References
- Bhatnagar. M, Baliga. B. J, "Comparison of 6H-SiC, 3C-SiC, and Si for power devices," IEEE Transactions on electron devices, vol.40, no.3, pp.645-655. 1993. DOI: 10.1109/16.199372
- Matsunami. H, "Current SiC technology for power electronic devices beyond Si," Microelectronic engineering, vol.83, no.1, pp.2-4, 2006. DOI: 10.1016/j.mee.2005.10.012
- Evans. T, et al, "Development of SiC power devices and modules for automotive motor drive use," 2013 IEEE International Meetingf for Future of Electron Devices, pp.116-117, 2013. DOI: 10.1109/IMFEDK.2013.6602266
- She. Xu, et al, "Review of Silicon Carbide Power Devices and Their Applications," IEEE Transactions on Industrial Electronics, vol.64, no.10, pp.8193-8205, 2017. DOI: 10.1109/TIE.2017.2652401
- Magnusson. B, "Optical characterization of deep level defects in SiC". Materials Science Forum, vol.483, pp.341-346, 2005. DOI: 10.4028/www.scientific.net/MSF.483-485.341
- Castaldini. A, "Deep levels by proton and electron irradiation in 4H-SiC," journal of Applied Physics, vol.98, no.5, 053706, 2005. DOI: 10.1063/1.2014941
- Hemmingsson. C, "Deep level defects in electron-irradiated 4H SiC epitaxial layers," Journal of Applied Physics, vol.81, no.9, pp. 6155-6159, 1997. DOI: 10.1063/1.364397
- Pintilie. L, "Formation of the Z1,2 deep-lavel defects in 4H-SiC epitaxial layers: Evidence for nitrogen participation," Applied physics letters, vol.81, no.25, pp.4841-4843, 2002. DOI: 10.1063/1.1529314
- Kawahara. K, "Investigation on origin of Z1/2 center in SiC by deep level transient spectroscopy and electron paramagnetic resonance," Appplied Physics Letters, vol.102, no.11, pp.102106, 2013. DOI: 10.1063/1.4796141
- Dalibor. T, "Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy", Physica status solidi (a), vol. 162, no.1, pp.199-225, 1997. DOI: 10.1002/1521-396X (199707)162:1<199::AID-PSSA199>3.0.CO;2-0
- Danno. K, "Deep level transient spectroscopy on as-grown and electron-irradiated p-type 4H-SiC epilayers", Journal of applied physics, vol.101, no.10, pp.103704, 2007. DOI: 10.1063/1.2730569
- Pezzimenti. F, "Study and Assessment of Defect and Trap Effects on the Current Capabilities of a 4H-SiC-based Power MOSFET," Electronics, vol.10, no.6, pp.735, 2021. DOI: 10.3390/electronics10060735
- Sentaurus Device User, Version. L, Synopsys TCAD Sentaurus, San Jose, 2016.
- Lophitis. N, TCAD device modelling and simulation of wide bandgap power semiconductors, IntechOpen, 2018.
- Klein. P. B, et al, "Recombination processes controlling the carrier lifetime in n-4H-SiC epilayers with low Z1/2 concentrations," Journal of Applied Physics, vol. 108, no.3, pp.033713, 2010. DOI: 10.1063/1.3466745