• Title/Summary/Keyword: density dependent

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Development and Predation of a Aphidophagous Gall Midge, Aphidoletes aphidimyza (Roundani) (Diptera: Cecidomyiidae) on Myzus persicae Sulzer (진딧물류를 포식하는 혹파리, Aphidoletes aphidimyza(Roundani)(Diptera: Cecidomyiidae)의 복숭아혹진딧물 포식과 발육)

  • 최만영;이건휘;백채훈;김두호
    • Korean journal of applied entomology
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    • v.40 no.1
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    • pp.44-49
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    • 2001
  • Development and predation of an aphidophagous gall midge, Aphidoletes aphydimyza (Rondani) , on the green peach aphid, Myzus persicae Sulzer, were studied under laboratory and greenhouse conditions. The developmental threshold temperature of the gall midge larvae was estimated to be $13^{\circ}C$. Larval and total developmental periods were 5.3 and 29 days at 25 $\pm$$2^{\circ}C$. The gall midge attacked more aphids as increasing density of peach aphids, and consumed 4 out of 10 peach aphids per day in a petri dish (9 cm in diameter) at maximum. In green house, the gall midge could control the density of the green peach aphids efficiently with a delayed density dependent-like pattern.

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The Study on the Trap Density in Thin Silicon Oxide Films

  • Kang, C.S.;Kim, D.J.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.04b
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    • pp.43-46
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    • 2000
  • In this paper, the stress and transient currents associated with the on and off time of applied voltage were used to measure the density and distribution of high voltage stress induced traps in thin silicon oxide films. The transient currents were due to the discharging of traps generated by high stress voltage in the silicon oxides. The trap distributions were relatively uniform near both cathode and anode interface. The trap densities were dependent on the stress polarity. The stress generated trap distributions were relatively uniform the order of $10^{11}\sim10^{21}$[states/eV/$cm^2$] after a stress. The trap densities at the oxide silicon interface after high stress voltages were in the $10^{10}\sim10^{13}$[states/eV/$cm^2$]. It appear that the stress and transient current that flowed when the stress voltage were applied to the oxide was caused by carriers tunneling through the silicon oxide by the high voltage stress generated traps.

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High-Cell-Density Fed-Batch Culture of Saccharomyces cerevisiae KV-25 Using Molasses and Corn Steep Liquor

  • Vu, Van Hanh;Kim, Keun
    • Journal of Microbiology and Biotechnology
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    • v.19 no.12
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    • pp.1603-1611
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    • 2009
  • High-cell-density cultivation of yeast was investigated using the agricultural waste products corn steep liquor (CSL) and molasses. The Saccharomyces cerevisiae KV-25 cell mass was significantly dependent on the ratio between C and N sources. The concentrations of molasses and CSL in the culture medium were statistically optimized at 10.25% (v/v) and 16.87% (v/v), respectively, by response surface methodology (RSM). Batch culture in a 5-l stirred tank reactor using the optimized medium resulted in a cell mass production of 36.5 g/l. In the fed-batch culture, the feed phase was preceded by a batch phase using the optimized medium, and a very high dried-cell-mass yield of 187.63 g/l was successfully attained by feeding a mixture of 20% (v/v) molasses and 80% (v/v) CSL at a rate of 22 ml/h. In this system, the production of cell mass depended mainly on the agitation speed, the composition of the feed medium, and the glucose level in the medium, but only slightly on the aeration rate.

Fabrication of Low-Shrinkage Reaction-Bonded Alumina Ceramics (저수축 반응소결 알루미나 세라믹스의 제조)

