Journal of the Korean institute of surface engineering (한국표면공학회지)
- Volume 29 Issue 6
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- Pages.816-823
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- 1996
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- 1225-8024(pISSN)
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- 2288-8403(eISSN)
CHARACTERISITCS OF CHLORINE IND DUCTIVELY COUPLED PLASMAS AND THEIR SILICON ETCH PROPERTIES
- Lee, Young-Jun (Department of Materials Engineering, Sung Kyun Kwan University) ;
- Kim, Hyeon-Soo (Department of Materials Engineering, Sung Kyun Kwan University) ;
- Yeom, Geun-Young (Department of Materials Engineering, Sung Kyun Kwan University) ;
- Oho, Kyung-Hee (National Institute of Technology and Quality)
- Published : 1996.12.01
Abstract
Chlorine containing high density plasmas are widely used to etch various materials in the microelectronic device fabrication. In this study, the characteristics of inductively coupled
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