• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.465-468
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• 2004

In this paper, we describe the design and implementation of the new current-current negative feedback (CCNF) voltage-controlled oscillator (VCO), which suppresses 1/f induced low-frequency noise. By means of the CCNF, the high-frequency noise as well as the low-frequency noise is prevented from being converted into phase noise. The proposed CCNF VCO shows 11-dB reduction in phase noise at 10 kHz offset, compared with the conventional differential VCO. The phase noise of the proposed VCO is -87 dBc/Hz at 10 kHz offset frequency from 5.5-GHz carrier. The proposed VCO consumes 14.0 mA at 2.0 V supply voltage, and shows single-ended output power of -12.0 dBm.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.5
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• pp.470-475
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• 2015

This paper presents a wideband Current-Reused Voltage Controlled Oscillator (VCO) with 2-Step Automatic Amplitude Calibration (AAC). Tuning range of the proposed VCO is from 1.95 GHz to 3.15 GHz. The mismatch of differential voltage is within 0.6 %. At 2.423 GHz, the phase noise is -116.3 dBc/Hz at the 1 MHz offset frequency with the current consumption of 2.6 mA. The VCO is implemented $0.13{\mu}m$ CMOS technology. The layout size is $720{\times}580{\mu}m^2$.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.46 no.2
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• pp.72-77
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• 2009

In this paper, a 3.2Gb/s clock and data recovery (CDR) circuit for a high-speed serial data communication without the reference clock is described This CDR circuit consists of 5 parts as Phase and frequency detector(PD and FD), multi-phase Voltage Controlled-Oscillator(VCO), Charge-pumps (CP) and external Loop-Filter(KF). It is adapted the PD and FD, which incorporates a half-rate bang-bang type oversampling PD and a half-rate FD that can improve pull-in range. The VCO consists of four fully differential delay cells with rail-to-rail current bias scheme that can increase the tuning range and tuning linearity. Each delay cell has output buffers as a full-swing generator and a duty-cycle mismatch compensation. This materialized CDR can achieve wide pull-in range without an extra reference clock and it can be also reduced chip area and power consumption effectively because there is no additional Phase Locked- Loop(PLL) for generating reference clock. The CDR circuit was designed for fabrication using 0.18um 1P6M CMOS process and total chip area excepted LF is $1{\times}1mm^2$. The pk-pk jitter of recovered clock is 26ps at 3.2Gb/s input data rate and total power consumes 63mW from 1.8V supply voltage according to simulation results. According to test result, the pk-pk jitter of recovered clock is 55ps at the same input data-rate and the reliable range of input data-rate is about from 2.4Gb/s to 3.4Gb/s.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.2
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• pp.408-414
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• 2014

This paper proposes a charge-pump phase-locked loop (PLL) with 51-phase output clock of a 125 MHz target frequency. The proposed PLL uses three voltage controlled oscillators (VCOs) to generate 51-phase clock and increase of maximum operating frequency. The 17 delay-cells consists of each VCO, and a resistor averaging scheme which reduces the phase mismatch among 51-phase clock combines three VCOs. The proposed PLL uses a 65 nm 1-poly 9-metal CMOS process with 1.0 V supply. The simulated peak-to-peak 지터 of output clock is 0.82 ps at an operating frequency of 125 MHz. The differential non-linearity (DNL) and integral non-linearity (INL) of the 51-phase output clock are -0.013/+0.012 LSB and -0.033/+0.041 LSB, respectively. The operating frequency range is 15 to 210 MHz. The area and power consumption of the implemented PLL are $580{\times}160{\mu}m^2$ and 3.48 mW, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.8
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• pp.964-969
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• 2007

A regulated low phase noise differential colpitts VCO(Voltage Controlled Oscillator) for mobile RFID system is presented. The differential colpitts VCO meets the dense reader environment specifications. The VCO use a $0.35{\mu}m$ technology and achieves tuning range $1.55{sim}2.053 GHz$. Measuring 910 MHz frequency divider output, phase noise performance is -106 dBcMz and -135dBc/Hz at 40 kHz and 1MHz offset, respectively. 5-bit digital coarse-tuning and accumulation type MOS varactors allow for 28.2% tuning range, which is required to cover the LO frequency range of a UHF Mobile RFID system, Optimum design techniques ensure low VCO gain(<45 MHz/V) for good interoperability with the frequency synthesizer. To the author' knowledge, this differential colpitts VCO achieves a figure of merit(FOM) of 1.93dB at 2-GHz band.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.11
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• pp.94-100
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• 2014

