz.

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A 12-bit Hybrid Digital Pulse Width Modulator

  • Lu, Jing;Lee, Ho Joon;Kim, Yong-Bin;Kim, Kyung Ki
    • 한국산업정보학회논문지
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    • 제20권1호
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    • pp.1-7
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    • 2015
  • In this paper, a 12-bit high resolution, power and area efficiency hybrid digital pulse width modulator (DPWM) with process and temperature (PT) calibration has been proposed for digital controlled DC-DC converters. The hybrid structure of DPWM combines a 6-bit differential tapped delay line ring-mux digital-to-time converter (DTC) schema and a 6-bit counter-comparator DTC schema, resulting in a power and area saving solution. Furthermore, since the 6-bit differential delay line ring oscillator serves as the clock to the high 6-bit counter-comparator DTC, a high frequency clock is eliminated, and the power is significantly saved. In order to have a simple delay cell and flexible delay time controllability, a voltage controlled inverter is adopted to build the deferential delay cell, which allows fine-tuning of the delay time. The PT calibration circuit is composed of process and temperature monitors, two 2-bit flash ADCs and a lookup table. The monitor circuits sense the PT (Process and Temperature) variations, and the flash ADC converts the data into a digital code. The complete circuits design has been verified under different corners of CMOS 0.18um process technology node.

An On-Chip Differential Inductor and Its Use to RF VCO for 2 GHz Applications

  • Cho, Je-Kwang;Nah, Kyung-Suc;Park, Byeong-Ha
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제4권2호
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    • pp.83-87
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    • 2004
  • Phase noise performance and current consumption of Radio Frequency (RF) Voltage-Controlled Oscillator (VCO) are largely dependent on the Quality (Q) factor of inductor-capacitor (LC) tank. Because the Q-factor of LC tank is determined by on-chip spiral inductor, we designed, analyzed, and modeled on-chip differential inductor to enhance differential Q-factor, reduce current consumption and save silicon area. The simulated inductance is 3.3 nH and Q-factor is 15 at 2 GHz. Self-resonance frequency is as high as 13 GHz. To verify its use to RF applications, we designed 2 GHz differential LC VCO. The measurement result of phase noise is -112 dBc/Hz at an offset frequency of 100 kHz from a 2GHz carrier frequency. Tuning range is about 500 MHz (25%), and current consumption varies from 5mA to 8.4 mA using bias control technique. Implemented in $0.35-{\mu}m$ SiGe BiCMOS technology, the VCO occupies $400\;um{\times}800\;um$ of silicon area.

A 5-GHz Band CCNF VCO Having Phase Noise of -87 dBc/Hz at 10 kHz Offset

  • Lee, Ja-Yol;Lee, Sang-Heung;Kang, Jin-Young;Kim, Bo-Woo;Oh, Seung-Hyeub
    • Journal of electromagnetic engineering and science
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    • 제4권3호
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    • pp.137-142
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    • 2004
  • In this paper, we present a new current-current negative feedback(CCNF) differential voltage-controlled oscillator (VCO) with 1/f induced low-frequency noise suppressed. By means of the CCNF, the 1/f induced low-frequency noise is removed from the proposed CCNF VCO. Also, high-frequency noise is stopped from being down-converted into phase noise by means of the increased output impedance through the CCNF and the feedback capacitor $C_f. The proposed CCNF VCO represents 11-dB reduction in phase noise at 10 kHz offset, compared with the conventional differential VCO. The phase noise of the proposed CCNF VCO is measured as - 87 dBc/Hz at 10 kHz offset frequency from 5.5-GHz carrier. The proposed CCNF VCO consumes 14.0 mA at 2.0 V supply voltage, and shows single-ended output power of - 12 dBm.

PLL을 이용한 고속 마이크로프로세서용 32MHz~1GHz 광대역 클럭발생회로 (A PLL Based 32MHz~1GHz Wide Band Clock Generator Circuit for High Speed Microprocessors)

  • 김상규;이재형;이수형;정강민
    • 한국정보처리학회논문지
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    • 제7권1호
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    • pp.235-244
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    • 2000
  • 본 연구에서 PLL을 이용한 고속 마이크로프로세서용 클럭발생회로를 설계하였다. 이 회로는 32MHz${\sim}$1GHz 클럭을 발생시키며 마이크로프로세서내에 내장될 수 있다. 동적 차동래치를 사용하여 고속 D Flip-Flop을 설게하였고 이에 의거한 새로운 형태의 위상주파수 검출기를 제시하였다. 이 검출기는 위상민감도오차가 매우 적으며 이를 사용한 PLL은 위상오차가 적은 우수한 위상특성을 지닌다. 또한 전압제어발진기 VCO의 선형적 제어를 위하여 전압-전류 변환기가 구동하는 전류제어 발진기로 구성된 새로운 구조의 VCO를 제시하였다. 이러한 PLL에서 제어전압 범위를 1V${\sim}$5V로 넓히고 발생클럭의 주파수를 32 MHz${\sim}$1 GHz로 증가시킬 수 있었다. 클럭발생회로는 $0.65\;{\mu}m$ CMOS 기술을 이용하여 설계하였다. 이 회로는 $1.1\;{\mu}s$의 lock-in 시간과 20mW 이하의 전력소비를 갖는다.

