• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.1
• /
• pp.53-60
• /
• 2009

$ZrTiO_4$ dielectric thin films were coated by metal-organic decomposition, and annealed by rapid thermal processing up to $900^{\circ}C$ for their crytallization. Crystallized single-phase $ZrTiO_4$ thin films were fabricated above the annealing temperature of $800^{\circ}C$, but their grains were randomly oriented without specific textured orientation. Best dielectric properties were presented by the sample annealed at $800^{\circ}C$ which had crystalline structure and flat surface. Dielectric constant of the film was maintained at 32 throughout full frequency range up to 6 GHz, and dielectric loss was varied between 0.01 and 0.04.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.27 no.11
• /
• pp.730-735
• /
• 2014

In this study, the temperature characteristics of electrostatic capacity and dielectric loss for the sample of Teflon film which is degradated at the $120^{\circ}C{\sim}200^{\circ}C$ temperature range in the oven for 10 hours has been measured in through the applied frequency range of 0.1 kHz~4,800 kHz at temperature of $50^{\circ}C$, $90^{\circ}C$, $130^{\circ}C$, $170^{\circ}C$. Also, in the same conditions, the frequency characteristics of electrostatic capacity and dielectric loss for the sample of Teflon film has been measured in through the applied temperature range of $30^{\circ}C{\sim}70^{\circ}C$ on setting frequency of 0.1 kHz, 1 kHz, 10 kHz, 100 kHz. The results of this study are as follows. When the frequency range of 0.1 kHz~4,800 kHz applied to the sample of Teflon film, the electrostatic capacity has been measured at the temperature of $50^{\circ}C$, $90^{\circ}C$, $130^{\circ}C$, $170^{\circ}C$. Through this measurement, it found that the electrostatic capacity decreased with increasing temperature. Regarding this result, may be it is because the electromagnetic coupling is degraded by thermal degradation. When the sample of Teflon film heated at $280^{\circ}C$ for 10 hours in oven, the dielectric loss has changed from unstable status to stabilizing status with increasing the degradation temperature in the $120^{\circ}C$, $160^{\circ}C$, $200^{\circ}C$ range. In this measurement, the two spectrums of dielectric loss appeared. It considers that this spectrum of dielectric loss appeared in 300 Hz is caused by the molecular motion of the C-F or OH group. Through this study, It found that the electrostatic capacity decreased with increasing frequency and temperature, and there is no change in dielectric loss, although the frequency increases.

• Journal of the Korean Vacuum Society
• /
• v.17 no.4
• /
• pp.341-345
• /
• 2008

The SiOC film of carbon centered system was prepared using bistrimethylsilylmethane and oxygen mixed precursor by the chemical vapor deposition. The chemical properties of the SiOC film were analyzed by the contact anlge and FTIR spectra. The dielectric constant of the deposited films decreased after annealing process, and the correlation between the increasing the BTMSM/$O_2$ flow rate ratio and the dielectric constant did not exist. However, the trend of increasing or decreasing of the dielectric constant repeated and there is the correlation ship between the dielectric constant and the Si-O-C bond in the range of $950{\sim}1200\;cm^{-1}$. The dielectric constant decreased between samples with the chemical shift. The lowest dielectric constant was 1.65 at the sample, which was observed the chemical shift.

• Journal of the Korean Ceramic Society
• /
• v.31 no.7
• /
• pp.795-803
• /
• 1994

Ferroelectric BaTiO3 thin film was produced using BaTi-ethoxide sol. This sol was prepared from BaTi-ethoxide by a partial hydrolysis with ammonia as a basic catalyst and ethylene glycol as a chelating agent. BaTiO3 thin film was prepared from three continuous spin-coating layers of the sol on bare Si(100) wafer at 2500 rpm followed by pyrolysis at $700^{\circ}C$ for 30 min. After the heat treatment, the film was 0.200$\pm$0.010 ${\mu}{\textrm}{m}$ thick and its grain size was 0.059 ${\mu}{\textrm}{m}$. On the other hand, electrical properties were measured for BaTiO3 thin film separately prepared on Au-deposited silicon wafer. The dielectric constant and loss of the BaTiO3 thin film at room temperature was 150~160 and 0.04 respectively, which was measured at 10 kHz and oscillation level of 0.1 V. In the measurements of the dielectric properties at high temperatures, it was observed that the capacitance of the thin film increases steeply, while the dielectric loss reaches maximum around 1$25^{\circ}C$, which corresponds a phase transition from tetragonal to cubic BaTiO3.