In this paper, a design of low power Current-Reuse Voltage Controlled Oscillator (VCO) which has wide tuning range about 1.95 GHz ~ 3.15 GHz is presented. Class-C type is applied to improve phase noise and 2-Step Auto Amplitude Calibration (AAC) is used for minimizing the imbalance of differential VCO output voltage which is main issue of Current-Reuse VCO. The mismatch of differential VCO output voltage is presented about 1.5mV ~ 4.5mV. This mismatch is within 0.6 % compared with VCO output voltage. Proposed Current-Reuse VCO is designed using CMOS $0.13{\mu}m$ process. Supply voltage is 1.2 V and current consumption is 2.6 mA at center frequency. The phase noise is -116.267 dBc/Hz at 2.3GHz VCO frequency at 1MHz offset. The layout size is $720{\times}580{\mu}m^2$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.154-161
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• 2006

This paper describes the new types of ngative differential resistance (NDR) IC applications which use a monolithic quantum-effect device technology based on the RTD/HBT heterostructure design. As a digital IC, a low-power/high-speed MOBILE (MOnostable-BIstable transition Logic Element)-based D-flip flop IC operating in a non-return-to-zero (NRZ) mode is proposed and developed. The fabricated NRZ MOBILE D-flip flop shows high speed operation up to 34 Gb/s which is the highest speed to our knowledge as a MOBILE NRZ D-flip flop, implemented by the RTD/HBT technology. As an analog IC, a 14.75 GHz RTD/HBT differential-mode voltage-controlled oscillator (VCO) with extremely low power consumption and good phase noise characteristics is designed and fabricated. The VCO shows the low dc power consumption of 0.62 mW and good F.O.M of -185 dBc/Hz. Moreover, a high-speed CML-type multi-functional logic, which operates different logic function such as inverter, NAND, NOR, AND and OR in a circuit, is proposed and designed. The operation of the proposed CML-type multi-functional logic gate is simulated up to 30 Gb/s. These results indicate the potential of the RTD based ICs for high speed digital/analog applications.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.12 s.91
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• pp.1184-1189
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• 2004

A new schematic of quadrature voltage controlled oscillator(QVCO) is designed and fabricated. To obtain quadrature characteristic and low phase noise simultaneously, two differential VCOs are forced to un in quadrature mode by using coupling amplifier with a source degeneration resistor, which is optimized to obtain quadrature accuracy with minimum phase noise degradation. The designed QVCO was fabricated in standard CMOS technology. The measured performance showed the phase noise of below -120 dBc/Hz at 1 MHEz frequency offset, tuning bandwidth of 210 MHz from 2.34 GHz to 2.55 GHz with a tuning voltage varying form 0 to 1.8 V Quadrature error of 0.5 degree and amplitude error of 0.2 dB was measured with conjunction with low-lF mixer. The fabricated QVCO requires 19 mA including 5 mA in the VCO core part fiom a 1.8 V supply.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.11
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• pp.13-22
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• 2010

This paper proposed the dual-loops multiphase DLL based mixed VCO/VCDL for a high frequency phase noise suppression of the input clock and the multiple frequencies generation with a precise duty cycle. In the proposed architecture, the dual-loops DLL uses the dual input differential buffer based nMOS source-coupled pairs at the input stage of the mixed VCO/VCDL. This can easily convert the input and output phase transfer of the conventional DLL with bypass pass filter characteristic to the input and output phase transfer of PLL with low pass filter characteristic for the high frequency input phase noise suppression. Also, the proposed DLL can correct the duty-cycle error of multiple frequencies by using only the duty-cycle correction circuits and the phase tracking loop without additional correction controlled loop. At the simulation result with $0.18{\mu}m$ CMOS technology, the output phase noise of the proposed DLL is improved under -13dB for 1GHz input clock with 800MHz input phase noise. Also, at 1GHz operating frequency with 40%~60% duty-cycle error, the duty-cycle error of the multiple frequencies is corrected under $50{\pm}1%$ at 2GHz the input clock.