Acknowledgement
This work was supported by the Korea Institute for Advancement of Technology (KIAT) (P0012451), the National Research Foundation (NRF) funded by the Korea government(MSIT)(2021R1F1A1057620), and a research grant from Kwangwoon university in 2023.
References
- Baliga, B. J., "Fundamentals of power semiconductor devices," Springer Science & Business Media. 2010. DOI: 10.1007/978-0-387-47314-7
- S. J. Peatron, "A review of Ga2O3 materials, processing, and devices," Applied physics Reviews, Vol..5, pp.011301, 2018. DOI: 10.1063/1.5006941
- Zhang, Hao, et al. "Structural and optical properties of Nb-doped β-Ga2O3 thin films deposited by RF magnetron sputtering," Vacuum 146, pp.93-96. 2017. DOI: 10.1016/j.vacuum.2017.09.033
- Huang, Lu, et al. "Comparison study of β-Ga2O3 photodetectors grown on sapphire at different oxygen pressures," IEEE Photonics Journal, vol.9, no.4, pp.1-8, 2017. DOI: 10.1109/JPHOT.2017.2731625
- Lee, Young-Jae, et al. "Effect of Oxygen Annealing on the Characteristics of Isotype Ga2O3/4H-SiC Heterojunction Diodes," Journal of Nanoelectronics and Optoelectronics, vol.15. no.5, pp.561-565, 2020. DOI: 10.1166/jno.2020.2826.
- Zhang, Z., et al. "Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy," Applied Physics Letters, vol.108, no.5, 2016. DOI: 10.1063/1.4941429
- Farzana, Esmat, et al. "Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy," Journal of Applied Physics, vol.123, no.16, 2018. DOI: 10.1063/1.5010608
- Farzana, Esmat, et al. "Impact of deep level defects induced by high energy neutron radiation in β-Ga2O3." Apl Materials, vol.7, no.2,
- Shen, Zhenghao, et al. "The effect of oxygen annealing on characteristics of β-Ga2O3 solar-blind photodetectors on SiC substrate by ion-cutting process," Journal of Alloys and Compounds 889, pp.161743, 2021. DOI: 10.1063/1.5054606
- Makula, Patrycja, Michal Pacia, and Wojciech Macyk. "How to correctly determine the band gap energy of modified semiconductor photocatalysts based on UV-Vis spectra," The journal of physical chemistry letters vol.9, no.23, pp.6814-6817, 2018. DOI: 10.1021/acs.jpclett.8b02892
- Gan, Kai-Jhih, et al. "Highly durable and flexible gallium-based oxide conductive-bridging random access memory," Scientific reports, vol.9, no.1, 14141, 2019. DOI: 10.1038/s41598-019-50816-7.
- Chu, Shao-Yu, et al. "Investigation of Ga2O3-based deep ultraviolet photodetectors using plasma-enhanced atomic layer deposition system," Sensors, vol.20, no.21, 6159, 2020. DOI: 10.3390/s20216159
- Qin, Yuan, et al. "Review of deep ultraviolet photodetector based on gallium oxide," Chinese Physics B, vol.28, no.1, pp.018501, 2019. DOI: 10.1088/1674-1056/28/1/018501
- Zhang, Meng, et al. "High-performance photodiode-type photodetectors based on polycrystalline formamidinium lead iodide perovskite thin films," Scientific reports, vol.8, no.1, 11157, 2018. DOI: 10.1038/s41598-018-29147-6
- Liu, Zeng, et al. "Synergetic Effect of Photoconductive Gain and Persistent Photocurrent in a High-Photo-response Ga2O3 Deep-Ultraviolet Photodetector," IEEE Transactions on Electron Devices, vol.69, no.10, pp.5595-5602, 2022. https://doi.org/10.1109/TED.2022.3195473
- Lang, D. V. "Deep-level transient spectroscopy: A new method to characterize traps in semiconductors," Journal of applied physics, vol.45, no.7, pp.3023-3032, 1974. DOI: 10.1063/1.1663719
- Feng, Zhaoqing, et al. "Influence of annealing atmosphere on the performance of a β-Ga 2 O 3 thin film and photodetector," Optical Materials Express, vol.8, no.8, pp.2229-2237 2018. DOI: 10.1364/OME.8.002229