• Journal of Sensor Science and Technology
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• v.6 no.1
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• pp.6-15
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• 1997

This paper presents the multi-objective optimal design of thermopile sensor having beam or membrane structure. The thermopile sensor is composed of $Si_{3}N_{4}/SiO_{2}$ dielectric membrane, Al-polysilicon thermocouples and $RuO_{2}$ thin film for black body. The sensing method is based on the Seebeck effect which is originated from the temperature difference of the two positions, black body and silicon rim. The objective functions of the presented design are sensitivity, detectivity and thermal time constant. The modelling of the sensor is proposed including the package. The multi-objective optimization technique is applied to the design of the sensor not only inspecting the modelling equation but also simulating mathematical programming method. Especially, fuzzy optimization technique is adapted to get the optimal solution which enables the designer to reach the more practical solution. The design constraint of the voltage output originated from the change of the environmental temperature is included for practical use.

• Korean Journal of Materials Research
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• v.2 no.4
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• pp.285-292
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• 1992

Ultrathin(8nm) oxynitride (SiOxNy) film have been formed on Si(100) by rapid thermal processing(RTP) in $O_2$and $N_2$O as reactants. Compared with conventional furnace $O_2$ oxide, the oxynitride dielectrics shows better characteristics of I-V and TDDB, and less flat-band voltage shift. The oxynitride has a behavior of Fowler-Nordheim tunneling in the region of V 〉${\varphi}_0$ simialr to pure Si$O_2$oxide. The relative dielectric constant of oxynitride is higher than that of conventional pure oxide. Excellent diffusion harrier property to dopant(B$F_2$) is also observed. Nitrogen depth profiles by SIMS, AES, and XPS show nitrogen pile - up at Si$O_2$/Si interface, which can explain the improved properties of oxynitride dielectrics.

• Journal of electromagnetic engineering and science
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• v.10 no.3
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• pp.158-165
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• 2010

This study reviewed terahertz technologies of time domain spectroscopy, T-ray imaging, and high rate wireless data transfer. The main topics of the terahertz research area were investigation of materials and package modules for terahertz wave generation and detection, and setup of the terahertz system for time domain spectroscopy(TDS), T-ray imaging and sub-THz wireless communication. In addition to Poly-GaAs film as a photoconductive switching antenna material, a table-top scale for the THz-TDS/imaging system and terahertz continuous wave(CW) generation systems for sub-THz data transfer and narrow band T-ray imaging were designed. Dielectric properties of ferroelectric BSTO($Ba_xSr_{1-x}TiO_3$) films and chalcogenide glass systems were characterized with the THz-TDS system at the THz frequency range. Package modules for terahertz wave transmitter/receiver(Tx/Rx) photoconductive antenna were developed.

• Korean Journal of Materials Research
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• v.4 no.4
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• pp.401-405
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• 1994

The chemical composition and electrical properties were investigated for epitaxially crystallized $(Ba_{0.5}Sr_{0.5})Tio_3$ (BST) films deposited on Pt and $YBa_Cu_3O_{7-x}$(YBCO) electrodes by laser ablation technique. The crystalline quality of the heteroepitaxial BST films deposited on Pt bottom electrode was found to be better than that of BST film on YBCO electrode by the RBS analysis. Films deposited at $600^{\circ}C$ on Pt electrode showed a dielectric constant of 320 and a dissipation factor of 0.023 at 100kHz. Leakage current density of BST films on Pt electrode was smaller than that on YBCO bottom electrode. Their leakage current density was about 0.8$\mu \; A/ \textrm{cm}^2$ at an applied electric field of 0.15MV/cm.

• Korean Journal of Materials Research
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• v.4 no.4
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• pp.453-458
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• 1994

$(Ba_{0.5}Sr_{0.5)/TiO_3$(BST) thin films were prepared for the application of 256 Mb DRAM by RF magnetron sputtering. The crystallinity of BST thin films increased with increasing deposition tempera lure. The composition of thin films was $(Ba_{0.48}Sr_{0.48)/TiO_{2.93}$ Pt/Ti barrier layer suppressed the diffusion of Si into BST layer. The films showed a dielectric constant of 320 and a dissipation factor of 0.022 at 100 kHz. the change of capacitance of the films with applied voltage was small, showing paraelectric property. The charge storage density and leakage current density were 40fC/$\mu \textrm{m}^{2}$ and 0.8$\mu A/\textrm{cm}^2$, respectively at a field of 0.15 MV/cm. The BST films obtained by RF magnetron sputtering appeared to be potential thin film capacitors for 256 Mb DRAM application.