• 정보저장시스템학회:학술대회논문집
• /
• 2005.10a
• /
• pp.254-259
• /
• 2005

In this study, measurement of thermal conductivity of multilayer thin dielectric film has been conducted via differential 3$\omega$ method. Also, verification of differential 3$\omega$ method has been accomplished with various proposed criteria. The target film for measurement is 300 nm silicon dioxide and this thin film is covered with various thicknesses of upper protective layer. The upper protective layer is inserted between the target film and the heater line for purpose of electrical insulator or anti-oxidation barrier since the target film may be a good electrical conductor or a well-oxidizing material. However, the verification of differential 3$\omega$ method has not been conducted. Thus we have shown that the measurement of thermal conductivity of thin films with upper protective layer via differential 3$\omega$ method is verified to be reliable as long as the proposed preconditions are satisfied. Experimental results show that the experimental errors tend to increase with aspect ratio between upper protective layer thickness and width of the heater line due to heat spreading effect.

• Proceedings of the KIEE Conference
• /
• 1997.07d
• /
• pp.1229-1231
• /
• 1997

In this work, PZT(20/80)/(80/20) heterolayered thin film that has the tetragonal and rhombohedral structure was fabricated by Sol-Gel method spin-coated on the Pt/Ti/$SiO_2$/Si substrate by turns. The thickness of PZT-1 film obtained by six-times of drying/sintering process was about 480[nm]. This procedure was repeated several times to form PZT heterolayered thim film. PZT-5 thin films with top layer of tetragonal PZT(20/80) thin film showed dense grain structure and PZT-6 thin film with top layer of rhombohedral PZT(80/20) thin film showed the microstructure without rosette. Dielectric constant increased with increasing the number of coatings, and it was about 13S5 at PZT-6 thin film. Dielectric loss was not depend on the number of coatings.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2001.11a
• /
• pp.21-27
• /
• 2001

Epoxy/BaTiO$_3$composite film type capacitors with excellent stability at room temperature, uniform thickness, and electrical properties over a large area were successfully fabricated. We fabricated composite capacitor films with good film formation capability and easy process ability, from ACF-resin as a matrix and two kinds of BaTiO$_3$powders as fillers to increase the dielectric constant of the composite film. The crystal structure of the powders and its effects on dielectric constant of the films were investigated by X-ray diffraction. DSC and dielectric properties tests were conducted to decide the right curing temperature and the optimum amount of the curing agent. As a result, the capacitors of $7{\mu}{\textrm}{m}$ thick film with 10nF/cm2 and low leakage current were successfully demonstrated.

• Transactions on Electrical and Electronic Materials
• /
• v.4 no.4
• /
• pp.13-17
• /
• 2003

This paper deals with the edge effect in thin insulating films, focusing on their dependence on film thickness. The finding is that the electric field is lowered at the edge as the film thickness is reduced, which, in turn, is closely related to dielectric breakdown voltage. In order to analyze this phenomenon, a simple capacitor model is introduced with which dependence of dielectric breakdown voltage around the electrode edge on the film thickness is explained. Due to analytical difficulty to get the expression of electrical field strength at the edge, an equivalent circuit approach is used to find the voltage expression first and then the electric field expression using it. The relation gets to an agreement with the experimental findings shown in the paper. This outcome may be extended to solve similar problems in multi-layer insulating films.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08a
• /
• pp.915-918
• /
• 2007

We have grown $SiO_2$ film on a polycrystalline Si layer using excited ozone gas, which is produced by ultra-violet light irradiation to ozone gas, without heating substrate. The obtained $SiO_2$ film shows dielectric properties comparable to the device quality films measured at the MIS capacitor configuration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1996.05a
• /
• pp.150-153
• /
• 1996

Polyvinylidene fluoride(PVDF) thin films are fabricated by vapor deposition method and their dielectric characteristics are investigated. At electric field near 4MV/m, a phase transition occur with polar ${\alpha}$ . In accordance to increasing temperature, the dielectric relaxation of PVOF thin films show from 70Hz to 104Hz. This result correspond to Debye's theory[1]. Activation energy of PVDP thin film is 21Kca1/mo1.