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http://dx.doi.org/10.4313/JKEM.2009.22.1.053

Microstructure and Microwave Dielectric Properties of ZrTiO4 Thin Films Prepared by Metal-organic Decomposition  

Park, Chang-Sun (군산대학교 신소재공학과)
Sun, Ho-Jung (군산대학교 신소재공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.22, no.1, 2009 , pp. 53-60 More about this Journal
Abstract
$ZrTiO_4$ dielectric thin films were coated by metal-organic decomposition, and annealed by rapid thermal processing up to $900^{\circ}C$ for their crytallization. Crystallized single-phase $ZrTiO_4$ thin films were fabricated above the annealing temperature of $800^{\circ}C$, but their grains were randomly oriented without specific textured orientation. Best dielectric properties were presented by the sample annealed at $800^{\circ}C$ which had crystalline structure and flat surface. Dielectric constant of the film was maintained at 32 throughout full frequency range up to 6 GHz, and dielectric loss was varied between 0.01 and 0.04.
Keywords
$ZrTiO_4$; Thin film; Metal-organic decomposition; Microwave; Dielectric property;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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