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Calibration Study on the DC Characteristics of GaAs-based $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As$ Heterostructure Metamorphic HEMTs  

Son, Myung-Sik (Department of Electronic Engineering, Sunchon National University)
Publication Information
Journal of the Semiconductor & Display Technology / v.10, no.1, 2011 , pp. 63-73 More about this Journal
Abstract
Metamorphic HEMTs (MHEMTs) have emerged as excellent challenges for the design and fabrication of high-speed HEMTs for millimeter-wave applications. Some of improvements result from improved mobility and larger conduction band discontinuity in the channel, leading to more efficient modulation doping, better confinement, and better device performance compared with conventional pseudomorphic HEMTs (PHEMTs). For the optimized device design and development, we have performed the calibration on the DC characteristics of our fabricated 0.1 ${\mu}m$ ${\Gamma}$-gate MHEMT device having the modulation-doped $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}$As heterostructure on the GaAs wafer using the hydrodynamic transport model of a commercial 2D ISE-DESSIS device simulator. The well-calibrated device simulation shows very good agreement with the DC characteristic of the 0.1 ${\mu}m$ ${\Gamma}$-gate MHEMT device. We expect that our calibration result can help design over-100-GHz MHEMT devices for better device performance.
Keywords
Millimeter wave; HEMT; Metamorphic HEMT (MHEMT); Device simulation; Hydrodynamic transport simulation; Deep-level traps; Calibration;
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Times Cited By KSCI : 2  (Citation Analysis)
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