• Journal of IKEEE
• /
• v.26 no.1
• /
• pp.50-55
• /
• 2022

SiC is a power semiconductor with a wide bandgap, high insulation failure strength, and thermal conductivity, but many deep-level defects. Defects that appear in SiC can be divided into two categories, defects that appear in physical properties and interface traps that appear at interfaces. In this paper, Z_1/2 trap concentration 0 ~ 9×10¹⁴ cm^-3 reported at room temperature (300 K) is applied to SiC substrates and epi layer to investigate turn-on characteristics. As the trap concentration increased, the current density, Shockley-read-Hall (SRH), and Auger recombination decreased, and Ron increased by about 550% from 0.004 to 0.022 mohm.

• Macromolecular Research
• /
• v.10 no.2
• /
• pp.75-79
• /
• 2002

Organic materials have considerable attention as active semiconductors for device applications such as thin-film transistors (TFTs) and diodes. Pentacene is a p-type organic semiconducting material investigated for TFTs. In this paper, we reported the morphological and electrical characteristics of pentacene TFT films. The pentacene transistors showed the mobility of 0.8 $\textrm{cm}^2$/Vs and the grains larger than 1 ${\mu}{\textrm}{m}$. Deep-level transient spectroscopy (DLTS) measurements were carried out on metal/insulator/organic semiconductor structure devices that had a depletion region at the insulator/organic-semiconductor interface. The duration of the capacitance transient in DLTS signals was several ten of seconds in the pentacene, which was longer than that of inorganic semiconductors such as Si. Based on the DLTS characteristics, the energy levels of hole and electron traps for the pentacene films were approximately 0.24, 1.08, and 0.31 eV above Ev, and 0.69 eV below Ec.

• Transactions on Electrical and Electronic Materials
• /
• v.15 no.1
• /
• pp.16-19
• /
• 2014

Charge trapping nonvolatile memory capacitors with $ZrO_2$ as charge trapping layer were fabricated, and the effects of post annealing atmosphere ($NH_3$ and $N_2$) on their memory storage characteristics were investigated. It was found that the memory windows were improved, after annealing treatment. The memory capacitor after $NH_3$ annealing treatment exhibited the best electrical characteristics, with a 6.8 V memory window, a lower charge loss ~22.3% up to ten years, even at $150^{\circ}C$, and excellent endurance (1.5% memory window degradation). The results are attributed to deep level bulk charge traps, induced by using $NH_3$ annealing.

• Journal of IKEEE
• /
• v.27 no.3
• /
• pp.288-295
• /
• 2023

In this work, we investigated the role of oxygen annealing on the performance of Metal-Semiconductor-Metal (MSM) UV photodetector (PD) fabricated by radio frequency (RF)-sputtered Ga₂O₃ films on SiC substrates. Oxygen-nnealed Ga₂O₃ films displayed a notable increase in photocurrent and a faster decay time, indicating a decrease in persistent photoconductivity. This improvement is attributed to the reduction of oxygen vacancies and variation of defects by oxygen post-annealing. Our findings provide valuable insights into enhancing PD performance through oxygen annealing.

• Proceedings of the IEEK Conference
• /
• 2001.06b
• /
• pp.29-32
• /
• 2001

In this paper, the thermal oxidation behaviors and the electrical characteristics of the thermal oxide grown on SiC are discussed. For these studies the oxide layers with various thickness were on SiC in wet $O_2$ or dry $O_2$ at l15$0^{\circ}C$ and the MOS capacitors using the 350$\AA$ gate oxide grown in wet $O_2$ were fabricated and electrically characterized. It was found from the experimental results that the oxidation rate of SiC with the Si-face and with the carbon-face were about 10% and 50% of oxidation rate of Si. The C-V measurement results of the SiC oxide showed abnormal hysterisis properties which had ever been not observed for the Si oxide. And the hysterisis behavior was seen more significant when initial bias voltage was more negative or more positive. The hysterisis property of the SiC oxide was believed to be due the substantial amount of the deep level traps to exist at the interface between the oxide and the SiC substrate. The leakage of the SiC oxide was found to be one order larger than the Si oxide, but the breakdown strength was almost equal to that of the Si oxide.

