• Earthquakes and Structures
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• v.24 no.5
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• pp.333-343
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• 2023

Various seismic isolation and reduction devices have been applied to suppress the longitudinal vibration of continuous girder bridges. As representative devices, lead rubber bearing (LRB) and fluid viscous damper (FVD) might suffer from deterioration during the long-term service. This study aims to evaluate the impact of device deterioration on the seismic responses of continuous girder bridges and investigate the seismic behavior of deteriorated LRBs and FVDs. Seismic performance of a simplified bridge model was investigated, and the influence of device deterioration was evaluated by the coefficient of variation method. The contribution of LRB and FVD was assessed by the Sobol global sensitivity analysis method. Finally, the seismic behaviors of deteriorated LRBs and FVDs were discussed. The result shows that (i) the girder-pier relative displacement is the most sensitive to the changes in the deterioration level, (ii) the deterioration of FVD has a greater effect on the structural responses than that of LRB, (iii) FVD plays a major role in energy dissipation with a low degradation level while LRB is more essential in dissipating energy when suffering from high degradation level, (iv) the deteriorated devices are more likely to reach the ultimate state and thus be damaged.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.2 s.332
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• pp.9-14
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• 2005

This paper reports the hot carrier induced RF performance degradation of bulk dynamic threshold voltage MOSFET (B-DTMOS) compared with bulk MOSFET (B-MOS). In the normal and moderate mode operations, the degradations of cut-off frequency $(f_{T})$ and minimum noise figure $(F_{min})$ of B-DTMOS are less significant than those of B-MOS devices. Our experimental results show that the RF performance degradation is more significant than the U performance degradation after hot carrier stressing. Also, the degradation characteristics of RF power Performance of B-DTMOS due to hot carrier effects are measured for the first time.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.867-870
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• 1998

In this paper we simulated 0.30um NMOS transitor to analysis hot carrier degradation depend on As, As+P, P LDD structure. As a result we obtained As+P LDD structure was good hot carrier immunity. Also we find that hog carrier life time improved a sincresing P dose due to P dose helps in grading the nLDD junction. However As-only junction was poor due to junction high peak position located near the surface.

• Journal of Semiconductor Engineering
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• v.2 no.1
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• pp.119-124
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• 2021

Along with the needs for feasibility in the field of space applications, interests in radiation-hardened electronics is growing rapidly. Gallium nitride (GaN)-based devices have been widely researched so far owing to superb radiation resistance. Among them, research on the most abundant protons in low earth orbit (LEO) is essential. In this paper, proton irradiation effects on parameter changes, degradation mechanism, and correlation with reliability of GaN-based devices are summarized.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.29-34
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• 1993

In this paper, we used one-dimensional process simulator, SUPREM-II, and two-dimensional device simulator, MINIMOS 4.0 to extract optimal process parameter that can minimize degradation of device characteristics caused by process parameter variation in the case of short channel nMOSFET and pMOSFET device. From this simulation, we have derieved the relationship between process parameter and device characteristics. Here we have presented a method to extract process parameters from design trend curve(DTC) obtained by process and device simulations. We parameters to verify the validity of the DTC method. The experimental result of 0.8 $\mu\textrm{m}$ channel length devices that have been fabricated with optimal that reduces short channel effects, that is, good drain current-voltage characteristics, low body effects and threshold voltage of 1.0 V, high punchthrough and breakdown voltage of 12 V, low subthreshold swing(S.S) values of 105 mV/decade.

• International Journal of Internet, Broadcasting and Communication
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• v.7 no.2
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• pp.113-116
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• 2015

Generally, in the railway vehicle the driving force of gravity happens by the high-speed running and the repetitive impulse cause the degradation and the malfunction phenomenon shows differently because the durability of each component changes according to the internal and external causes. The maintenance of propulsion control device which is played the very important role as to the stable service of the railway vehicle is greatly important among them. Therefore maintenance training propulsion control device simulator is needed to maximize learning through repetition and improve the maintenance practical skills training. This paper designed the railway vehicle running device with a miniature for the railway vehicle maintenance training and developed a propulsion control device simulator equipped the imitation steering wheel.

• Journal of the Semiconductor & Display Technology
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• v.20 no.3
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• pp.131-135
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• 2021

Numbers of studies related to optimization of design of organic light emitting diodes(OLED) through machine learning are increasing. We propose the generative method of the image to assess the performance of the device combining with machine learning technique. Principle parameter regarding dark spot growth mechanism of the OLED can be the key factor to determine the long-time performance. Captured images from actual device and randomly generated images at specific time and initial pinhole state are fed into the deep neural network system. The simulation reinforced by the machine learning technique can predict the device parameters accurately and faster. Similarly, the inverse design using multiple layer perceptron(MLP) system can infer the initial degradation factors at manufacturing with given device parameter to feedback the design of manufacturing process.

• Journal of Positioning, Navigation, and Timing
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• v.11 no.2
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• pp.119-126
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• 2022

This paper presents a method to reduce the vibration-induced noise effect of an inertial measurement device mounted on a self-driving vehicle. The inertial sensor used in the GNSS/INS integrated navigation system of a self-driving vehicle is fixed directly on the chassis of vehicle body so that its navigation output is affected by the vibration of the vehicle's engine, resulting in the degradation of the navigational performance. Therefore, these effects must be considered when mounting the inertial sensor. In order to solve this problem, this paper proposes to use an in-house manufactured vibration suppression device and analyzes its impact on reducing the vibration effect. Experimental test results in a static scenario show that the vibration-induced noise effect is more clearly observed in the lateral direction of the vehicle, but can be effectively suppressed by using the proposed vibration suppression device compared to the case without it. In addition, the dynamic positioning test scenario shows the position, speed, and posture errors are reduced to 74%, 67%, and 14% levels, respectively.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.3
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• pp.131-137
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• 2005

This paper describes a new approach to the algorithm and fundamental characteristics of the device for monitoring the leakage currents flowing through zinc oxide (ZnO) surge arresters. In order to obtain a technique for a new on-line monitoring device that can be used in the deterioration diagnosis of ZnO surge arresters, the new algorithm and on-line leakage current detection device for extracting the resistive and capacitive currents using the phase shift addition method were proposed. The computer-based on-line monitoring device can sense accurately the power frequency leakage currents flowing through ZnO surge arresters. The on-line leakage current monitoring device of ZnO surge arresters proposed in this work has the high sensitivity compared to the third harmonic leakage current detection devices. As a consequence, it was found that the proposed leakage current monitoring device would be useful for forecasting the defects and degradation of ZnO surge arresters.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1065-1070
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• 2007

The effects of hot carriers and self-heating on the electrical stability of p-channel TFTs have been analysed combining experimental data and numerical simulations. While hot carrier effects were shown not to induce appreciable degradation, self-heating related instability was found to more seriously affect the device characteristics. New models have been developed to explain the reported results.