한국정보디스플레이학회:학술대회논문집
- 2007.08a
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- Pages.915-918
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- 2007
Gate dielectric SiO2 film deposition on poly Silicon using UV-excited ozone gas without heating substrate.
- Kameda, Naoto (R&D center, Meidensha Corporation, Reseach Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology (AIST)) ;
- Nishiguchi, Tetsuya (R&D center, Meidensha Corporation, Reseach Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology (AIST)) ;
- Morikawa, Yoshiki (R&D center, Meidensha Corporation) ;
- Kekura, Mitsuru (R&D center, Meidensha Corporation) ;
- Nonaka, Hidehiko (Reseach Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology (AIST)) ;
- Ichimura, Shingo (Reseach Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology (AIST))
- Published : 2007.08.27
Abstract
We have grown