  • 박정현;이현권;정경원;염강섭
    • Journal of the Korean Ceramic Society
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    • v.29 no.6
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    • pp.419-430
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    • 1992
  • Fabrication possibility of low-shrinkage alumina without oxidation and wetting agent was presented on the basis of observation about oxidation behavior, microstructure and physical characteristics of such reaction agents free Al2O3-Al system. The composition less than Al 10w/o where Al can act as a sintering agent for Al2O3 was excluded. Under the condition of present experiments oxidation of Al2O3-Al system was dependent not on holding time but mainly on oxidation temperature. In thes case of Al powder not comminuted effectively during powder mixing of Al2O3-Al, columnar structure which would act as a hindrance to the densification during sintering developed more during oxidation with higher Al contents, and which made the fabrication of low-shrinkage Al2O3 ceramics impossible. If Al powder was comminuted effectively due to co-mixed Al2O3 characteristics, densification was improved because of no columnar structure and made the fabrication of sintered body with -2.7% dimensional change and 81% relative density possible. As a result, it is possible to fabricate dense low-shrinkage Al2O3 ceramics without oxidation and wetting agent under conditions such as smaller particle size of Al, Al contents below 50v/o, higher green density of Al2O3-Al compact and the use of Al2O3 powder used for high-density ceramics.

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Structure-property relations for polymer melts: comparison of linear low-density polyethylene and isotactic polypropylene

  • Drozdov, A.D.;Al-Mulla, A.;Gupta, R.K.
    • Advances in materials Research
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    • v.1 no.4
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    • pp.245-268
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    • 2012
  • Results of isothermal torsional oscillation tests are reported on melts of linear low density polyethylene and isotactic polypropylene. Prior to rheological tests, specimens were annealed at various temperatures ranging from $T_a$ = 180 to $310^{\circ}C$ for various amounts of time (from 30 to 120 min). Thermal treatment induced degradation of the melts and caused pronounced decreases in their molecular weights. With reference to the concept of transient networks, constitutive equations are developed for the viscoelastic response of polymer melts. A melt is treated as an equivalent network of strands bridged by junctions (entanglements and physical cross-links). The time-dependent response of the network is modelled as separation of active strands from and merging of dangling strands with temporary nodes. The stress-strain relations involve three adjustable parameters (the instantaneous shear modulus, the average activation energy for detachment of active strands, and the standard deviation of activation energies) that are determined by matching the dependencies of storage and loss moduli on frequency of oscillations. Good agreement is demonstrated between the experimental data and the results of numerical simulation. The study focuses on the effect of molecular weight of polymer melts on the material constants in the constitutive equations.

The Cooling System for Head up Display (Head up Display용 냉각시스템)

  • Ji, Youg-Seok;Kim, Young-Seop;An, Byeong-Man;Lim, Sang-Min
    • Journal of the Semiconductor & Display Technology
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    • v.9 no.1
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    • pp.67-71
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    • 2010
  • Head up display’s cooling system is auto-diagnosed resulting from the external environment. The quantity of heat depending on this Head up display’s cooling system layout determines the speed of FAN for system cooling. In other words, a system’s heat quantity is planned through the air density depending on altitude, the amount of wind in air depending on FAN control condition, and the algorithm that is proportional to delta temperature. To detect the altitude, we use the criteria of delta T, which is determined by the subtracted value of LED junction temperature, and atmospheric temperature that is recorded on the Head up display system. Depending on the classification of delta T value, the altitude section is determined. While we can use GPS as the tool to detect the altitude, we should predict the change of the air density as the altitude alters, and should not just measure the altitude. And the value of delta T is used as the criterion of detecting the altitude for increasing the cooling efficiency of the car’s inner Head up display system with reflecting the speed of the FAN dependent upon the air density. In our theory, altitude is depending on the value of delta T and stabilizing or maintaining the system’s temperature by changing FAN’s rpm depending on determined value of altitude.

Effects of Roll-to-Roll Sputtering Conditions on the Properties of Flexible TiO2 Films

  • Park, Sang-Shik
    • Journal of the Korean Ceramic Society
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    • v.51 no.3
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    • pp.190-196
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    • 2014
  • Flexible $TiO_2$ films were deposited as dielectric materials for high-energy-density capacitors on polyethylene terephthalate (PET) substrates using a roll-to-roll sputtering method. Both the growth behavior and electrical properties of the flexible $TiO_2$ films were dependent on the sputtering pressure and $O_2$/Ar gas ratio during the sputtering process. All $TiO_2$ films had an amorphous structure regardless of the sputtering conditions due to the low substrate temperature. Microstructural characteristics such as the surface morphology and roughness of the films degraded with an increase in the sputtering pressure and $O_2$ gas concentration. The $TiO_2$ films deposited at a low pressure showed better electrical properties than those of films deposited at a high pressure. The $TiO_2$ films prepared at 10 mTorr exhibited a dielectric constant of approximately 90 at 1 kHz and a leakage current density of $5{\sim}6{\times}10^{-7}A/cm^2$ at 3 MV/cm.

