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Myung-Sik Son, Bok-Hyung Lee, Mi-Ra Kim, Sam- Dong Kim, and Jin-Koo Rhee, "Simulation of the DC and Millimeter-wave Characteristics of 0.1-um Offset T-shaped Gate / / GaAs MHEMTs with Various Channels,"J. Korean Phys. Soc., vol. 44, no.2, pp. 408-417, Feb. 2004.
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Pallab Bhattacharya, Properties of Lattice-Matched and Strained Indium Gallium Arsenide, INSPEC, pp. 84-218, 1993.
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Sadao Adachi, Physical Properties of III-V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP, Wiley Interscience, pp. 75-262, 1992.
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Frank Schwierz, Juin J. Liou, Modern Microwave Transistors: Theory, Design, and Performance, Wiley Interscience, pp. 19-291, 2003.
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T. Suemitsu, T. Enoki, N. Sano, M. Tomizawa, Y. Ishii, "An Analysis of the Kink Phenomena in InAlAs/InGaAs HEMT's Using Two-Dimensional Device Simulation," IEEE Trans. Electron Devices, vol. 45, no. 12, pp. 2390-2399, Dec. 1998.
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G. Meneghesso, and E. Zanoni, "Failure modes and mechanisms of InP-based and metamorphic high electron mobility transistors," Microelectronics Reliability, vol. 42, pp. 685-708, 2002.
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Bok-Hyung Lee, Dong-Hoon Shin, Sam-Dong Kim and Jin-Koo Rhee, "High Maximum Frequency of Oscillation of 0.1 m Off-set -Shaped gate InGaAs/InAlAs/GaAs metamorphic HEMTs," J. Korean Phys. Soc., vol. 43 no. 3 pp. 427-430, Sep. 2003.
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8 |
ISE-DESSIS manual, pp. 12-288, Ver. 9.5
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9 |
XTEM data taken from MINT research center, Dong-guk University, Korea
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10 |
T. Suemitsu, T. Enoki, and Y. Ishii, "Body contacts in InP-based InAlAs/InGaAs HEMTs and their effects on breakdown voltage and kink suppression," Electronics Letters, vol. 31, no. 9, pp. 758-759, April 1995.
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B. Brar, and H. Kroemer, "Influence of impact ionization on the Drain Conductance in InAs-AlSb Quantum Well Heterostructure Field-Effect Transistors," IEEE Trans. Electron Device Lett., vol. 16, no. 12, pp. 548-550, Dec. 1995.
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