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Epoxy Planarization Films for the Stainless Steel Substrates for Flexible Displays  

Hong, Yong-Teak (Department of Electrical Engineering and Computer Science, Seoul National University)
Jung, Seung-Joon (Department of Electrical Engineering and Computer Science, Seoul National University)
Choi, Ji-Won (Department of Chemical Engineering, Kyung Hee University)
Publication Information
Polymer(Korea) / v.31, no.6, 2007 , pp. 526-531 More about this Journal
Abstract
This paper reports the first results of a series of planarization film study for the stainless steel (SS) substrates for flexible displays. Diglycidyl ether of bisphenol A (DGEBA) and octa(dimethylsiloxypropylglycidylether) silsesquioxane (OG) were chosen for the organic and the hybrid epoxies respectively and diaminodiphenylmethane (DDM) was used as a curing agent at 1:2 stoichiometric ratio. These materials were spin-coated on SS substrates and thermal-cured. TGA study indicated that both the pristine and the cured OG were more thermally stable than DGEBA. AFM study showed that the smooth surfaces of $1{\sim}2\;nm$ roughness can be prepared for both DGEBA and OG when the films were thick ($>\;1\;{\mu}$). The electrical properties such as dielectric constant, capacitance and the leakage current with respect to the applied voltage were all stable even after the stress of $100\;V/100^{\circ}C$ was applied for $0{\sim}10000$ seconds indicating that the insulating properties of DGEBA and OG films were very reliable.
Keywords
epoxy; silsesquioxane; flexible display; planarization; stainless steel;
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1 A. J. Heeger and J. Long Jr., Opt. Photon. News, 7, 23 (1996)
2 T. Serikawa and F. Ornata, IEEE Electr. Device L., 20, 574 (1999)
3 T. Afentakis, M. Gatalis, A. T. Voutsas, and J. Hartzell, IEEE T. Electron. Dev., 53, 815 (2006)   DOI   ScienceOn
4 C. C. Wu, S. D. Theiss, G. Gu, M. H. Lu, J. C. Strum, S. Wagner, and S. R. Forrest, IEEE Electr. Device L., 18, 609 (1997)
5 D. Jin, J. Jeong, H. Shin, M. Kim, T. Ahn, S. Kwon, J. Kwack, T. Kim, Y. Mo, and H. Chung, SID 06 DIGEST, 1855 (2006)
6 J. Chang, J. Wu, C. Huang, Y. Chen, L. Wang, Y. Luo, I. Peng, T. Wong, M. Wang, and J. Chang, Euro Display, 133 (2005)
7 F. Templier, B. Aventurier, M. Moreau, A. Mortillaro, R. Ternplier, and A. Passero, EuroDisplay, 414 (2005)
8 A. Sellinger and R. M. Laine, Chem. Mater., 8, 1592 (1996)
9 R. Schwodiauer, G. S. Neugschwandtner, S. Bauer-Gogonea, and S. Bauer, Appl. Phys. Lett., 75, 3998 (1999)
10 R. Sehwodiauer, G. S. Neugschwandtner, S. Bauer-Gogonea, and S. Bauer, Appl. Phys. Lett., 76, 2612 (2000)
11 A. Chwang, R. Hewitt, K. Urbanik, J. Silvernail, K. Raian, and M. Hack, SID 06 DIGEST, 1858 (2006)
12 G. Gustafsson, Y. Cao, G. M. Treacy, F. Klavetter, N. Colaneri, and A. J. Heeger, Nature, 357,477 (1992)
13 G. Gu, P. E. Burrows, S. Venkatesh, and S. R. Forrest, Opt. Lett., 22, 172 (1992)
14 T. Chang, T. Chang, P. Liu, T. Chang, and F. Yeh, Thin Solids Films, 498, 70 (2006)   DOI
15 M. Wu, K. Pangal, J. C. Sturm, and S. Wagner, Appl. Phys. Lett., 75, 2244 (1999)
16 Z. Suo, E. Y. Ma, H. Gleskova, and S. Wagner, Appl. Phys. Lett., 74, 1177 (1999)
17 J. Choi, J. Hareup, A. F. Yee, Q. Zhu, and R. M. Laine, J. Am. Chem. Soc., 123,11420 (2001)   DOI   ScienceOn
18 S. D. Theiss and S. Wagner, IEEE Electr. Device L., 17, 578 (1996)
19 M. Wu, X. Bo, J. C. Sturm, and S. Wagner, IEEE T. Electron. Dev., 49, 1993 (2002)
20 J. Cheon, J. Choi, J. Hun, and J. Jang, IEEE T. Electron. Dev., 53, 1273 (2006)   DOI   ScienceOn
21 A. Boudefel and P. Gonon, J. Mater. Sci: Mater. Electron., 17, 205 (2006)   DOI   ScienceOn
22 C. Maddalon, K. Barla, E. Denis, E. Lous, E. Perrin, S. Lis, C. Lair, and E. Dehan, Microelectron. Eng., 50, 33 (2000)
23 P. Liu, T. Chang, M. Huang, Y. Yang, Y. Mor, M. S. Tsai, H. Chung, J. Hou, and S. M. Sze, J. Electrochem. Soc., 147, 4313 (2000)
24 L. Zong, S. Zhou, N. Sgriccia, and M. C. Hawley, Polym. Eng. Sci, 45, 1576 (2005)   DOI   ScienceOn
25 D. M. Mofatt, MRS Bulletin, 21, 31 (1996)
26 P. M. Smith, P. G. Carey, and T. W. Sigmon, Appl. Phys. Lett., 70, 342 (1997)
27 T. Chang, P. Liu, T. Tasi, F. Yeh, T. Tseng, M. Tsai, B. Chen, Y. Yang, and S. Sze, Jpn. J. Appl. Phys., 40, 3143 (2001)   DOI
28 H. Lee, C. L. Soles, D. W. Liu, B. J. Bauer, E. K. Lin, and W. L. Wu, J. Appl. Phys., 95, 2355 (2004)   DOI   ScienceOn
29 R. S. Howell, M. Stewart, S. V. Karnik, S. K. Saha, and M. Hatalis, IEEE Electr. Device L., 21, 70 (2000)