• Journal of the Semiconductor & Display Technology
• /
• v.10 no.1
• /
• pp.63-73
• /
• 2011

Metamorphic HEMTs (MHEMTs) have emerged as excellent challenges for the design and fabrication of high-speed HEMTs for millimeter-wave applications. Some of improvements result from improved mobility and larger conduction band discontinuity in the channel, leading to more efficient modulation doping, better confinement, and better device performance compared with conventional pseudomorphic HEMTs (PHEMTs). For the optimized device design and development, we have performed the calibration on the DC characteristics of our fabricated 0.1 ${\mu}m$ ${\Gamma}$-gate MHEMT device having the modulation-doped $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}$As heterostructure on the GaAs wafer using the hydrodynamic transport model of a commercial 2D ISE-DESSIS device simulator. The well-calibrated device simulation shows very good agreement with the DC characteristic of the 0.1 ${\mu}m$ ${\Gamma}$-gate MHEMT device. We expect that our calibration result can help design over-100-GHz MHEMT devices for better device performance.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.48 no.11
• /
• pp.1-8
• /
• 2011

One of the most important parameters that limit maximum output power of transistor is breakdown. InAlAs/InGaAs/GaAs Metamorphic HEMTs (MHEMTs) have some advantages, especially for cost, compared with InP-based ones. However, GaAs-based MHEMTs and InP-based HEMTs are limited by lower breakdown voltage for output power even though they have good microwave and millimeter-wave frequency performance with lower minimum noise figure. In this paper, InAlAs/$In_xGa_{1-x}As$/GaAs MHEMTs are simulated and analyzed for breakdown. The parameters affecting breakdown are investigated in the fabricated 0.1-${\mu}m$ ${\Gamma}$-gate MHEMT device having the modulation-doped $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As$ heterostructure on the GaAs wafer using the hydrodynamic transport model of a 2D commercial device simulator. The impact ionization and gate field effect in the fabricated device including deep-level traps are analyzed for breakdown. In addition, Indium mole-fraction-dependent impact ionization rates are proposed empirically for $In_{0.52}Al_{0.48}As/In_xGa_{1-x}As$/GaAs MHEMTs.

• The Korean Journal of Petroleum Geology
• /
• v.4 no.1_2 s.5
• /
• pp.27-39
• /
• 1996

In the Cretaceous, the Gulf Coast Basin evolved as a marginal sag basin. Thick clastic and carbonate sequences cover the disturbed and diapirically deformed salt layer. In the Cretaceous the salinities of the Gulf Coast Basin probably matched the Holocene Persian Gulf, as is evidenced by the widespread development of supratidal anhydrite. The major Lower Cretaceous reservoir formations are the Cotton Valley, Hosston, Travis Peak siliciclastics, and Sligo, Trinity (Pine Island, Pearsall, Glen Rose), Edwards, Georgetown/Buda carbonates. Source rocks are down-dip offshore marine shales and marls, and seals are either up-dip shales, dense limestones, or evaporites. During this period, the entire Gulf Basin was a shallow sea which to the end of Cretaceous had been rimmed to the southwest by shallow marine carbonates while fine-grained terrigengus clastics were deposited on the northern and western margins of the basin. The main Upper Cretaceous reservoir groups of the Gulf Coast, which were deposited in the period of a major sea level .rise with the resulting deep water conditions, are Woodbinefruscaloosa sands, Austin chalk and carbonates, Taylor and Navarro sandstones. Source rocks are down-dip offshore shales and seals are up-dip shales. Major trap types of the Lower and Upper Cretaceous include salt-related anticlines from low relief pillows to complex salt diapirs. Growth fault structures with rollover anticlines on downthrown fault blocks are significant Gulf Coast traps. Permeability barriers, up-dip pinch-out sand bodies, and unconformity truncations also play a key role in oil exploration from the Cretaceous Gulf Coast reservoirs. The sedimentary sequences of the major Cretaceous reseuoir rocks are a good match to the regressional phases on the global sea level cuwe, suggesting that the Cretaceous Gulf Coast sedimentary stratigraphy relatively well reflects a response to eustatic sea level change throughout its history. Thus, of the three main factors controlling sedimentation (tectonic subsidence, sediment input, and eustatic sea level change) in the Gulf Coast Basin, sea-level ranks first in the period.