• Korean Journal of Materials Research
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• v.22 no.9
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• pp.454-458
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• 2012

Various adhesive materials are used in flip chip packaging for electrical interconnection and structural reinforcement. In cases of COF(chip on film) packages, low temperature bonding adhesive is currently needed for the utilization of low thermal resistance substrate films, such as PEN(polyethylene naphthalate) and PET(polyethylene terephthalate). In this study, the effects of anhydride and dihydrazide hardeners on the low-temperature snap cure behavior of epoxy based non-conductive pastes(NCPs) were investigated to reduce flip chip bonding temperature. Dynamic DSC(differential scanning calorimetry) and isothermal DEA(dielectric analysis) results showed that the curing rate of MHHPA(hexahydro-4-methylphthalic anhydride) at $160^{\circ}C$ was faster than that of ADH(adipic dihydrazide) when considering the onset and peak curing temperatures. In a die shear test performed after flip chip bonding, however, ADH-containing formulations indicated faster trends in reaching saturated bond strength values due to the post curing effect. More enhanced HAST(highly accelerated stress test) reliability could be achieved in an assembly having a higher initial bond strength and, thus, MHHPA is considered to be a more effective hardener than ADH for low temperature snap cure NCPs.

• Journal of the Korean Vacuum Society
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• v.12 no.1
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• pp.40-45
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• 2003

High quality $Ta_2O_5$ thin films have been obtained from the anodization of deposited tantalum (Ta). The as-deposited amorphous films of 750 $\AA$ thickness have excellent electrical properties. These properties include refractive indices 2.1~2.2 dielectric constants ~25, and leakage currents $10^{-8}$ /A$\textrm{cm}^{-2}$ at 1 MV$\textrm{cm}^{-1}$. We fabricated a MIM element with the $Ta_2O_5$ films. They have perfect current-voltage symmetry characteristics. A high performance MIM device was formed by newly developed processes based on our unique anodization and annealing treatment. The effects of various processing conditions (top-electrode metals, annealing conditions) on the MIM device performances will be extensively discussed throughout this work.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.10
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• pp.785-791
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• 2001

High dielectric (Ba, Sr) TiO$_3$ thin films were etched in an inductively coupled plasma (ICP) as a function of Cl$_2$/Ar mixing ration. Under Cl$_2$(20)/Ar(80), the maximum etch rate of the BST films was 400 $\AA$/mim and selectivities of BST to Pt and PR were obtained 0.4 and 0.2, respectively. Etching products were redeposited on the surface of BST and resulted in varying the nature of crystallinity. Therefore, we investigated the etched surface of BST by x-ray photoelectron spectroscopy (XPS) atomic force microscopy (AFM) and x-ray diffraction (XRD). From the result of XPS analysis, we found that residues of Ba-Cl and Ti-Cl bonds remained on the surface of the etched BST for high boiling point. The morphology of the etched surfact was analyzed by AFM. A smoothsurface(roughness ~2.8nm) ws observed under Cl$_2$(20)/Ar(80), rf power of 600 W, dc bias voltage of -250 V and pressure of 10 mTorr. This changed the nature of the crystallinity of BST. From the result of XRD analysis, the crystallinities of the etched BST film under Ar only and Cl$_2$(20)/Ar(80) were maintained as similar to as-deposited BST. However, intensity of BST(100) orientation under Cl$_2$ only plasma was abruptly decreased. This indicated that CI compounds were redeposited on the etched BST surface and resulted in changed of the crystallinity of BST during the etch process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.8-11
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• 2001

In this study. the recovery of plasma induced damage in the etched PZT thin film with $O_2$ re-annealing have been investigated. The PZT thin films were etched as a function of $Cl_2/Ar$ and additive $CF_4$ into $Cl_{2}(80%)/Ar(20)%$. The etch rates of PZT thin films were $1600\dot{A}/min$ at $Cl_{2}(80%)/Ar(20)%$ gas mixing ratio and $1970\dot{A}/min$ at 30 % additive $CF_4$ into $Cl_{2}(80%)/Ar(20)%$. The etched profile of PZT films was obtained above 70 by SEM. In order to recovery properties of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures in $O_2$ atmosphere. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed sample is consistent with the increase of the (100) and (200) PZT phase revealed by x-ray diffraction (XRD). From XPS analysis, intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of TixOy is recovered by $O_2$ recombination during rapid thermal annealing process. From AFM images, it shows that the surface roughness of re-annealed sample after etching is improved.

• Polymer(Korea)
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• v.31 no.6
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• pp.526-531
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• 2007

This paper reports the first results of a series of planarization film study for the stainless steel (SS) substrates for flexible displays. Diglycidyl ether of bisphenol A (DGEBA) and octa(dimethylsiloxypropylglycidylether) silsesquioxane (OG) were chosen for the organic and the hybrid epoxies respectively and diaminodiphenylmethane (DDM) was used as a curing agent at 1:2 stoichiometric ratio. These materials were spin-coated on SS substrates and thermal-cured. TGA study indicated that both the pristine and the cured OG were more thermally stable than DGEBA. AFM study showed that the smooth surfaces of $1{\sim}2\;nm$ roughness can be prepared for both DGEBA and OG when the films were thick ($>\;1\;{\mu}$). The electrical properties such as dielectric constant, capacitance and the leakage current with respect to the applied voltage were all stable even after the stress of $100\;V/100^{\circ}C$ was applied for $0{\sim}10000$ seconds indicating that the insulating properties of DGEBA and OG films were very reliable.