Browse > Article

The RF performance degradation in Bulk DTMOS due to Hot Carrier effect  

Park Jang-Woo (Department of Electronic Engineering, Incheon University)
Lee Byoung-Jin (Department of Electronic Engineering, Incheon University)
Yu Jong-Gun (Department of Electronic Engineering, Incheon University)
Park Jong-Tae (Department of Electronic Engineering, Incheon University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.42, no.2, 2005 , pp. 9-14 More about this Journal
Abstract
This paper reports the hot carrier induced RF performance degradation of bulk dynamic threshold voltage MOSFET (B-DTMOS) compared with bulk MOSFET (B-MOS). In the normal and moderate mode operations, the degradations of cut-off frequency $(f_{T})$ and minimum noise figure $(F_{min})$ of B-DTMOS are less significant than those of B-MOS devices. Our experimental results show that the RF performance degradation is more significant than the U performance degradation after hot carrier stressing. Also, the degradation characteristics of RF power Performance of B-DTMOS due to hot carrier effects are measured for the first time.
Keywords
Dynamic Threshold Voltage MOSFET; Bulk MOSFET; Hot carrier effects; RF performance; Device degradation;
Citations & Related Records
연도 인용수 순위
  • Reference
1 H. Fukui, 'Optimal noise figure of microwave GaAs MESFETs,' IEEE Trans. Electron Devices, vol. 26, no. 7, pp. 1032-1037, 1979   DOI
2 T. Sowlati, D.M. Leenaerts, 'A 2.4GHz $0.18{\mu}m$ CMOS Self-Biased Cascade Power Amplifier,' IEEE J. Solid-State Circuits, vol. 38, no. 8, pp. 1318-1324, 2000
3 W. Li, Q. Li, J.S. Yuan, J. Mcconkey, 'Hot-carrier-Induced Circuit Degradation for 0.18um CMOS Technology,' Quality Electronic Design Int. Symp, pp. 284-289, 2001   DOI
4 J.K. Lee, N.J. Choi, C.G. Yu, J.P. Colinge, and J.T. Park, 'Temperature Dependence of Hot-Carrier Degradation in Silicon-on-Insulator Dynamic Threshold Voltage MOS Transistors,' IEEE Electron Dev Letters, vol. 23, no. 11, pp. 673-675, 2002   DOI   ScienceOn
5 S. H. Renn, J.L. Pelloie, and F. Balestra, 'Hot-Carrier Effects and Reliable Lifetime Prediction in Deep Submicron N- and P-Channel SOI MOSFET's,' IEEE Trans. Electron Device, vol. 45, no. 11, pp. 2335-2342, 1998   DOI   ScienceOn
6 C. C. Enz and Y. Cheng, 'MOS Transistor Modeling for RF IC Design,' IEEE Trans. Solid-State Circuits, vol. 35, no. 2, pp. 186-201, 2000   DOI   ScienceOn
7 Y. T. Yew, C.H. Ling, and D.S. Ang, 'Observation of MOSFET Degradation Due to Electrical Stressing Through Gate-to-Drain Capacitance,' IEEE Electron Device Letters, vol. 12, no. 7, pp. 366-368, 1991   DOI   ScienceOn
8 S. Naseh, M.J. Deen, and O. Marinov, 'Effects of Hot-Carrier Stress on the RF Performance of 0.18 um Technology NMOSFETs and Circuits,' Proc. of International Reliability Physics Sym., pp. 98-104, 2002
9 T. Douseki, S. Shigematsu, J. Yamada, M. Harada, H. Inokawa, and T. Tsuchiya, 'A 0.5-V MTCMOS/SIMOX logic gate', IEEE Journal of Solid-State Circuits, vol. 32, no. 10, pp. 1604-1609, 1997   DOI   ScienceOn
10 R. Huang, J. Wang, X. Zhang, and Y. Wang, 'Hot-carrier induced degradation in mesa-isolated n-channel SOI MOSFETs operating in a bi-MOS mode,' IEEE Trans. Electron Devices, vol. 48, no. 8, pp. 1594-1598, 2001   DOI   ScienceOn
11 C.Y. Chang, J.G. Su, H.M. Hsu, S.C. Wong, T.Y. Huang, and Y.C. Sun, 'Investigation of Dynamic Threshold-Voltage MOSFET with 65GHz Normal Mode $f_T$ and 220GHz Over-Drive Mode $f_T$ for RF Applications,' Symp, on VLSI Technology, pp. 89-90, 2001
12 A.Yagishita, T. Saito, S. Inumiya, K. Matsuo, Y. Tsunashima, K. Suguro, and T. Arikado, 'Dynamic Threshold Voltage Damascene Metal Gate MOSFET (DT-DMG-MOS) with Low Threshold Voltage, High Drive Current, and Uniform Electrical Characteristics,' Tech. of Digest IEDM, pp. 663-667, 2000   DOI
13 Y. Momiyama, T. Hirose, H. Kurata, K. Goto, Y. Watanabe, and T. Sugii, ' A 140GHz $f_T$ and 60 GHz $f_{max}$ DTMOS Integrated with High-Performance SOI Logic Technology,' Tech. Digest of IEDM, pp. 451-453, 2000   DOI
14 F. Assaderaghi, D. Sinitsky, S. Parke, J. Bokor, P. Ko, and C. Hu, 'A Dynamic Threshold Voltage MOSFET (DTMOS) for Ultra-Low Voltage Operation,' Tech. of Digest IEDM, pp. 809-813, 1994   DOI
15 S. S. Rofail, and Y. K. Seng, 'Experimentally-Based Analytical Model of Deep-Submicron LDD pMOSFET's in a Bi-MOS Hybrid-Mode Environment,' IEEE Trans. Electron Devices, vol. 44, no. 9, pp. 1473-1482, 1997   DOI   ScienceOn
16 R. Hung, Y. Y. Wang, and R. Han, 'Analytical Model for the Collector Current in SOI Gated-Controlled Hybrid Transistor,' Solid-State Electronics, vol. 39, no. 12, pp.1816-1818, 1998   DOI