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바이쿼드 RC 필터의 자가 발진을 이용한 필터 교정 (Filter Calibration using Self Oscillation of Biquad RC Filter)

  • 안덕기;황인철
    • 전기학회논문지
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    • 제59권5호
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    • pp.1005-1009
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    • 2010
  • This paper presents a digitally-controlled filter calibration technique for biquad RC filter using self oscillation. The biquad RC filter is converted to a fully-differential ring oscillator by changing its resistor connections, where the oscillation frequency reflects the cut-off frequency. The proposed calibration circuit measures the oscillation frequency by counting with a fixed higher-frequency clock and then tunes it to a desired frequency with a digital frequency-locked loop including a PI controller. Because the proposed circuit directly measures the cut-off frequency of the filter itself and calibrates it with the small area digital circuits, the area and the power consumption are much small compared with conventional works. When it is implemented in a 65nm CMOS process, the calibration circuit except the filter consumes the area of 80um X 50um and power consumption is 443uA at 1.2 V supply voltage.

10 GHz 대역 LC-CMOS QVCO (A 10-GHz Band LC-CMOS QVCO)

  • 구광회;김창우
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2008년도 하계종합학술대회
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    • pp.417-418
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    • 2008
  • A quadrature voltage controlled oscillator(QVCO) with MOS-varactors has been fabricated for X-band applications. The QVCO consists of two cross -coupled differential cores and buffer amplifiers, which has fabricated in TSMC $0.18{\mu}m$ CMOS process. The QVCO exhibits a frequency tuning range from 8.38 GHz to 10.62 GHz. The phase noise is -88 dBc/Hz at 1 MHz-offset frequency. The total bias current is 25 mA including four buffer amplifiers.

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A 3.1 to 5 GHz CMOS Transceiver for DS-UWB Systems

  • Park, Bong-Hyuk;Lee, Kyung-Ai;Hong, Song-Cheol;Choi, Sang-Sung
    • ETRI Journal
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    • 제29권4호
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    • pp.421-429
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    • 2007
  • This paper presents a direct-conversion CMOS transceiver for fully digital DS-UWB systems. The transceiver includes all of the radio building blocks, such as a T/R switch, a low noise amplifier, an I/Q demodulator, a low pass filter, a variable gain amplifier as a receiver, the same receiver blocks as a transmitter including a phase-locked loop (PLL), and a voltage controlled oscillator (VCO). A single-ended-to-differential converter is implemented in the down-conversion mixer and a differential-to-single-ended converter is implemented in the driver amplifier stage. The chip is fabricated on a 9.0 $mm^2$ die using standard 0.18 ${\mu}m$ CMOS technology and a 64-pin MicroLead Frame package. Experimental results show the total current consumption is 143 mA including the PLL and VCO. The chip has a 3.5 dB receiver gain flatness at the 660 MHz bandwidth. These results indicate that the architecture and circuits are adaptable to the implementation of a wideband, low-power, and high-speed wireless personal area network.

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Ku-밴드 광대역 CMOS 전압 제어 발진기 (A Fully Integrated Ku-band CMOS VCO with Wide Frequency Tuning)

  • 김영기;황재연;윤종덕
    • 전자공학회논문지
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    • 제51권12호
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    • pp.83-89
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    • 2014
  • 본 논문에서는 상호 교차결합 차동(complementary cross-coupled differential)구조를 기반으로 조절 주파수 범위가 넓은 광대역 Ku-band 전압 제어 발진기를 $0.18-{\mu}m$ CMOS 공정 기술을 바탕으로 설계 후 제작하여 주파수 조절 범위와 출력 스펙트럼, 위상잡음 등을 측정하여 분석하였다. PMOS와 NMOS가 캐스코드의 push-pull 구조로 연결되어 상호 교차된 차동발진기 구조에 주파수 제어용으로 MOS varactor를 사용한 본 전압 제어 발진기는 발진주파수 14.5GHz의 20%인 2.24GHz 의 매우 넓은 광대역의 주파수 제어를 달성하였음을 측정으로 확인하였다. 3.3V 전원으로부터 18mA의 DC 전류를 공급하였을 때 발진 출력전력은 -1.66dBm으로 측정되었으며, 5V 전원으로부터 47mA의 DC 전류를 공급하였을 때 발진 출력전력은 0.84dBm으로 측정되었다. 위상잡음은 100kHz offset 주파수에서 -74.5dBc/Hz로 측정되었다. 본 논문의 칩은 패드를 포함하여 $1.02mm{\times}0.66mm$의 면적을 갖는다.

A 12 mW ADPLL Based G/FSK Transmitter for Smart Utility Network in 0.18 ㎛ CMOS

  • Park, Hyung-Gu;Kim, Hongjin;Lee, Dong-Soo;Yu, Chang-Zhi;Ku, Hyunchul;Lee, Kang-Yoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제13권4호
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    • pp.272-281
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    • 2013
  • This paper presents low power frequency shift keying (FSK) transmitter using all digital PLL (ADPLL) for smart utility network (SUN). In order to operate at low-power and to integrate a small die area, the ADPLL is adopted in transmitter. The phase noise of the ADPLL is improved by using a fine resolution time to digital converter (TDC) and digitally controlled oscillator (DCO). The FSK transmitter is implemented in $0.18{\mu}m$ 1-poly 6-metal CMOS technology. The die area of the transmitter including ADPLL is $3.5mm^2$. The power consumption of the ADPLL is 12.43 mW. And, the power consumptions of the transmitter are 35.36 mW and 65.57 mW when the output power levels are -1.6 dBm and +12 dBm, respectively. Both of them are supplied by 1.8 V voltage source. The frequency resolution of the TDC is 2.7 ps. The effective DCO frequency resolution with the differential MOS varactor and sigma-delta modulator is 2.5 Hz. The phase noise of the ADPLL output at 1.8 GHz is -121.17 dBc/Hz with a 1 MHz offset.