An Investigation of Elementary School Teachers학 Conceptions on Buoyancy (부력 개념에 관한 초등학교 교사들의 이해도 조사)

  • 이형철;이순자
    • Journal of Korean Elementary Science Education
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    • v.19 no.1
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    • pp.145-156
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    • 2000
  • Elementary school teachers' understandings about buoyancy were investigated through the questionnaire method. The questionnaire was composed of 4 questions on hydraulic pressure and 8 questions on buoyancy. The questions on buoyancy asked about the correlation of buoyancy with following basic concepts, density of liquid, volume of submerged object and so forth. 295 teachers on the 22 elementary schools in Busan, Yangsan and Gimhae were selected through random sampling method. The results of this study were summarized as follows: On the correlation of the magnitude and direction of hydraulic pressure with the depth of water, a large portion of the respondents had a scientific conception. But on the correlation of hydraulic pressure with density, the relatively small portion of them appeared to have a scientific conception. The respondents, on the whole, had a scientific conception about the correlation of buoyancy with density of liquid. But they seemed to have naive conceptions about the correlation of buoyancy with the volume of a submerged object and with the depth of water, the amount of water in container and the reduced amount of water by the object from container. We found that the respondents were context dependent and tended to search for solutions for the questions of buoyancy using the concept of pressure in the water. From above results, we suggested that in the would-be revised elementary science text book, the contents of pressure in the water should be introduced after the concept of weight in the water was gained.

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Stress Distribution of Indium-tin-oxide (ITO) Film on Flexible Substrate by Bending process (Flexible 기판 위의 Bending 처리에 따른 ITO 필름의 Stress 분포 특성)

  • Park, Jun-Back;Hwang, Jeoung-Yeon;Seo, Dae-Shik;Park, Sung-Kyu;Moon, Dae-Gyu;Han, Jeong-In
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.181-184
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    • 2003
  • In this paper, we investigated the position-dependent stress distribution of indium-tin-oxide (ITO) film on Polycarbonate (PC) substrate by external bending force. It was found that there are the maximum crack density at the center position and decreasing crack density as goes to the edge. In accordance with crack distribution, it was observed that the change of electrical resistivity of ITO islands is maximum at the center and decrease as goes to the edge. From the result that crack density is increasing at same island position as face-plate distance (L) decreases, it is evident that the more stress is imposed on same island position as L decreases.

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CHARACTERISITCS OF CHLORINE IND DUCTIVELY COUPLED PLASMAS AND THEIR SILICON ETCH PROPERTIES

  • Lee, Young-Jun;Kim, Hyeon-Soo;Yeom, Geun-Young;Oho, Kyung-Hee
    • Journal of the Korean institute of surface engineering
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    • v.29 no.6
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    • pp.816-823
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    • 1996
  • Chlorine containing high density plasmas are widely used to etch various materials in the microelectronic device fabrication. In this study, the characteristics of inductively coupled $Cl_2(O_2/N_2$) plasmas and their effects on the formation of silicon etching have been investigated using a Langmuir probe, quadrupole mass spectrometry(QMS), X-ray photoelectron spectroscopy(XPS), and Scanning Electron Microscopy(SEM). The addition of oxygen for chlorine plasmas reduced ion current densities and chlorine radical densities compared to the nitrogen addition by the recombination of oxygen with chlorine. Also, when silicon is etched in $Cl_2/O_2$ plasmas, etch products recombined with oxygen such as $SiCl_xO_y$ emerged. However, when nitrogen is added to chlorine, etch products recombined with nitrogen or Si-N bondings on the etched silicon surface were not found. All the silicon etch characteristics were dependent on the plasma conditions such as ion density, radical density, etc. As a result sub micron vertical silicon trench etch profiles could be effectively formed using optimized etch conditions for $Cl_2/O_2\; and \;Cl_2/N_2$ gas combinations.

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